Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 226/999
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Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET N-CH 40V SO8FL |
4.752 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | - | 4.5V, 10V | 10.3mOhm @ 20A, 10V | 2V @ 250µA | 7.3nC @ 10V | ±20V | 570pF @ 25V | - | 3.5W (Ta), 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 30V 75A D2PAK |
35.616 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 5V, 10V | 4.6mOhm @ 25A, 10V | 2V @ 1mA | - | ±10V | 8600pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Panasonic Electronic Components |
MOSFET N CH 33V 10A WMINI8-F1 |
4.248 |
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- | N-Channel | MOSFET (Metal Oxide) | 33V | 10A (Ta) | 4.5V, 10V | 10mOhm @ 5A, 10V | 2.5V @ 1.12mA | 7.2nC @ 4.5V | ±20V | 750pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | WMini8-F1 | 8-SMD, Flat Lead |
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Rohm Semiconductor |
NCH 200V 5A POWER MOSFET |
3.420 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 5A (Tc) | 10V | 760mOhm @ 2.5A, 10V | 5.25V @ 1mA | 8.3nC @ 10V | ±30V | 330pF @ 25V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 13A 8-SOIC |
6.660 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 9mOhm @ 13A, 10V | 3V @ 250µA | 14nC @ 5V | ±20V | 1108pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 100V 17A TP |
19.608 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Ta) | 4V, 10V | 111mOhm @ 8.5A, 10V | 2.6V @ 1mA | 19nC @ 10V | ±20V | 1030pF @ 20V | - | 1W (Ta), 35W (Tc) | 150°C (TJ) | Surface Mount | TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 200V 1.7A 8-SOIC |
4.608 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 1.7A (Ta) | 6V, 10V | 240mOhm @ 2.2A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET N-CH 40V 75A I2PAK |
49.056 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 7.4mOhm @ 20A, 10V | 4V @ 1mA | 24nC @ 10V | ±20V | 1730pF @ 25V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET P-CH 30V 75A POWERPAKSO-8 |
8.010 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 4.5V, 10V | 8.1mOhm @ 16A, 10V | 2.5V @ 250µA | 108nC @ 10V | ±20V | 4877pF @ 15V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET P-CH 40V 36A DPAK |
5.310 |
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STripFET™ F6 | P-Channel | MOSFET (Metal Oxide) | 40V | 36A (Tc) | 4.5V, 10V | 20.5mOhm @ 18A, 10V | 2.5V @ 250µA | 22nC @ 4.5V | ±20V | 2850pF @ 25V | - | 60W (Tc) | 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET P-CH 60V 14A CPT3 |
3.996 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 14A (Ta) | 4V, 10V | 84mOhm @ 14A, 10V | 3V @ 1mA | 27nC @ 10V | ±20V | 1900pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
40V N CH MOSFET |
7.758 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 124A (Tc) | 4.5V, 10V | 5.3mOhm @ 19A, 10V | 2.4V @ 250µA | 61nC @ 10V | ±20V | 4280pF @ 20V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET NCH 60V 16.3A TO252 |
5.292 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 16.3A (Ta), 70A (Tc) | 10V | 8mOhm @ 20A, 10V | 4V @ 250µA | 38.1nC @ 10V | ±20V | 2841pF @ 30V | - | 3.1W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
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ON Semiconductor |
NMOS DPAK 40V 7.1 MOHM |
3.780 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 25A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | 3V @ 250µA | 27nC @ 10V | ±20V | 1210pF @ 20V | - | 48.4W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 250V 8A DPAK |
3.042 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 420mOhm @ 8A, 10V | 4V @ 250µA | 16nC @ 10V | ±20V | 500pF @ 25V | - | 72W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CHAN 40V PPAK 1212-8SH |
6.066 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 17.6A (Ta), 35A (Tc) | 4.5V, 10V | 7.6mOhm @ 16.2A, 10V | 2.2V @ 250µA | 40nC @ 10V | ±20V | 1530pF @ 20V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH |
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Vishay Siliconix |
MOSFET N-CH 60V 8A |
3.708 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Tc) | 4.5V, 10V | 36mOhm @ 5.3A, 10V | 2.5V @ 250µA | 20nC @ 10V | ±20V | 755pF @ 25V | - | 39W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Infineon Technologies |
MOSFET N-CH 55V 30A I-PAK |
41.988 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 24.5mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 740pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET P-CH 60V 18.3A TO252 |
6.642 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 18.3A (Tc) | 4.5V, 10V | 60mOhm @ 10A, 10V | 3V @ 250µA | 40nC @ 10V | ±20V | 1710pF @ 25V | - | 2.3W (Ta), 38.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
8.208 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 4.7mOhm @ 15A, 10V | 2.4V @ 250µA | 54nC @ 10V | ±20V | 2071pF @ 15V | - | 5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 20V 4.4A 1206-8 |
2.700 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 4.4A (Ta) | 2.5V, 4.5V | 45mOhm @ 4.4A, 4.5V | 1.4V @ 250µA | 22nC @ 4.5V | ±12V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET™ | 8-SMD, Flat Lead |
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Vishay Siliconix |
MOSFET P-CH 20V 3.6A 2X2 4-MFP |
8.244 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 3.6A (Ta) | 2.5V, 4.5V | 65mOhm @ 1A, 4.5V | 1.4V @ 250µA | 17nC @ 4.5V | ±12V | - | - | 1.47W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA, CSPBGA |
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ON Semiconductor |
MOSFET N-CH 40V 8PQFN |
3.078 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 30A (Tc) | 10V | 7.8mOhm @ 30A, 10V | 4V @ 250µA | 22nC @ 10V | ±20V | 1100pF @ 20V | - | 68.2W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 60V 6A 1212-8 |
3.780 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 6A (Tc) | 4.5V, 10V | 58mOhm @ 5.4A, 10V | 3V @ 250µA | 20nC @ 10V | ±20V | 665pF @ 15V | - | 3.2W (Ta), 19.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CHAN 30V SO-8 |
6.786 |
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TrenchFET® Gen IV | P-Channel | MOSFET (Metal Oxide) | 30V | 20.5A (Ta), 27.8A (Tc) | 4.5V, 10V | 4.9mOhm @ 15A, 10V | 2.2V @ 250µA | 84nC @ 10V | +20V, -16V | 3490pF @ 15V | - | 3.1W (Ta), 5.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 60V 32A POWERFLAT |
6.714 |
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Automotive, AEC-Q101, STripFET™ F6 | N-Channel | MOSFET (Metal Oxide) | 60V | 32A (Tc) | 4.5V, 10V | 27mOhm @ 9.6A, 10V | 2.5V @ 250µA | 27nC @ 10V | ±20V | 1340pF @ 25V | - | 4.8W (Ta), 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET P-CH 20V 4.4A 1206-8 |
6.156 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 4.4A (Ta) | 2.5V, 4.5V | 45mOhm @ 4.4A, 4.5V | 1.4V @ 250µA | 22nC @ 4.5V | ±12V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET™ | 8-SMD, Flat Lead |
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ON Semiconductor |
MOSFET P-CH 35V 4.3A 6-SSOT |
8.874 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 35V | 4.3A (Ta) | 4.5V, 10V | 55mOhm @ 4.2A, 10V | 3V @ 250µA | 15nC @ 10V | ±20V | 705pF @ 20V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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STMicroelectronics |
MOSFET N-CH 400V 3A DPAK |
4.932 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 400V | 3A (Tc) | 10V | 1.8Ohm @ 1.5A, 10V | 4.5V @ 50µA | 17nC @ 10V | ±30V | 305pF @ 25V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET N-CH 600V 0.2A SOT89-3 |
4.554 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 200mA (Tj) | 4.5V, 10V | 20Ohm @ 100mA, 10V | 4V @ 2mA | - | ±20V | 150pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |