Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 268/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 4VSON |
2.394 |
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CoolMOS™ CFD7 | N-Channel | MOSFET (Metal Oxide) | 650V | 33A (Tc) | 10V | 75mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67nC @ 10V | ±20V | 2721pF @ 400V | - | 189W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 100V D2PAK-3 |
7.794 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 2mOhm @ 100A, 10V | 4.1V @ 270µA | 195nC @ 10V | ±20V | 840pF @ 50V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 4VSON |
5.652 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 39A (Tc) | 10V | 85mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | ±20V | 2180pF @ 400V | - | 154W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
6.678 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 48A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 67nC @ 10V | ±20V | 2895pF @ 400V | - | 164W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
80V 300A 1.4MOHM TOLL |
6.156 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 80V | 300A (DC) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.8V @ 230µA | 187nC @ 10V | ±20V | 13178pF @ 40V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 80V 300A PG-HSOG-8-1 |
2.088 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 300A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.8V @ 275µA | 231nC @ 10V | ±20V | 16250pF @ 40V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
MOSFET N-CH 200 D2PAK-3 |
2.232 |
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OptiMOS™ 3 | N-Channel | MOSFET (Metal Oxide) | 200V | 88A (Tc) | 10V | 11mOhm @ 88A, 10V | 4.2V @ 260µA | 76nC @ 10V | ±20V | 650pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 31A D2PAK |
4.932 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | 2800pF @ 100V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 4VSON |
2.034 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 41A (Tc) | 10V | 65mOhm @ 15.9A, 10V | 4V @ 800µA | 67nC @ 10V | ±20V | 2895pF @ 400V | - | 201W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET_(75V,120V( |
2.034 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 100V | 300A (Tc) | 6V, 10V | 1.5mOhm @ 100A, 10V | 3.8V @ 275µA | 216nC @ 10V | ±20V | 16011pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 650V 35A TO263-3 |
8.658 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | ±20V | 2850pF @ 400V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
5.076 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 33A (Tc) | 10V | 65mOhm @ 17.1A, 10V | 4.5V @ 200µA | 64nC @ 10V | ±20V | 3020pF @ 400V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 4VSON |
3.472 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 28A (Tc) | 10V | 70mOhm @ 8.5A, 10V | 4V @ 850µA | 64nC @ 10V | ±20V | 3020pF @ 100V | - | 169W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 650V 44A HSOF-8 |
8.982 |
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CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 650V | 44A (Tc) | 10V | 50mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | ±20V | 2670pF @ 400V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-2 | 8-PowerSFN |
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Infineon Technologies |
IC GAN FET 600V 23A 8HSOF |
2.700 |
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CoolGaN™ | N-Channel | GaNFET (Gallium Nitride) | 600V | 12.5A (Tc) | - | - | 1.6V @ 960µA | - | -10V | 157pF @ 400V | - | 55.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-3 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 600V 75A HSOF-8 |
6.426 |
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CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 600V | 75A (Tc) | 10V | 28mOhm @ 28.8A, 10V | 4V @ 1.44mA | 123nC @ 10V | ±20V | 4820pF @ 400V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-2 | 8-PowerSFN |
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Infineon Technologies |
IC GAN FET 600V 60A 8HSOF |
5.850 |
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CoolGaN™ | N-Channel | GaNFET (Gallium Nitride) | 600V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380pF @ 400V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-3 | 8-PowerSFN |
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Infineon Technologies |
IC GAN FET 600V 60A 20DSO |
3.582 |
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CoolGaN™ | N-Channel | GaNFET (Gallium Nitride) | 600V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380pF @ 400V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-20-85 | 20-PowerSOIC (0.433", 11.00mm Width) |
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Infineon Technologies |
IC GAN FET 600V 60A 20DSO |
8.280 |
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CoolGaN™ | N-Channel | GaNFET (Gallium Nitride) | 600V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380pF @ 400V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-20-87 | 20-PowerSOIC (0.433", 11.00mm Width) |
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STMicroelectronics |
MOSFET N-CH 950V 38A TO247 |
18.807 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 950V | 38A (Tc) | 10V | 130mOhm @ 19A, 10V | 5V @ 100µA | 93nC @ 10V | ±30V | 3300pF @ 100V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET P CH 60V 10A TO-220 |
16.512 |
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DeepGATE™, STripFET™ VI | P-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 160mOhm @ 5A, 10V | 4V @ 250µA | 6.4nC @ 10V | ±20V | 340pF @ 48V | - | 30W (Tc) | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 33V 80A TO-220 |
21.264 |
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MESH OVERLAY™ III | N-Channel | MOSFET (Metal Oxide) | 33V | 80A (Tc) | 10V | 11mOhm @ 40A, 10V | 4V @ 250µA | 50nC @ 10V | - | 1860pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 55A TO-220AB |
7.092 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 55A (Tc) | 4V, 10V | 26mOhm @ 29A, 10V | 2V @ 250µA | 140nC @ 5V | ±16V | 3700pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 500V 10A TO-220FP |
17.172 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 520mOhm @ 4.5A, 10V | 4.5V @ 100µA | 68nC @ 10V | ±30V | 1390pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 55V 104A TO-220AB |
14.640 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 104A (Tc) | 4V, 10V | 8mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | ±16V | 5000pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 1000V 0.1A TO-252AA |
8.820 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 100mA (Tc) | - | 110Ohm @ 50mA, 0V | - | - | ±20V | 120pF @ 25V | Depletion Mode | 1.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 650V 7A TO220FP |
17.472 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 15nC @ 10V | ±25V | 690pF @ 100V | - | 25W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET P-CH 60V 47A TO-220 |
15.900 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 47A (Tc) | 10V | 26mOhm @ 23.5A, 10V | 4V @ 250µA | 110nC @ 10V | ±25V | 3600pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Nexperia |
MOSFET N-CH 100V 120A TO220AB |
8.874 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4.3mOhm @ 25A, 10V | 4V @ 1mA | 170nC @ 10V | ±20V | 9900pF @ 50V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 950V 9A TO-220 |
19.836 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 950V | 9A (Tc) | 10V | 1.25Ohm @ 3A, 10V | 5V @ 100µA | 13nC @ 10V | ±30V | 450pF @ 100V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |