Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 168/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Rohm Semiconductor |
4V DRIVE NCH MOSFET. POWER MOSFE |
21.414 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Ta) | 4V, 10V | 37mOhm @ 6.5A, 10V | 2.5V @ 1mA | 16nC @ 5V | 20V | 900pF @ 10V | - | 2W (Ta) | 150°C | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 31.4A SO8FL |
13.848 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 31.4A (Ta), 143A (Tc) | 4.5V, 10V | 2.1mOhm @ 30A, 10V | 2.2V @ 250µA | 45.2nC @ 10V | ±20V | 3071pF @ 15V | - | 3.71W (Ta), 77W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 60V PPAK SO-8L |
27.006 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 60V | 23A (Ta), 79.4A (Tc) | 6V, 10V | 4.5mOhm @ 15A, 10V | 3.6V @ 250µA | 37nC @ 10V | ±20V | 1710pF @ 30V | - | 5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 11A 8-SOIC |
22.842 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 7mOhm @ 16A, 10V | 2.5V @ 250µA | 18nC @ 4.5V | ±20V | - | - | 1.47W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 950V 4A TO252 |
19.272 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 4A (Tc) | 10V | 2Ohm @ 1.7A, 10V | 3.5V @ 80µA | 10nC @ 10V | ±20V | 330pF @ 400V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
RD3G400GN IS A POWER MOSFET WITH |
20.538 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Ta) | 4.5V, 10V | 7.5mOhm @ 40A, 10V | 2.5V @ 1mA | 19nC @ 10V | ±20V | 1410pF @ 20V | - | 26W (Ta) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 250V POWERPAK 1212 |
25.488 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 3.4A (Ta), 12.3A (Tc) | 7.5V, 10V | 173mOhm @ 3.6A, 10V | 4V @ 250µA | 16nC @ 10V | ±20V | 350pF @ 125V | - | 5.1W (Ta), 65.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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Vishay Siliconix |
MOSFET N-CHAN 200V POWERPAK SO-8 |
26.052 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | - | 7.5V, 10V | 50mOhm @ 10A, 10V | 3.1V @ 250µA | 19.5nC @ 10V | - | 1110pF @ 100V | - | - | -55°C ~ 125°C | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 30V 26A TDSON-8 |
47.742 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 26A (Ta), 100A (Tc) | 4.5V, 10V | 2.3mOhm @ 30A, 10V | 2V @ 250µA | 26nC @ 10V | ±20V | 1600pF @ 15V | - | 2.5W (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 600V 4.5A TO-252-3 |
24.348 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 900mOhm @ 2.3A, 10V | 3.5V @ 250µA | 17nC @ 10V | ±20V | 720pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFETN-CH 40VPOWERDI5060-8 |
19.830 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 22A (Ta), 100A (Tc) | 5V, 10V | 3.3mOhm @ 20A, 10V | 2.5V @ 250µA | 49nC @ 10V | ±20V | 3.367nF @ 20V | - | 2.7W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 20V 27A DIRECTFET |
33.000 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 27A (Ta), 150A (Tc) | 4.5V, 10V | 2.7mOhm @ 27A, 10V | 2.45V @ 250µA | 42nC @ 4.5V | ±20V | 4130pF @ 10V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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ON Semiconductor |
T8 60V LOW COSS |
14.058 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 16.2A (Ta), 67A (Tc) | 4.5V, 10V | 7.2mOhm @ 20A, 10V | 2V @ 56µA | 17nC @ 10V | ±20V | 1131pF @ 30V | - | 3.7W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Texas Instruments |
MOSFET N-CH 30V 87A 8SON |
49.572 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 87A (Tc) | 4.5V, 10V | 8.1mOhm @ 14A, 10V | 2V @ 250µA | 4.3nC @ 4.5V | ±20V | 695pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 52A SO8FL |
17.478 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 52A (Tc) | 4.5V, 10V | 5.8mOhm @ 30A, 10V | 2.1V @ 250µA | 22.2nC @ 10V | ±20V | 1252pF @ 15V | - | 760mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 40V 120A LFPAK56 |
