Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 221/999
Bild |
Teilenummer |
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Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET P-CH 30V 40A ATPAK |
7.128 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 18.5mOhm @ 20A, 10V | - | 34nC @ 10V | ±20V | 1490pF @ 10V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
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Vishay Siliconix |
MOSFET N-CH 40V 16A 1212-8 |
5.868 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 16A (Tc) | 4.5V, 10V | 9mOhm @ 16.4A, 10V | 2.5V @ 250µA | 39nC @ 10V | ±20V | 1855pF @ 25V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 16A 1212-8 |
2.880 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Tc) | 4.5V, 10V | 8.5mOhm @ 16.4A, 10V | 2.5V @ 250µA | 39nC @ 10V | ±20V | 1865pF @ 25V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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ON Semiconductor |
MOSFET N-CH 30V POWER56 |
4.464 |
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PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 26A (Ta), 49A (Tc) | 4.5V, 10V | 2.4mOhm @ 26A, 10V | 3V @ 1mA | 57nC @ 10V | ±20V | 3550pF @ 15V | - | 2.5W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 650V 2.3A POWERFLAT |
8.622 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 2.3A (Tc) | 10V | 1.8Ohm @ 1A, 10V | 4V @ 250µA | 5nC @ 10V | ±25V | 155pF @ 100V | - | 22W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (3.3x3.3) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 60V 18A POWERPAK1212 |
3.492 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 23mOhm @ 8.7A, 10V | 2.5V @ 250µA | 25nC @ 10V | ±20V | 1590pF @ 30V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Central Semiconductor Corp |
MOSFET P-CH 30V 11A 8SOIC |
4.536 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 20mOhm @ 11A, 10V | 3V @ 250µA | 80nC @ 10V | 20V | 3100pF @ 8V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 30V 12.7A 8SO |
7.956 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.8A (Ta) | 4.5V, 10V | 12.5mOhm @ 11.7A, 10V | 2.3V @ 250µA | 43nC @ 10V | ±12V | 1849pF @ 15V | Schottky Diode (Body) | 1.54W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 20V 8A 1212-8 |
2.718 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 8A (Tc) | 1.8V, 4.5V | 28mOhm @ 5A, 4.5V | 1.5V @ 250µA | 14nC @ 4.5V | ±8V | 490pF @ 10V | - | 18W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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ON Semiconductor |
MOSFET N-CH 30V 11.4A SO8FL |
6.426 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.8A (Ta) | 4.5V, 10V | 9mOhm @ 12A, 10V | 2.5V @ 250µA | 15nC @ 4.5V | ±20V | 1376pF @ 25V | - | 890mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET NCH 40V 95A TO252 |
2.178 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 95A (Tc) | 10V | 4.5mOhm @ 50A, 10V | 4V @ 250µA | 49.1nC @ 10V | ±20V | 3062pF @ 20V | - | 2.1W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
PMOS DPAK 40V 27 MOHM |
2.538 |
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Automotive, AEC-Q101, PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 40V | 32A (Tc) | 4.5V, 10V | 27mOhm @ 8.4A, 10V | 3V @ 250µA | 27nC @ 5V | ±20V | 2380pF @ 20V | - | 83W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 20A PPAK SO-8 |
8.532 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Tc) | 10V | 9.5mOhm @ 10A, 10V | 2.2V @ 250µA | 27nC @ 10V | ±20V | 985pF @ 15V | - | 3.9W (Ta), 29.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Texas Instruments |
MOSFET N-CH 25V 52A 8-SON |
5.004 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 14A (Ta), 52A (Tc) | 4.5V, 10V | 11mOhm @ 10A, 10V | 2.3V @ 250µA | 3.8nC @ 4.5V | +16V, -12V | 530pF @ 12.5V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CHANNEL 60V 50A 5DFN |
2.196 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 9.2mOhm @ 25A, 10V | 2V @ 35µA | 9.5nC @ 10V | ±20V | 880pF @ 25V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Texas Instruments |
30V N CH MOSFET |
5.076 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 123A (Tc) | 4.5V, 10V | 3.4mOhm @ 16A, 10V | 1.7V @ 250µA | 54nC @ 10V | ±20V | 3640pF @ 15V | - | 3.1W (Ta), 83W (Tc) | -55°C ~ 155°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 20V 20A POWERDI5060 |
5.526 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 20A (Ta), 100A (Tc) | 2.5V, 4.5V | 4.6mOhm @ 13.5A, 4.5V | 1.2V @ 250µA | 142nC @ 10V | ±12V | 5337pF @ 10V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 60V 32A POWERPAKSO-8 |
5.004 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 32A (Tc) | 4.5V, 10V | 17mOhm @ 7.1A, 10V | 2.5V @ 250µA | 44nC @ 10V | ±20V | 2086pF @ 30V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 40A 8TSON |
3.168 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 18A (Tc) | 10V | 13.3mOhm @ 9A, 10V | 4V @ 200µA | 18nC @ 10V | ±20V | 1600pF @ 40V | - | 700mW (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CHANNEL 40V 19A 8SOIC |
2.502 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 19A (Tc) | 4.5V, 10V | 8mOhm @ 10A, 10V | 2.5V @ 250µA | 51nC @ 10V | ±20V | 2406pF @ 20V | - | 6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
NCH 60V 8A POWER MOSFET |
5.706 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | 4V, 10V | 80mOhm @ 8A, 10V | 2.5V @ 1mA | 9.4nC @ 10V | ±20V | 380pF @ 10V | - | 15W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 600V 2A POWER MOSFET |
5.598 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 1.7A (Tc) | 10V | 3.4Ohm @ 500mA, 10V | 4V @ 1mA | 6.5nC @ 10V | ±20V | 65pF @ 25V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 100V 9A TP-FA DPAK |
17.988 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 9A (Ta) | 4V, 10V | 225mOhm @ 3A, 10V | 2.6V @ 1mA | 9.8nC @ 10V | ±20V | 490pF @ 20V | - | 1W (Ta), 19W (Tc) | 150°C (TJ) | Surface Mount | DPAK/TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 25V 60A 8-SON |
3.870 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 15A (Ta), 60A (Tc) | 4.5V, 10V | 8.2mOhm @ 17A, 10V | 2.3V @ 250µA | 5.6nC @ 4.5V | +16V, -12V | 800pF @ 12.5V | - | 2.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 31A I-PAK |
24.030 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 31A (Tc) | 10V | 39mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | ±20V | 1690pF @ 25V | - | 3W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Diodes Incorporated |
MOSFET NCH 40V 12.9A POWERDI |
4.644 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 12.9A (Ta), 100A (Tc) | 10V | 10mOhm @ 50A, 10V | 4V @ 250µA | 25.5nC @ 10V | ±20V | 1405pF @ 20V | - | 2.5W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 150V 14A DPAK |
8.712 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 2.8A (Ta), 14A (Tc) | 6V, 10V | 120mOhm @ 4A, 10V | 4V @ 250µA | 14.5nC @ 10V | ±20V | 770pF @ 25V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 27A DIRECTFET MT |
37.212 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 34A (Ta), 192A (Tc) | 4.5V, 10V | 1.5mOhm @ 32A, 10V | 2.35V @ 150µA | 77nC @ 4.5V | ±20V | 6140pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MT | DirectFET™ Isometric MT |
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STMicroelectronics |
MOSFET N-CH 30V 6A SOT23-6 |
4.284 |
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DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 30V | 6A (Tc) | 4.5V, 10V | 25mOhm @ 3A, 10V | 1V @ 250µA | 3.6nC @ 4.5V | ±20V | 283pF @ 24V | - | 1.6W (Tc) | 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 60V 24A DPAK |
3.834 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 24A (Ta) | 5V | 45mOhm @ 10A, 5V | 2V @ 250µA | 32nC @ 5V | ±15V | 1140pF @ 25V | - | 1.36W (Ta), 62.5W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |