Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 266/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 250V 3.8A PQFN56 |
5.382 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 3.8A (Ta) | 10V | 100mOhm @ 5.7A, 10V | 5V @ 150µA | 56nC @ 10V | ±20V | 2150pF @ 50V | - | 3.6W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 4VSON |
6.858 |
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CoolMOS™ CFD7 | N-Channel | MOSFET (Metal Oxide) | 650V | 14A (Tc) | 10V | 185mOhm @ 6A, 10V | 4.5V @ 300µA | 28nC @ 10V | ±20V | 1199pF @ 400V | - | 85W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 75V 170A D2PAK |
4.788 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 170A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 7600pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK |
8.244 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 6V, 10V | 0.75mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | ±20V | 13975pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 650V 17.5A TO263 |
2.970 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 730µA | 68nC @ 10V | ±20V | 1850pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 90A TDSON-8 |
7.416 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 11.4A (Ta), 90A (Tc) | 4.5V, 10V | 10.5mOhm @ 50A, 10V | 2.4V @ 110µA | 53nC @ 10V | ±20V | 3900pF @ 50V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
TRENCH 40<-<100V |
4.662 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A | 6V, 10V | 1.2mOhm @ 50A, 10V | 3.3V @ 147µA | 143nC @ 10V | ±20V | 11000pF @ 30V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSON-8-3 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 250V DIRECTFET L8 |
3.526 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 375A (Tc) | 10V | 38mOhm @ 21A, 10V | 5V @ 250µA | 165nC @ 10V | ±30V | 6714pF @ 25V | - | 4.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK |
8.712 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 4340pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
HIGH POWER_NEW |
3.744 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 14A (Tc) | 10V | 195mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | ±20V | 996pF @ 400V | - | 97W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-2 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 75V 240A D2PAK |
6.282 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 240A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 428nC @ 10V | ±20V | 13970pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 24V 429A D2PAK-7 |
8.622 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 24V | 240A (Tc) | 10V | 1mOhm @ 160A, 10V | 4V @ 250µA | 252nC @ 10V | ±20V | 7700pF @ 19V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 150V 105A D2PAK-7 |
5.310 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 105A (Tc) | 10V | 11.8mOhm @ 63A, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 5320pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK-7 |
2.880 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 1.6mOhm @ 160A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 6930pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N CH 60V 240A D2PAK |
7.830 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 240A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.7V @ 250µA | 354nC @ 10V | ±20V | 12960pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 150V 9A WDSON-2 |
3.472 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 9A (Ta), 45A (Tc) | 8V, 10V | 16.5mOhm @ 30A, 10V | 4V @ 110µA | 35nC @ 10V | ±20V | 2800pF @ 75V | - | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 600V 23.8A TO263 |
8.982 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 23.8A (Tc) | 10V | 160mOhm @ 11.3A, 10V | 3.5V @ 750µA | 75nC @ 10V | ±20V | 1660pF @ 100V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 38A D2PAK |
4.644 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 38A (Tc) | 10V | 60mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 2780pF @ 25V | - | 3.1W (Ta), 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 165A 80V 120V 8HSOF |
7.668 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 165A (Tc) | 6V, 10V | 2.9mOhm @ 80A, 10V | 3.8V @ 108µA | 90nC @ 10V | ±20V | 6370pF @ 40V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 60V 240A D2PAK-7 |
5.094 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 240A (Tc) | 4.5V, 10V | 1.9mOhm @ 180A, 10V | 2.5V @ 250µA | 160nC @ 4.5V | ±16V | 11270pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 650V 16.4A 4VSON |
8.082 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 16.4A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 32nC @ 10V | ±20V | 1520pF @ 100V | - | 139W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 650V 17A HSOF-8 |
5.778 |
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CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 650V | 17A (Tc) | 10V | 150mOhm @ 5.3A, 10V | 4V @ 260µA | 23nC @ 10V | ±20V | 902pF @ 400V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-2 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 40V 160A TO263-7 |
3.258 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 2.9mOhm @ 60A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 5300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK |
2.214 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 290nC @ 10V | ±20V | 7960pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO263-3 |
6.678 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 4.7mOhm @ 80A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 5110pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
TRENCH_MOSFETS |
5.094 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 90A | 10V | 16.9mOhm @ 51A, 10V | 5V @ 250µA | 162nC @ 10V | ±20V | 6484pF @ 50V | - | 417W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
TRENCH >=100V |
8.694 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Ta), 100A (Tc) | 6V, 10V | 2.7mOhm @ 50A, 10V | 3.8V @ 146µA | 111nC @ 10V | ±20V | 8200pF @ 50V | - | 3W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSON-8-3 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 33A DIRECTFETL8 |
7.362 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 33A (Ta), 200A (Tc) | 10V | 1.5mOhm @ 120A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 12320pF @ 25V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 40V 375A |
6.768 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 375A (Tc) | 4.5V, 10V | 0.59mOhm @ 195A, 10V | 2.5V @ 250µA | 330nC @ 4.5V | ±20V | 20082pF @ 25V | - | 3.8W (Ta), 341W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
TRENCH >=100V |
6.822 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 52A | 10V | 22mOhm @ 52A, 10V | 4V @ 137µA | 43nC @ 10V | ±20V | 3680pF @ 100V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSON-8-3 | 8-PowerTDFN |