17.910 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Ta) | 10V | 3mOhm @ 25A, 10V | 3.6V @ 1mA | 59nC @ 10V | +20V, -10V | 5449pF @ 25V | - | 172W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Micro Commercial Co |
N-CHANNEL,MOSFETS,DFN5060 PACKAG |
38.706 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 4.2mOhm @ 40A, 10V | 2.5V @ 250µA | 67nC @ 10V | ±20V | 3980pF @ 30V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060 | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET P-CH 30V POWERPAK SO-8 |
24.822 |
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TrenchFET® Gen IV | P-Channel | MOSFET (Metal Oxide) | 30V | 26A (Ta), 60A (Tc) | 4.5V, 10V | 4.9mOhm @ 15A, 10V | 2.2V @ 250µA | 112nC @ 10V | +16V, -20V | 3490pF @ 15V | - | 5W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 60V POWERPAK SO-8 |
28.500 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 60V | 10.3A (Ta), 12A (Tc) | 4.5V, 10V | 19.5mOhm @ 10A, 10V | 2.8V @ 250µA | 17nC @ 10V | ±20V | 790pF @ 30V | - | 3.6W (Ta), 35.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 950V 6A SOT223 |
27.492 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 6A (Tc) | 10V | 1.2Ohm @ 2.7A, 10V | 3.5V @ 140µA | 15nC @ 10V | ±20V | 478pF @ 400V | - | 7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
20.814 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 21A (Ta), 121A (Tc) | 10V | 3.3mOhm @ 21A, 10V | 4V @ 250µA | 77nC @ 10V | ±20V | 5022pF @ 20V | - | 3.1W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Rohm Semiconductor |
NCH 60V 30A MIDDLE POWER MOSFET |
25.374 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 9A (Ta), 30A (Tc) | 4.5V, 10V | 13.9mOhm @ 9A, 10V | 2.7V @ 300µA | 24.5nC @ 10V | ±20V | 1260pF @ 30V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 100A POWERPAKSO |
28.146 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 0.8mOhm @ 20A, 10V | 2V @ 250µA | 153nC @ 10V | +20V, -16V | 10180pF @ 15V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Rohm Semiconductor |
NCH 100V 10A POWER MOSFET |
25.830 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Ta) | 4V, 10V | 133mOhm @ 5A, 10V | 2.5V @ 1mA | 18nC @ 10V | ±20V | 700pF @ 25V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CHANNEL 30V 15A 8SOIC |
19.656 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 15A (Tc) | 4.5V, 10V | 18mOhm @ 8A, 10V | 2.5V @ 250µA | 58nC @ 10V | ±20V | 2170pF @ 15V | - | 6.8W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 600V 4.6A DPAK |
38.118 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.6A (Tc) | 10V | 950mOhm @ 2.3A, 10V | 5V @ 250µA | 16nC @ 10V | ±30V | 600pF @ 25V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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EPC |
GANFET TRANS 100V DIE CU PILLAR |
42.354 |
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eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 1.7A | 5V | 25mOhm @ 3A, 5V | 2.5V @ 1.5mA | 2.1nC @ 5V | +6V, -4V | 258pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Vishay Siliconix |
MOSFET P-CH 150V 2.17A 1212-8 |
24.258 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 2.17A (Tc) | 6V, 10V | 1.2Ohm @ 500mA, 10V | 4.5V @ 250µA | 12nC @ 10V | ±20V | 510pF @ 25V | - | 3.2W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 8.9A 8-SOIC |
24.366 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.9A (Ta) | 4.5V, 10V | 11mOhm @ 12A, 10V | 3V @ 250µA | 38nC @ 10V | ±20V | 1580pF @ 15V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 40V 58A DPAK |
24.660 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 58A (Tc) | 4.5V, 10V | 3.1mOhm @ 29A, 10V | 2.4V @ 500µA | 60nC @ 10V | ±20V | 4670pF @ 20V | - | 87W (Tc) | 175°C | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |