Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 110/999
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXYS |
200V/220A ULTRA JUNCTION X3-CLAS |
7.992 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 220A (Tc) | 10V | 6.2mOhm @ 110A, 10V | 4.5V @ 4mA | 204nC @ 10V | ±20V | 13600pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268HV | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 500V 78A TO264 |
8.730 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 78A (Tc) | 10V | 68mOhm @ 500mA, 10V | 5V @ 4mA | 147nC @ 10V | ±30V | 9900pF @ 25V | - | 1130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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ON Semiconductor |
SIC MOS TO247-3L 80MW 120 |
8.856 |
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Automotive, AEC-Q101 | N-Channel | SiCFET (Silicon Carbide) | 1200V | 44A (Tc) | 20V | 110mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | +25V, -15V | 1670pF @ 800V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 600V 72.8A TO247-3 |
6.096 |
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SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 72.8A (Tc) | 10V | 38mOhm @ 38A, 10V | 5V @ 250µA | 300nC @ 10V | ±30V | 11045pF @ 100V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi |
MOSFET N-CH 1000V 12A TO-247 |
6.024 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1000V | 12A (Tc) | 10V | 950mOhm @ 6A, 10V | 5V @ 1mA | 71nC @ 10V | ±30V | 1969pF @ 25V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 58A TO-247 |
15.876 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 58A (Tc) | 10V | 45mOhm @ 29A, 10V | 5V @ 250µA | 143nC @ 10V | ±25V | 6420pF @ 100V | - | 330W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 150V 360A PLUS247 |
17.784 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 360A (Tc) | 10V | 4mOhm @ 60A, 10V | 5V @ 8mA | 715nC @ 10V | ±20V | 47500pF @ 25V | - | 1670W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 69A TO-247 |
13.512 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 69A (Tc) | 10V | 38mOhm @ 34.5A, 10V | 5V @ 250µA | 200nC @ 10V | 25V | 9800pF @ 100V | - | 400W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Transphorm |
GANFET N-CH 650V 47A TO247-3 |
8.028 |
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Automotive, AEC-Q101 | N-Channel | GaNFET (Gallium Nitride) | 650V | 47.2A (Tc) | 10V | 41mOhm @ 32A, 10V | 4.5V @ 1mA | 24nC @ 10V | ±20V | 1500pF @ 400V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
300V/210A ULTRA JUNCTION X3-CLAS |
6.768 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 210A (Tc) | 10V | 5.5mOhm @ 105A, 10V | 4.5V @ 8mA | 375nC @ 10V | ±20V | 24.2nF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 500V 44A SOT-227B |
8.676 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 120mOhm @ 500mA, 10V | 4V @ 8mA | 270nC @ 10V | ±20V | 8400pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 500V 20A TO-247 |
5.904 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 330mOhm @ 10A, 10V | - | 125nC @ 10V | ±30V | 2500pF @ 25V | Depletion Mode | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 40V 600A SOT-227 |
6.984 |
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GigaMOS™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 40V | 600A (Tc) | 10V | 1.05mOhm @ 100A, 10V | 3.5V @ 250µA | 590nC @ 10V | ±20V | 40000pF @ 25V | - | 940W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 500V 60A TO-264 |
6.984 |
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Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 60A (Tc) | 10V | 100mOhm @ 30A, 10V | 4.5V @ 250µA | 610nC @ 10V | ±30V | 24000pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 600V 90A SOT227 |
41 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 600V | 90A (Tc) | 10V | 56mOhm @ 55A, 10V | 5V @ 8mA | 245nC @ 10V | ±30V | 18000pF @ 25V | - | 1500W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET P-CH 500V 40A SOT227 |
7.326 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 500V | 40A (Tc) | 10V | 230mOhm @ 500mA, 10V | 4V @ 1mA | 205nC @ 10V | ±20V | 11500pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
850V/90A ULT JUNC X-C HIPERFET P |
6.840 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 90A (Tc) | 10V | 41mOhm @ 500mA, 10V | 5.5V @ 8mA | 340nC @ 10V | ±30V | 13300pF @ 25V | - | 1785W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS264™ | TO-264-3, TO-264AA |
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Vishay Semiconductor Diodes Division |
MOSFET N-CH 100V 190A SOT227 |
8.856 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 190A | 10V | 6.5mOhm @ 180A, 10V | 4.35V @ 250µA | 250nC @ 10V | ±20V | 10700pF @ 25V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 650V 145A SOT-227 |
7.020 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 145A (Tc) | 10V | 17mOhm @ 75A, 10V | 5V @ 8mA | 355nC @ 10V | ±30V | 21000pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Rohm Semiconductor |
MOSFET N-CH 50V 0.2A EMT3 |
92.742 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 0.9V, 4.5V | 2.2Ohm @ 200mA, 4.5V | 800mV @ 1mA | - | ±8V | 26pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | EMT3 | SC-75, SOT-416 |
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Nexperia |
MOSFET N-CH 60V TO-236AB |
25.044 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 265mA (Ta) | 2.5V, 10V | 3.5Ohm @ 200mA, 10V | 1.5V @ 250µA | 0.49nC @ 4.5V | ±20V | 20.2pF @ 30V | - | 310mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.15A CST3C |
73.422 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 150mA (Ta) | 4.5V, 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | ±20V | 17pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | CST3C | SOT-1123 |
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Nexperia |
MOSFET 2N-CH 60V SC-70 |
107.802 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 5V, 10V | 2.8Ohm @ 200mA, 10V | 2.1V @ 250µA | 1nC @ 10V | ±20V | 23.6pF @ 10V | - | 310mW (Ta), 1.67W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
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Nexperia |
MOSFET P-CH 30V SOT883 |
94.494 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 410mA (Ta) | 1.5V, 4.5V | 1.4Ohm @ 410mA, 4.5V | 950mV @ 250µA | 1.2nC @ 4.5V | ±8V | 43.2pF @ 15V | - | 310mW (Ta), 1.67W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006B-3 | 3-XFDFN |
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Nexperia |
MOSFET N-CH 30V SOT883 |
85.566 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 590mA (Ta) | 1.5V, 4.5V | 670mOhm @ 590mA, 4.5V | 950mV @ 250µA | 1.1nC @ 4.5V | ±8V | 30.3pF @ 15V | - | 310mW (Ta), 1.67W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006-3 | SC-101, SOT-883 |
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Nexperia |
MOSFET N-CH 30V 0.9A |
84.156 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 900mA (Ta) | 1.8V, 4.5V | 490mOhm @ 500mA, 4.5V | 1.05V @ 250µA | 1.16nC @ 4.5V | ±8V | 78pF @ 25V | - | 360mW (Ta), 2.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006-3 | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.4A |
22.650 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | ±20V | 40pF @ 10V | - | 270mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 20V 1A DFN1006B-3 |
92.148 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 1.8V, 4.5V | 380mOhm @ 500mA, 4.5V | 950mV @ 250µA | 0.68nC @ 4.5V | ±8V | 83pF @ 10V | - | 360mW (Ta), 2.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006B-3 | 3-XFDFN |
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Rohm Semiconductor |
MOSFET N-CH 20V 0.18A VML1006 |
76.134 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 180mA (Ta) | 1.2V, 4.5V | 2Ohm @ 150mA, 4.5V | 1V @ 100µA | - | ±10V | 12pF @ 10V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | DFN1006-3 (VML1006) | SC-101, SOT-883 |
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Nexperia |
MOSFET N-CH 30V 0.9A XQFN3 |
180.654 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 900mA (Ta) | 1.5V, 4.5V | 470mOhm @ 900mA, 4.5V | 950mV @ 250µA | 1.3nC @ 4.5V | ±8V | 41pF @ 15V | - | 350mW (Ta), 5.43W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006-3 | SC-101, SOT-883 |