Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 200/999
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Hersteller |
Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Diodes Incorporated |
MOSFET N-CH 60V 0.3A SOT323 |
8.406 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 5V, 10V | 3Ohm @ 115mA, 10V | 2V @ 250µA | 0.87nC @ 10V | ±20V | 22pF @ 25V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Nexperia |
MOSFET N-CH 30V TO-236AB |
5.292 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 4.4A (Ta) | 4.5V, 10V | 36mOhm @ 4.4A, 10V | 2V @ 250µA | 9nC @ 10V | ±20V | 281pF @ 15V | - | 500mW (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 20V 4A MCPH6 |
4.680 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | - | 83mOhm @ 2A, 4.5V | - | 4.6nC @ 4.5V | - | 375pF @ 10V | - | - | - | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 30V 11A 8-HUML |
4.554 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 11.3mOhm @ 11A, 10V | 2.5V @ 250µA | 7.4nC @ 10V | ±20V | 504pF @ 15V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | HUML2020L8 | 8-PowerUDFN |
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Diodes Incorporated |
MOSFET P-CH 20V 2.9A 8DFN |
3.508 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.9A (Ta) | 1.8V, 4.5V | 95mOhm @ 2.8A, 4.5V | 1.3V @ 250µA | - | ±12V | 632pF @ 10V | Schottky Diode (Isolated) | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN3020B (3x2) | 8-VDFN Exposed Pad |
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Micro Commercial Co |
N-CHANNEL MOSFET, SOT-523 PACKAG |
4.680 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 500mA (Tc) | 4.5V | 850mOhm @ 500mA, 2.5V | 1.2V @ 250µA | 750nC @ 4.5V | ±12V | 100pF @ 16V | - | 150mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Rohm Semiconductor |
MOSFET P-CH 12V 4A TUMT3 |
4.590 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 4A (Ta) | 1.5V, 4.5V | 30mOhm @ 4A, 4.5V | 1V @ 1mA | 37nC @ 4.5V | -8V | 4000pF @ 6V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
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STMicroelectronics |
MOSFET P-CH 20V 1.4A SOT-23 |
6.768 |
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STripFET™ H7 | P-Channel | MOSFET (Metal Oxide) | 20V | 1.4A (Ta) | 1.8V, 4.5V | 100mOhm @ 700mA, 4.5V | 1V @ 250µA | 4.8nC @ 4.5V | ±8V | 510pF @ 10V | - | 350mW (Tc) | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 9A 8-SOIC |
5.202 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 18mOhm @ 9A, 10V | 2.1V @ 250µA | 25nC @ 10V | ±25V | 741pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
PMPB100ENE/SOT1220/SOT1220 |
8.370 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
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Nexperia |
MOSFET N-CH 20V 4.8A 6TSOP |
4.266 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 4.8A (Ta) | 1.5V, 4.5V | 36mOhm @ 4.8A, 4.5V | 900mV @ 250µA | 9nC @ 4.5V | ±8V | 558pF @ 10V | - | 530mW (Ta), 4.46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 30A 8DFN |
2.250 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta), 40A (Tc) | 4.5V, 10V | 7.5mOhm @ 18A, 10V | 2.5V @ 250µA | 26nC @ 10V | ±20V | 1440pF @ 15V | - | 4.1W (Ta), 24W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3x3) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 20V 2.5A U-WLB1510-6 |
3.006 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 1.5V, 4.5V | 70mOhm @ 1A, 4.5V | 1V @ 250µA | 2.9nC @ 4.5V | ±8V | 210pF @ 10V | - | 920mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-WLB1510-6 | 6-UFBGA, WLBGA |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 12V 10A UDFN6B |
3.150 |
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U-MOSVII | P-Channel | MOSFET (Metal Oxide) | 12V | 10A (Ta) | 1.8V, 8V | 16.2mOhm @ 4A, 8V | 1V @ 1mA | 19.5nC @ 4.5V | ±10V | 1400pF @ 6V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Diodes Incorporated |
MOSFET P-CH 100V 0.075A SOT23-3 |
3.600 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 75mA (Ta) | 10V | 20Ohm @ 150mA, 10V | 3.5V @ 1mA | - | ±20V | 50pF @ 25V | - | 330mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 10.4A 8SO |
2.466 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 10.4A (Ta) | 4.5V, 10V | 13mOhm @ 10.4A, 10V | 2.2V @ 250µA | 45.7nC @ 10V | ±12V | 2296pF @ 15V | Schottky Diode (Body) | 1.55W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET P-CH 20V 0.15A SOT-1123 |
5.958 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 150mA (Ta) | 1.2V, 4.5V | 3.5Ohm @ 100mA, 4.5V | 1V @ 250µA | - | ±8V | 13pF @ 15V | - | 125mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-1123 | SOT-1123 |
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ON Semiconductor |
MOSFET N-CH 30V 19A 8MLP |
29.892 |
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PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta), 21A (Tc) | 4.5V, 10V | 4.4mOhm @ 19A, 10V | 3V @ 1mA | 52nC @ 10V | ±20V | 3165pF @ 15V | - | 2.4W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET P-CH 20V 6A TSOT26 |
5.274 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.8V, 4.5V | 35mOhm @ 4A, 4.5V | 1.5V @ 250µA | 23.1nC @ 4.5V | ±12V | 2400pF @ 10V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET N-CH 20V 2.1A MICROFOOT |
7.866 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | - | 1.5V, 4.5V | 72mOhm @ 1A, 4.5V | 900mV @ 250µA | 8nC @ 8V | ±8V | 245pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 4.2A |
8.856 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 1.5V, 4V | 28mOhm @ 3A, 4V | 1V @ 1mA | 16.8nC @ 4V | ±10V | 1050pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UF6 | 6-SMD, Flat Leads |
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ON Semiconductor |
MOSFET P-CH 20V 1A SOT-23-3 |
7.758 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 4.5V, 10V | 180mOhm @ 1.5A, 10V | 2.3V @ 250µA | 2.5nC @ 5V | ±20V | 165pF @ 5V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Micro Commercial Co |
N-CHANNEL MOSFET, SOP-8 PACKAGE |
2.340 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.5A (Ta) | 10V | 13.5mOhm @ 10A, 10V | 3V @ 250µA | 40nC @ 10V | ±12V | 9130pF @ 10V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET N-CH 60V TO-236AB |
5.958 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 2.1A (Ta) | 4.5V, 10V | 123mOhm @ 2.1A, 10V | 2.7V @ 250µA | 7.4nC @ 10V | ±20V | 275pF @ 30V | - | 513mW (Ta), 6.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 12V 12A SC-70-6L |
8.586 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 12A (Tc) | 1.5V, 4.5V | 13.5mOhm @ 7A, 4.5V | 850mV @ 250µA | 80nC @ 8V | ±8V | 2880pF @ 6V | - | 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Toshiba Semiconductor and Storage |
MOSFET P CH 20V 6A UF6 |
7.182 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 22.5mOhm @ 6A, 4.5V | 1V @ 1mA | 23.1nC @ 4.5V | ±8V | 1650pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Nexperia |
PMPB29XPEA/SOT1220/SOT1220 |
5.238 |
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Automotive, AEC-Q101, TrenchMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 5A (Ta) | 1.8V, 4.5V | 32.5mOhm @ 5A, 4.5V | 1V @ 250µA | 45nC @ 4.5V | ±12V | 2970pF @ 10V | - | 1.7W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 4.2A UFM |
2.646 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 1.5V, 4V | 28mOhm @ 3A, 4V | 1V @ 1mA | 13.6nC @ 4V | ±10V | 1010pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Micro Commercial Co |
MOSFET P-CH 12V 6A DFN202 |
4.806 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 6A (Ta) | 1.8V, 4.5V | 45mOhm @ 3.5A, 4.5V | 0.9V @ 250µA | 7.8nC @ 4.5V | ±8V | 740pF @ 4V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020-6J | 6-WDFN Exposed Pad |
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Microchip Technology |
MOSFET N-CH 25V 8PDFN |
4.734 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 48A (Tc) | 4.5V, 10V | 10.5mOhm @ 10V | 1.7V @ 250µA | 10nC @ 4.5V | +10V, -8V | 580pF @ 12.5V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3x3) | 8-PowerTDFN |