Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 169/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 30V 60A POWERPAKSO-8 |
27.414 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 1.1mOhm @ 15A, 10V | 2.4V @ 250µA | 111nC @ 10V | +20V, -16V | 5060pF @ 15V | Schottky Diode (Body) | 54.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
COOLMOS P7 800V SOT-223 |
27.690 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 750mOhm @ 2.7A, 10V | 3.5V @ 140µA | 17nC @ 10V | ±20V | 460pF @ 500V | - | 7.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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ON Semiconductor |
MOSFET N-CH 600V 7.3A TO-252-3 |
19.974 |
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HiPerFET™, Polar™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 620mOhm @ 3.6A, 10V | 5V @ 250µA | 36nC @ 10V | ±20V | 1135pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CHANNEL 30V 40A 1212-8S |
72.342 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.1mOhm @ 10A, 10V | 2.2V @ 250µA | 68nC @ 10V | +20V, -16V | 3420pF @ 15V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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Vishay Siliconix |
MOSFET P-CH 20V 4.8A 2X2 4-MFP |
24.528 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 4.8A (Ta) | 2.5V, 4.5V | 48mOhm @ 1A, 4.5V | 1.4V @ 250µA | 21nC @ 4.5V | ±12V | - | - | 1.47W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA, CSPBGA |
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Vishay Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
25.062 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 2.6A (Tc) | 10V | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 32A PPAK SO-8 |
27.888 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 21.4A TO252 |
25.116 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 21.4A (Tc) | 4.5V, 10V | 31mOhm @ 15A, 10V | 3V @ 250µA | 17nC @ 10V | ±20V | 670pF @ 25V | - | 5.7W (Ta), 31.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 30V 35A DPAK |
25.656 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 19.5mOhm @ 17.5A, 10V | 2.5V @ 250µA | 17nC @ 5V | ±16V | 800pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MIDDLE POWER MOSFET SERIES (SING |
20.292 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4V, 10V | 15.4mOhm @ 9A, 10V | 2.5V @ 1mA | 56nC @ 10V | ±20V | 3000pF @ 10V | - | 650mW (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CHAN 30V |
24.354 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 51.4A (Ta), 80A (Tc) | 4.5V, 10V | 1.2mOhm @ 15A, 10V | 2.2V @ 250µA | 93nC @ 10V | +16V, -12V | 4460pF @ 15V | - | 5.2W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Rohm Semiconductor |
RD3P100SNFRA IS A POWER MOSFET W |
22.122 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Ta) | 4V, 10V | 133mOhm @ 5A, 10V | 2.5V @ 1mA | 18nC @ 10V | ±20V | 700pF @ 25V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 250V 2.2A DPAK |
29.106 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 2.2A (Tc) | 10V | 2Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 30V 6.4A PPAK 1212-8 |
92.706 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 6.4A (Ta) | 4.5V, 10V | 25mOhm @ 9.8A, 10V | 3V @ 250µA | 40nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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STMicroelectronics |
MOSFET P-CH 20V 9A POWERFLAT |
22.818 |
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STripFET™ | P-Channel | MOSFET (Metal Oxide) | 20V | 9A (Tc) | 1.5V, 4.5V | 22.5mOhm @ 4.5A, 4.5V | 1V @ 250µA | 22nC @ 4.5V | ±8V | 2390pF @ 16V | - | 2.9W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (3.3x3.3) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CHAN 100V POWERPAK SO-8 |
28.200 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 100V | 10.9A (Ta), 38.7A (Tc) | 7.5V, 10V | 17.4mOhm @ 10A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | 1470pF @ 50V | - | 5W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 9A PPAK 1212-8 |
27.714 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 12mOhm @ 14A, 10V | 3V @ 250µA | 20nC @ 5V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 30V 30A POWERPAKSO-8 |
25.728 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 8.5mOhm @ 10A, 10V | 2.5V @ 250µA | 109nC @ 10V | ±20V | 4500pF @ 15V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 20V 100A TO252AA |
15.774 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 100A (Tc) | 4.5V, 10V | 3.5mOhm @ 30A, 10V | 2.5V @ 250µA | 110nC @ 10V | ±20V | 5500pF @ 10V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
N-CHANNEL 40-V (D-S) 175C MOSF |
22.146 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-252 (DPAK) | TO-252-4, DPak (3 Leads + Tab) |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO252 |
17.382 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-252 (DPAK) | TO-252-4, DPak (3 Leads + Tab) |
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ON Semiconductor |
MOSFET N-CH 60V 7A DPAK-3 |
24.816 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 7A (Ta), 36A (Tc) | 10V | 26mOhm @ 36A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 800pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CHAN 60V POWERPAK 1212- |
26.010 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 60V | 17.4A (Ta), 65.3A (Tc) | 7.5V, 10V | 5.8mOhm @ 10A, 10V | 3.4V @ 250µA | 32nC @ 10V | ±20V | 1490pF @ 30V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S |
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Vishay Siliconix |
MOSFET N-CH 25V 60A POWERPAKSO-8 |
53.544 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 25V | 60A (Tc) | 4.5V, 10V | 0.76mOhm @ 15A, 10V | 2.2V @ 250µA | 155nC @ 10V | +16V, -12V | 7570pF @ 10V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CHAN 100V POWERPAK 1212 |
44.664 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 100V | 9.4A (Ta), 35.3A (Tc) | 7.5V, 10V | 17.4mOhm @ 10A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | 1470pF @ 50V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 1212-8 PPAK |
49.518 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11.3A (Tc) | 4.5V, 10V | 7.5mOhm @ 17.8A, 10V | 1.5V @ 250µA | 27nC @ 4.5V | ±12V | 2610pF @ 15V | - | 1.5W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH |
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Vishay Siliconix |
MOSFET N-CH 60V 46.5A PPAK SO-8 |
24.264 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 46.5A(Tc) | - | 8mOhm @ 20A, 10V | 2.5V @ 250µA | 32nC @ 10V | - | 1400pF @ 30V | - | - | - | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 16A 8SOIC |
23.700 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Tc) | 6V, 10V | 12mOhm @ 6A, 10V | 3.5V @ 250µA | 68nC @ 10V | ±20V | 3165pF @ 25V | - | 7.1W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 55V 30A TO252 |
19.902 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4.5V, 10V | 20mOhm @ 20A, 10V | 2.5V @ 250µA | 18nC @ 5V | ±20V | 1175pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 100A TO-252 |
22.368 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3.9mOhm @ 20A, 10V | 3.5V @ 250µA | 90nC @ 10V | ±20V | 6600pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |