Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 202/999
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Nexperia |
MOSFET N-CH 55V 42A D2PAK |
31.692 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4.5V, 5V | 25mOhm @ 15A, 10V | 2V @ 1mA | - | ±10V | 1725pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 25A 8PDFN |
3.852 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Tc) | 4.5V, 10V | 18mOhm @ 12A, 10V | 2.5V @ 250µA | 4.1nC @ 4.5V | ±20V | 345pF @ 25V | - | 21W (Tc) | 150°C (TJ) | Surface Mount | 8-PDFN (3x3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 50V 220MA SOT23 |
3.114 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 220mA (Ta) | 4.5V, 10V | 3.5Ohm @ 220mA, 10V | 1.5V @ 1mA | 2.4nC @ 10V | ±20V | 27pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 20V 2A MCPH3 |
8.928 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.2V, 4.5V | 104mOhm @ 1A, 4.5V | 900mV @ 1mA | 2.9nC @ 4.5V | ±9V | 175pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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Rohm Semiconductor |
RQ5E020SP IS A SMALL SIGNAL MOSF |
8.118 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 120mOhm @ 2A, 10V | 2.5V @ 1mA | 4.3nC @ 5V | ±20V | 370pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 30V 10A 8-HSMT |
6.264 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 11.7mOhm @ 10A, 10V | 2.5V @ 1mA | 7.9nC @ 10V | ±20V | 420pF @ 15V | - | 2W (Ta), 15W (Tc) | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET N-CH 30V 16A 8HSMT |
3.312 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 4.5mOhm @ 16A, 10V | 2.5V @ 1mA | 51nC @ 10V | ±20V | 2550pF @ 15V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V SOT23 |
8.856 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 1.2A (Ta) | 4.5V, 10V | 250mOhm @ 1.8A, 10V | 3V @ 250µA | 3.2nC @ 10V | ±20V | 166pF @ 40V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 20V 9A SC-75-6 |
4.122 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 9A (Tc) | 1.5V, 4.5V | 30mOhm @ 5A, 4.5V | 1V @ 250µA | 18nC @ 8V | ±8V | - | - | 2.5W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-75-6L Single | PowerPAK® SC-75-6L |
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Vishay Siliconix |
MOSFET P-CH 20V 6A 6TSOP |
2.700 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Tc) | 1.8V, 4.5V | 38mOhm @ 5.2A, 4.5V | 1V @ 250µA | 45nC @ 8V | ±8V | 1300pF @ 10V | - | 3.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 30V 4.6A SOT23-6 |
3.852 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 4.6A (Ta) | 4.5V, 10V | 31mOhm @ 4.6A, 10V | 3V @ 250µA | 7.9nC @ 10V | ±20V | 535pF @ 15V | - | 960mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 20V 28A 8SOP |
2.718 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 28A (Ta) | 1.8V, 4.5V | 20mOhm @ 20A, 4.5V | 1V @ 250µA | 12.3nC @ 4.5V | ±8V | 961pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET P-CH 30V 200MA SOT416 |
2.412 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 200mA (Ta) | 4V, 10V | 1.4Ohm @ 200mA, 10V | 2.5V @ 1mA | - | ±20V | 30pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | EMT3 | SC-75, SOT-416 |
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Rohm Semiconductor |
MOSFET P-CH 20V 0.25A SOT-323 |
7.434 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 2.5V, 4.5V | 1.5Ohm @ 250mA, 4.5V | 2V @ 1mA | - | ±12V | 50pF @ 10V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | UMT3 | SC-70, SOT-323 |
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Vishay Siliconix |
MOSFET N-CH 100V 6.3A SC75-6L |
8.604 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 6.3A (Tc) | 4.5V, 10V | 185mOhm @ 1.9A, 10V | 3V @ 250µA | 5nC @ 10V | ±20V | 130pF @ 50V | - | 2.4W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-75-6L Single | PowerPAK® SC-75-6L |
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Nexperia |
MOSFET N-CH 60V 17A LFPAK |
7.146 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 5V | 46mOhm @ 5A, 10V | 2.1V @ 1mA | 6nC @ 5V | ±10V | 683pF @ 25V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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Nexperia |
MOSFET N-CH 40V MLFPAK |
4.680 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 33A (Tc) | 10V | 21mOhm @ 10A, 10V | 4V @ 1mA | 10.7nC @ 10V | ±20V | 593pF @ 25V | - | 44W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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Vishay Siliconix |
MOSFET P-CH 30V 2.7A SOT23-3 |
3.600 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 2.7A (Tc) | 4.5V, 10V | 190mOhm @ 1.9A, 10V | 3V @ 250µA | 8nC @ 10V | ±20V | 155pF @ 15V | - | 2.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS:-3 |
3.798 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 1.8V, 10V | 42mOhm @ 5A, 10V | 1.2V @ 1mA | 8.2nC @ 4.5V | +12V, -6V | 560pF @ 15V | - | 1W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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ON Semiconductor |
MOSFET N-CH 90V 38A DPAK |
19.068 |
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- | N-Channel | MOSFET (Metal Oxide) | 90V | 8.7A (Ta), 41A (Tc) | 4.5V, 10V | 20mOhm @ 20A, 10V | 2.5V @ 250µA | 61nC @ 10V | ±20V | 2900pF @ 25V | - | 3.8W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Panasonic Electronic Components |
MOSFET N-CH 200V 2.5A UG-1 |
24.498 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 2.5A (Tc) | 10V | 1.7Ohm @ 1.25A, 10V | 4V @ 1mA | - | ±20V | 170pF @ 20V | - | 1W (Ta), 10W (Tc) | 150°C (TJ) | Surface Mount | U-G1 | U-G1 |
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Rohm Semiconductor |
MOSFET P-CH 30V 1.5A WEMT6 |
7.830 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4V, 10V | 160mOhm @ 1.5A, 10V | 2.5V @ 1mA | 6.5nC @ 10V | ±20V | 230pF @ 10V | - | 400mW (Ta) | 150°C (TJ) | Surface Mount | 6-WEMT | SOT-563, SOT-666 |
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Texas Instruments |
30V N CH MOSFET |
2.916 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Tc) | 2.5V, 8V | 15.1mOhm @ 8A, 8V | 1.2V @ 250µA | 6nC @ 4.5V | ±10V | 879pF @ 15V | - | 16W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WSON (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.8A UFM |
5.580 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1.8A (Ta) | 1.5V, 4V | 149mOhm @ 600mA, 4V | 1V @ 1mA | 7.7nC @ 4V | ±8V | 331pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 30V 3A TSMT3 |
3.240 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 3A (Ta) | 4V, 10V | 75mOhm @ 3A, 10V | 2.5V @ 1mA | 5.2nC @ 5V | ±20V | 480pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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ON Semiconductor |
MOSFET P-CH 20V 2.2A CHIPFET |
4.842 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.2A (Tj) | 2.5V, 4.5V | 155mOhm @ 2.2A, 4.5V | 1.2V @ 250µA | 6nC @ 4.5V | ±12V | 300pF @ 10V | Schottky Diode (Isolated) | 1.1W (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | ChipFET™ | 8-SMD, Flat Lead |
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Nexperia |
MOSFET P-CH 20V 7.2A SOT1220 |
8.892 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 7.2A (Ta) | 1.8V, 4.5V | 23.5mOhm @ 7.2A, 4.5V | 900mV @ 250µA | 45nC @ 4.5V | ±12V | 294pF @ 10V | - | 1.7W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
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Rohm Semiconductor |
MOSFET N-CH 20V 1.5A TSMT5 |
5.382 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.8V, 4.5V | 180mOhm @ 1.5A, 4.5V | 1.3V @ 1mA | 2.5nC @ 4.5V | ±10V | 110pF @ 10V | Schottky Diode (Isolated) | 900mW (Ta) | 150°C (TJ) | Surface Mount | TSMT5 | SOT-23-5 Thin, TSOT-23-5 |
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Vishay Siliconix |
MOSFET N-CHAN 60V POWERPAK SC-70 |
3.330 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 9A (Tc) | 4.5V, 10V | 32mOhm @ 3A, 10V | 2.5V @ 250µA | 9.7nC @ 10V | ±20V | 636pF @ 25V | - | 13.6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Rohm Semiconductor |
MOSFET P-CH 30V 5A TSMT |
8.280 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 27mOhm @ 5A, 10V | 2.5V @ 1mA | 20.8nC @ 10V | ±20V | 940pF @ 15V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |