Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 270/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Microchip Technology |
MOSFET P-CH 60V 0.25A TO92-3 |
13.188 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 250mA (Tj) | 5V, 10V | 8Ohm @ 500mA, 10V | 3.5V @ 1mA | - | ±20V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 30V 184A TO220 |
15.600 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 130A (Tc) | 4.5V, 10V | 2.4mOhm @ 68A, 10V | 2.2V @ 100µA | 60nC @ 4.5V | ±20V | 5050pF @ 15V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 5A I-PAK |
10.260 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 5A (Tc) | 10V | 600mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | ±20V | 300pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET P-CH 200V 2.8A TO-220 |
21.588 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 200V | 2.8A (Tc) | 10V | 2.7Ohm @ 1.4A, 10V | 5V @ 250µA | 8nC @ 10V | ±30V | 250pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 30A TO-220 |
19.260 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 15mOhm @ 15A, 10V | 4V @ 200µA | 16nC @ 10V | ±20V | 1050pF @ 30V | - | 25W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 200V 5.2A TO-220AB |
7.656 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 5.2A (Tc) | 10V | 800mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Microchip Technology |
MOSFET N-CH 240V 0.19A TO92-3 |
6.948 |
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- | N-Channel | MOSFET (Metal Oxide) | 240V | 190mA (Tj) | 2.5V, 10V | 10Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 40V 0.45A TO92-3 |
6.972 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 450mA (Ta) | 3V, 10V | 1.8Ohm @ 1A, 10V | 1.6V @ 500µA | - | ±20V | 70pF @ 20V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Vishay Siliconix |
MOSFET N-CH 150V 42A TO252AA |
6.504 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 42A (Tc) | 10V | 44.7mOhm @ 8.3A, 10V | 4V @ 250µA | 16nC @ 10V | ±20V | 560pF @ 50V | - | 65.2W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V TO220-3 |
8.424 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.2A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 200µA | 15.3nC @ 10V | ±20V | 328pF @ 100V | Super Junction | 68W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 60V 6.7A TO-220AB |
20.148 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 1.7A 4-DIP |
7.308 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 1.7A (Ta) | 4V, 5V | 200mOhm @ 1A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Infineon Technologies |
MOSFET P-CH 100V 6.8A TO-220AB |
18.324 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | - | 480mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | - | 350pF @ 25V | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO-220-3 |
9.048 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5.5mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | 3200pF @ 15V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Microchip Technology |
MOSFET N-CH 100V 500MA TO92-3 |
8.190 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 500mA (Tj) | 3V, 10V | 1.5Ohm @ 750mA, 10V | 2V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 75V 75A D2PAK |
17.604 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 9.4mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3270pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 12.8A TO-220 |
16.740 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 12.8A (Tc) | 10V | 180mOhm @ 6.4A, 10V | 4V @ 250µA | 16nC @ 10V | ±25V | 450pF @ 25V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
8.628 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 10A | 10V | 450mOhm @ 2.3A, 10V | 3.5V @ 120µA | 13.1nC @ 400V | ±16V | 424pF @ 400V | - | 22.7W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET P-CH 100V 8A TO-220 |
19.776 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 8A (Tc) | 10V | 530mOhm @ 4A, 10V | 4V @ 250µA | 15nC @ 10V | ±30V | 470pF @ 25V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 20A TO-220 |
16.104 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 10V | 60mOhm @ 10A, 10V | 4V @ 250µA | 15nC @ 10V | ±25V | 590pF @ 25V | - | 53W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 2.5A TO-220AB |
8.832 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | 360pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 5.3A TO-220AB |
7.650 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5.3A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 5V @ 250µA | 20nC @ 10V | ±30V | 325pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 14A TO-220 |
6.216 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 110mOhm @ 7A, 10V | 4V @ 250µA | 36nC @ 10V | - | 790pF @ 25V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Microchip Technology |
MOSFET N-CH 20V 530MA TO92-3 |
14.076 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 530mA (Tj) | 2V, 5V | 1.3Ohm @ 500mA, 5V | 1V @ 1mA | - | ±20V | 200pF @ 20V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 80V 300MA TO92-3 |
18.636 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 300mA (Tj) | 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±30V | 50pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET N-CH 30V 54A TO-220AB |
13.872 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 54A (Tc) | 4.5V, 10V | 11.6mOhm @ 40A, 10V | 2.5V @ 250µA | 29nC @ 10V | ±20V | 1240pF @ 15V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 200V 9.5A TO-220F |
19.104 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9.5A (Tc) | 10V | 360mOhm @ 4.75A, 10V | 4V @ 250µA | 26nC @ 10V | ±30V | 510pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 50V 30A TO-220AB |
16.668 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 30A (Tc) | 10V | 40mOhm @ 15A, 10V | 4V @ 1mA | - | ±20V | 2000pF @ 25V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3 |
6.660 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 3.9mOhm @ 80A, 10V | 2V @ 45µA | 78nC @ 10V | ±20V | 6100pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 30V 90A TO-220 |
13.692 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 5V, 10V | 6.5mOhm @ 45A, 10V | 2.5V @ 250µA | 47nC @ 5V | ±20V | 2700pF @ 25V | - | 150W (Tc) | -65°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |