Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 111/999
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Nexperia |
MOSFET P-CH 20V 680MA DFN1006B-3 |
194.394 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 680mA (Ta) | 1.8V, 4.5V | 850mOhm @ 400mA, 4.5V | 1.3V @ 250µA | 1.14nC @ 4.5V | ±8V | 87pF @ 10V | - | 360mW (Ta), 2.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006B-3 | 3-XFDFN |
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Nexperia |
MOSFET N-CH SOT883 |
85.836 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 480mA (Ta) | 1.8V, 4.5V | 1Ohm @ 200mA, 4.5V | 950mV @ 250µA | 0.89nC @ 4.5V | ±8V | 43pF @ 25V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006-3 | SC-101, SOT-883 |
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Nexperia |
MOSFET N-CH 30V SOT883 |
196.038 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 1.5V, 4.5V | 250mOhm @ 1.4A, 4.5V | 950mV @ 250µA | 2.7nC @ 4.5V | ±8V | 89pF @ 15V | - | 350mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006-3 | SC-101, SOT-883 |
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Rohm Semiconductor |
MOSFET N-CH 60V 0.25A EMT3 |
95.076 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 2.5V, 10V | 2.4Ohm @ 250mA, 10V | 2.3V @ 1mA | - | ±20V | 15pF @ 25V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | EMT3 | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
MOSFET NCH 20V 800MA CST3 |
320.646 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 20V | 800mA (Ta) | 1.5V, 4.5V | 235mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | ±8V | 55pF @ 10V | - | 500mW (Ta) | 150°C (TA) | Surface Mount | CST3 | 3-XFDFN |
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Nexperia |
MOSFET N-CH 30V SOT883 |
235.212 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 1.5V, 4.5V | 250mOhm @ 1.4A, 4.5V | 950mV @ 250µA | 2.7nC @ 4.5V | ±8V | 89pF @ 15V | - | 350mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006B-3 | 3-XFDFN |
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Micro Commercial Co |
N-CHANNEL MOSFET, SOT-723 PACKAG |
625.086 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 750mA | 4.5V | 800mOhm @ 450mA, 1.8V | 1V @ 250µA | - | ±12V | 120pF @ 16V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-723 | SOT-723 |
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Micro Commercial Co |
P-CHANNEL MOSFET, SOT-723 PACKAG |
87.402 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 660mA | 4.5V | 950mOhm @ 500mA, 10V | 800mV @ 250µA | - | ±6V | 170pF @ 16V | - | 150mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-723 | SOT-723 |
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Nexperia |
MOSFET P-CH 12V 3.2A DFN1010D-3G |
40.560 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 3.2A (Ta) | 1.2V, 4.5V | 72mOhm @ 3.2A, 4.5V | 1V @ 250µA | 12nC @ 4.5V | ±8V | 634pF @ 6V | - | 317mW (Ta), 8.33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1010D-3 | 3-XDFN Exposed Pad |
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Nexperia |
MOSFET P-CH 30V SOT883 |
79.758 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 1A (Ta) | 1.5V, 4.5V | 510mOhm @ 1A, 4.5V | 950mV @ 250µA | 1.4nC @ 4.5V | ±8V | 122pF @ 15V | - | 350mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006B-3 | 3-XFDFN |
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Micro Commercial Co |
N-CHANNEL MOSFET, SOT-23 PACKAGE |
22.062 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 10V | 90mOhm @ 2.2A, 4.5V | 3V @ 250µA | 10nC @ 10V | ±20V | 240pF @ 15V | - | 250mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Micro Commercial Co |
P-CHANNEL MOSFET, SOT-23 PACKAGE |
23.472 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.7A (Ta) | 10V | 135mOhm @ 2.6A, 4.5V | 3V @ 250µA | 6.2nC @ 4.5V | ±20V | 340pF @ 15V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Micro Commercial Co |
P-CHANNEL MOSFET, SOT-23 PACKAGE |
27.072 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 4.1A (Ta) | 10V | 87mOhm @ 2.9A, 4.5V | 3V @ 250µA | - | ±20V | 700pF @ 15V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET P-CH 20V DFN1010D-3G |
51.126 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.9A (Ta) | 1.2V, 4.5V | 85mOhm @ 2.9A, 4.5V | 1V @ 250µA | 12nC @ 4.5V | ±8V | 608pF @ 10V | - | 317mW (Ta), 8.33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1010D-3 | 3-XDFN Exposed Pad |
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Nexperia |
MOSFET P-CH 20V 3.5A SOT23 |
93.492 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 2.5V, 4.5V | 55mOhm @ 2.4A, 4.5V | 1.25V @ 250µA | 11nC @ 4.5V | ±12V | 1000pF @ 10V | - | 510mW (Ta), 4.15W (Tc) | 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 60V 540MA 3-DFN |
27.096 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 540mA (Ta) | 5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 1mA | 0.87nC @ 10V | ±20V | 30.2pF @ 25V | - | 430mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1212-3 | 3-UDFN |
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Nexperia |
MOSFET N-CH 30V 1.78A SOT883 |
662.682 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 1.78A (Tc) | 1.8V, 4.5V | 460mOhm @ 200mA, 4.5V | 950mV @ 250µA | 0.89nC @ 4.5V | ±8V | 43pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006-3 | SC-101, SOT-883 |
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Diodes Incorporated |
MOSFET P-CH 30V 3.1A TSOT26 |
46.986 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 3.1A (Ta) | 2.5V, 10V | 75mOhm @ 4.2A, 10V | 1.5V @ 250µA | 19.8nC @ 10V | ±12V | 839pF @ 15V | - | 1.15W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 30V 0.2A X2-DFN0606 |
82.836 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 200mA (Ta) | 1.2V, 10V | 5Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.35nC @ 4.5V | ±10V | 22.5pF @ 15V | - | 390mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN0606-3 | 3-XFDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 6A 6-TSOP-F |
25.494 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 32.5mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | +6V, -8V | 840pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | 6-TSOP-F | 6-SMD, Flat Leads |
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Central Semiconductor Corp |
MOSFET NCH 60V 0.3A SOT883 |
91.944 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 2.5V, 10V | 1.4Ohm @ 500mA, 10V | 2V @ 250µA | 0.5nC @ 4.5V | 20V | 50pF @ 25V | - | 100mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-883L | SC-101, SOT-883 |
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ON Semiconductor |
MOSFET P-CH 20V 1.3A SOT23 |
46.986 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 1.3A (Ta) | 2.5V, 4.5V | 220mOhm @ 750mA, 4.5V | 1.25V @ 250µA | 3.1nC @ 4V | ±12V | 225pF @ 5V | - | 400mW (Ta) | - | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 12V 3.2A DFN1010-3 |
24.588 |
|
- | N-Channel | MOSFET (Metal Oxide) | 12V | 3.2A (Ta) | 1.5V, 4.5V | 45mOhm @ 3.2A, 4.5V | 1V @ 250µA | 4.8nC @ 4.5V | ±8V | 375pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1010-3 | 3-XFDFN |
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Micro Commercial Co |
P-CHANNEL MOSFET, SOP-8 PACKAGE |
27.768 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 5.1A (Ta) | 10V | 105mOhm @ 2A, 4.5V | 2V @ 250µA | 40nC @ 10V | ±20V | - | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 0.034A SOT23 |
24.876 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 34mA (Ta) | 10V | 500Ohm @ 16mA, 10V | 4.1V @ 8µA | 0.15nC @ 10V | ±30V | 6pF @ 25V | - | 1.39W (Ta) | -50°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Central Semiconductor Corp |
MOSFET P-CH 20V 0.1A SOT883 |
75.564 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 8Ohm @ 10mA, 4V | 1.1V @ 250µA | 0.66nC @ 4.5V | 10V | 45pF @ 3V | - | 100mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-883VL | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 2A CST3B |
93.162 |
|
U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 40V | 2A (Ta) | 1.8V, 8V | 215mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | ±12V | 130pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | CST3B | 3-SMD, No Lead |
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Alpha & Omega Semiconductor |
MOSFET NCH 30V 10.5A DFN |
42.060 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 10.5A (Ta) | 4.5V, 10V | 17mOhm @ 9A, 10V | 2.4V @ 250µA | 25nC @ 10V | ±20V | 690pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (2.9x2.3) | 8-SMD, Flat Lead |
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Nexperia |
MOSFET P-CH 20V 2.5A |
22.836 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 1.8V, 4.5V | 102mOhm @ 2.5A, 4.5V | 900mV @ 250µA | 7.5nC @ 4.5V | ±12V | 550pF @ 10V | - | 490mW (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 30V SOT23 |
250.104 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 4.5A (Ta) | 4.5V, 10V | 36mOhm @ 4.5A, 10V | 2V @ 250µA | 6.3nC @ 10V | ±20V | 209pF @ 15V | - | 510mW (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |