Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 223/999
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET N-CH 25V 35A DPAK |
3.436 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 25V | 35A (Tc) | 4.5V, 10V | 4mOhm @ 35A, 10V | 2.5V @ 250µA | 73nC @ 10V | ±20V | 3720pF @ 13V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 60V 15A DPAK |
5.490 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 15A (Tc) | 10V | 14mOhm @ 7.5A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 1065pF @ 30V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 150V 6.5A TO252 |
5.850 |
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AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 150V | 6.5A (Ta), 23A (Tc) | 4.5V, 10V | 54mOhm @ 5A, 10V | 2.7V @ 250µA | 20nC @ 10V | ±20V | 675pF @ 75V | - | 6.2W (Ta), 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V SO8FL |
7.254 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | - | 4.5V, 10V | 4.5mOhm @ 35A, 10V | 2V @ 250µA | 23nC @ 10V | ±20V | 1300pF @ 20V | - | 3.6W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 150V 19A TO252 |
2.034 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 3A (Ta), 19A (Tc) | 4.5V, 10V | 85mOhm @ 10A, 10V | 2.8V @ 250µA | 22nC @ 10V | ±20V | 1165pF @ 75V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 700V 3A TO252 |
7.704 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 3A (Tc) | 10V | 1.4Ohm @ 1.2A, 10V | 4V @ 250µA | 7.4nC @ 10V | ±30V | 317pF @ 100V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 30V 17A 8SON |
5.616 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta), 60A (Tc) | 4.5V, 10V | 6.2mOhm @ 15A, 10V | 1.9V @ 250µA | 12nC @ 4.5V | ±20V | 2050pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 14A 8-SOP ADV |
7.830 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Ta) | 6.5V, 10V | 14mOhm @ 7A, 10V | 4V @ 200µA | 16nC @ 10V | ±20V | 1300pF @ 30V | - | 1.6W (Ta), 32W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET NCH 40V 15.5A POWERDI |
6.300 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 15.5A (Ta), 100A (Tc) | 4.5V, 10V | 6.5mOhm @ 20A, 10V | 3V @ 250µA | 29.1nC @ 10V | ±20V | 1895pF @ 30V | - | 2.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CHA 60V 10.6A POWERDI |
3.888 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 10.6A (Ta), 87A (Tc) | 4.5V, 10V | 10mOhm @ 20A, 10V | 2V @ 250µA | 33.5nC @ 10V | ±16V | 1925pF @ 30V | - | 2.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 60V 100A LFPAK |
5.544 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 5V | 5.6mOhm @ 25A, 10V | 2.1V @ 1mA | 35nC @ 5V | ±10V | 5026pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Texas Instruments |
MOSFET N-CH 30V 87A 8SON |
2.754 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 87A (Tc) | 4.5V, 8V | 8.8mOhm @ 14A, 8V | 2V @ 250µA | 4.3nC @ 4.5V | ±10V | 695pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 100V 10A |
7.074 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Ta), 42A (Tc) | 6V, 10V | 13.5mOhm @ 20A, 10V | 3.5V @ 250µA | 33.3nC @ 10V | ±20V | 1871pF @ 50V | - | 2W (Ta), 35W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Nexperia |
MOSFET N-CH 40V 120A D2PAK |
19.416 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 2.3mOhm @ 25A, 10V | 2.8V @ 1mA | 199nC @ 10V | ±16V | 11334pF @ 25V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Panasonic Electronic Components |
MOSFET N-CH 30V 18A S08 |
24.096 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 4.2mOhm @ 5A, 10V | 2.5V @ 1mA | - | ±20V | 6000pF @ 10V | - | - | 150°C (TJ) | Surface Mount | SO8-F1-B | 8-SMD, Flat Lead |
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Panasonic Electronic Components |
MOSFET P CH 20V 4.4A PMCP |
3.544 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 4.4A (Ta) | 2V, 4.5V | 12.5mOhm @ 3.7A, 4.5V | 1.05V @ 1mA | - | ±8V | 3000pF @ 10V | - | - | 150°C (TJ) | Surface Mount | 3-PMCP | 3-SMD, Non-Standard |
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ON Semiconductor |
MOSFET N-CH 100V 19A DPAK |
8.676 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 19A (Tc) | 4.5V, 10V | 74mOhm @ 19A, 10V | 2.2V @ 250µA | 40nC @ 10V | ±20V | 1000pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 30V 9A SOP8 |
6.948 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4V, 10V | 16mOhm @ 9A, 10V | 2.5V @ 1mA | 15nC @ 5V | ±20V | 810pF @ 10V | - | 2W (Ta) | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 55A DPAK |
3.636 |
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PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 55A (Ta) | 4.5V, 10V | 10.5mOhm @ 12.5A, 10V | 3V @ 1mA | 29nC @ 10V | ±20V | 1200pF @ 15V | - | 60W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 100V 7.3A |
3.582 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 7.3A (Ta), 44A (Tc) | 4.5V, 10V | 16mOhm @ 20A, 10V | 3.5V @ 250µA | 33.3nC @ 10V | ±20V | 1871pF @ 50V | - | 1.3W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 60V 11.4A D2PAK |
15.384 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 11.4A (Tc) | 10V | 175mOhm @ 5.7A, 10V | 4V @ 250µA | 17nC @ 10V | ±25V | 550pF @ 25V | - | 3.13W (Ta), 53W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 500V 4.5A DPAK |
3.132 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.2Ohm @ 2.25A, 10V | 4V @ 250µA | 25nC @ 10V | ±30V | 700pF @ 25V | - | 2.5W (Ta), 61W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 50A SOP-8 ADV |
25.722 |
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U-MOSIV-H | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Ta) | 4.5V, 10V | 2.8mOhm @ 25A, 10V | 2.3V @ 1mA | 88nC @ 10V | ±20V | 7800pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET P-CHANNEL 60V 27A ATPAK |
8.010 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 27A (Ta) | 4V, 10V | 43mOhm @ 13A, 10V | 2.6V @ 1mA | 33.5nC @ 10V | ±20V | 1450pF @ 20V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | ATPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CHANNEL 40V 33A ATPAK |
8.568 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 33A (Ta) | 4.5V, 10V | 25mOhm @ 15A, 10V | 2.6V @ 1mA | 29nC @ 10V | ±20V | 1380pF @ 20V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | ATPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 800V 2.6A TO252-3 |
6.138 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 2.6A (Tc) | 10V | 2.25Ohm @ 1.3A, 10V | 4.5V @ 260µA | 14nC @ 10V | ±20V | 585pF @ 100V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 60V 100A |
5.688 |
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STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 5.4mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 1600pF @ 25V | - | 3W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (3.3x3.3) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET P-CH 200V 1.9A DPAK |
5.796 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 1.9A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 4V @ 250µA | 8.9nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 25V 60A POWERPAKSO-8 |
3.816 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 25V | 60A (Tc) | 4.5V, 10V | 1.2mOhm @ 15A, 10V | 2.2V @ 250µA | 83nC @ 10V | +16V, -12V | 4450pF @ 10V | - | 65.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CHANNEL 60V 4.6A 8SO |
4.356 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 4.6A (Tc) | 4.5V, 10V | 85mOhm @ 3.5A, 10V | 2.5V @ 250µA | 40nC @ 10V | ±20V | 1140pF @ 30V | - | 3.75W (Tc) | -55°C ~ 175°C (TA) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |