Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 421/999
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Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Diodes Incorporated |
MOSFET N-CH 60V 0.45A TO92-3 |
8.478 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 450mA (Ta) | 10V | 2Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 75pF @ 18V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 16A 8-SOIC |
3.636 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 9mOhm @ 16A, 10V | 2V @ 250µA | 43.7nC @ 10V | ±20V | 2096pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 1.9A SOT363 |
3.186 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 1.9A (Ta), 2.37A (Tc) | 2.5V, 4.5V | 238mOhm @ 1.9A, 4.5V | 1.3V @ 250µA | 2.7nC @ 4.5V | ±12V | 100pF @ 15V | - | 1.32W (Ta), 2.28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
MOSFET N-CH 30V 2.9A SOT23-3 |
4.590 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 2.9A (Ta) | 4.5V, 10V | 50mOhm @ 3.4A, 10V | 800mV @ 250µA (Min) | 7nC @ 10V | ±20V | 215pF @ 15V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 12A 8SO |
2.268 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 20mOhm @ 8.3A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 490pF @ 15V | - | 2.4W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 5A TO252 |
8.514 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.6Ohm @ 2.5A, 10V | 4.5V @ 250µA | 14nC @ 10V | ±30V | 670pF @ 25V | - | 104W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET NCH 60V 55A POWERDI |
7.938 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 55A (Tc) | 4.5V, 10V | 23mOhm @ 12A, 10V | 3V @ 250µA | 19.7nC @ 10V | ±20V | 1016pF @ 30V | - | 1.6W (Ta), 53W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET NCH 60V 25A TO252 |
2.538 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Tc) | 4.5V, 10V | 50mOhm @ 6A, 10V | 3V @ 250µA | 8.8nC @ 10V | ±20V | 492pF @ 25V | - | 2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
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Diodes Incorporated |
MOSFET N-CH 60V 45A POWERDI3333 |
3.222 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Tc) | 4.5V, 10V | 9.5mOhm @ 13.5A, 10V | 3V @ 250µA | 33.5nC @ 10V | ±16V | 1925pF @ 30V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 30V 76A POWERDI3333 |
2.610 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 76A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.4V @ 250µA | 36nC @ 10V | ±20V | 1667pF @ 15V | - | 1.98W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 (Type UX) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 30V 76A POWERDI3333 |
7.092 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 76A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.4V @ 250µA | 36nC @ 10V | ±20V | 1667pF @ 15V | - | 1.98W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 (Type UX) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 30V 11A 8WDFN |
8.298 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 75A (Tc) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | 2.2V @ 250µA | 35.5nC @ 10V | ±20V | 2540pF @ 15V | - | 860mW (Ta), 43.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 40V 13A 37A 5DFN |
3.294 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 13A (Ta), 37A (Tc) | 4.5V, 10V | 10.3mOhm @ 20A, 10V | 2V @ 250µA | 7.3nC @ 10V | ±20V | 570pF @ 25V | - | 3.5W (Ta), 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 46A TO251A |
2.502 |
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Diodes Incorporated |
MOSFET N-CH 300V .21A SOT-89 |
1.776 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 210mA (Ta) | 4.5V, 10V | 14Ohm @ 300mA, 10V | 3V @ 250µA | 4nC @ 10V | ±20V | 96pF @ 25V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
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Infineon Technologies |
MOSFET N-CH 60V 2.9A SOT223 |
7.470 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 2.9A (Tj) | 10V | 120mOhm @ 2.9A, 10V | 4V @ 20µA | 9.3nC @ 7V | ±20V | 340pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 60V 18A POWERDI3333 |
8.046 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 50mOhm @ 4.5A, 10V | 3V @ 250µA | 25nC @ 10V | ±20V | 1480pF @ 30V | - | 2.4W | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 60V 18A POWERDI3333 |
6.498 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 50mOhm @ 4.5A, 10V | 3V @ 250µA | 25nC @ 10V | ±20V | 1480pF @ 30V | - | 2.4W | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 12V 19A POWERDI3333 |
2.448 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 19A (Tc) | 2.5V, 4.5V | 11.7mOhm @ 12A, 4.5V | 1.2V @ 250µA | 9.5nC @ 6V | -6V | 913pF @ 6V | - | 2.16W | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 12V 19A POWERDI3333 |
3.150 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 19A (Tc) | 2.5V, 4.5V | 11.7mOhm @ 12A, 4.5V | 1.2V @ 250µA | 9.5nC @ 6V | -6V | 913pF @ 6V | - | 2.16W | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET NCH 700V 5.4A TO251 |
3.490 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 700V | 5.4A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | 225pF @ 100V | Super Junction | 53W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO251 | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 50A U8FL |
6.084 |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V POWERDI33 |
3.508 |
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Infineon Technologies |
LV POWER MOS |
4.986 |
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Diodes Incorporated |
MOSFET BVDSS: 8V-24V X2-DSN1515- |
3.294 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 15A |
4.284 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 70A (Tc) | 10V, 20V | 6.7mOhm @ 20A, 20V | 3.5V @ 250µA | 65nC @ 10V | ±25V | 2760pF @ 15V | - | 2.5W (Ta), 90W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
8.334 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 87A (Ta), 49A (Tc) | 4.5V, 10V | 6mOhm @ 24.5A, 10V | 2.4V @ 200µA | 30nC @ 10V | ±20V | 2700pF @ 20V | - | 1.8W (Ta), 81W (Tc) | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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ON Semiconductor |
T8 60V LOW COSS |
3.834 |
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Diodes Incorporated |
MOSFET N-CH 30V 12A |
8.010 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 10mOhm @ 9A, 10V | 3V @ 250µA | 14nC @ 10V | ±20V | 886pF @ 15V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 30V 40A DPAK |
2.250 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.6A (Ta), 40A (Tc) | 4.5V, 11.5V | 13mOhm @ 30A, 10V | 2.5V @ 250µA | 10nC @ 4.5V | ±20V | 940pF @ 12V | - | 1.27W (Ta), 35.3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |