Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 288/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE SCHOTTKY 40V 1A POWERMITE1 |
3.096 |
|
- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 60pF @ 5V, 1MHz | Surface Mount | DO-216AA | Powermite 1 (DO216-AA) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SBR 45V 12A POWERDI5SP |
7.074 |
|
SBR® | Super Barrier | 45V | 12A | 500mV @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 300µA @ 45V | - | Surface Mount | PowerDI™ 5SP | PowerDI5SP™ | -65°C ~ 150°C |
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Microsemi |
DIODE SCHOTTKY 200V 75A TO247 |
8.550 |
|
- | Schottky | 200V | 75A | 900mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 1mA @ 200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 20A TO263AB |
10.539 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 20A (DC) | 1.55V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 730pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 650V 41A TO220-2 |
162 |
|
- | Silicon Carbide Schottky | 650V | 41A (DC) | 1.35V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 67µA @ 420V | 970pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 60A TO247AC |
382 |
|
- | Standard | 1200V | 60A | 1.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 3.3KV 300MA DO214 |
2.466 |
|
- | Silicon Carbide Schottky | 3300V | 300mA (DC) | 2.2V @ 300mA | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 3300V | 42pF @ 1V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 70A DO203AB |
6.210 |
|
- | Standard | 1600V | 70A | 1.46V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | 4.5mA @ 1600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 80A TO247AC |
2 |
|
- | Standard | 1200V | 80A | 1.35V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 110A D-55 |
4.086 |
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- | Standard | 1000V | 110A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1000V | - | Chassis Mount | D-55 T-Module | D-55 | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 300A DO205AB |
90 |
|
- | Standard | 600V | 300A | 1.4V @ 942A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 600V | - | Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -65°C ~ 200°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 1.6KV 300A DO9 |
7.812 |
|
- | Standard | 1600V | 300A | 1.2V @ 300A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1600V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-9 | -60°C ~ 180°C |
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Micro Commercial Co |
DIODE GP 100V 150MA DFN1006-2 |
8.334 |
|
* | Standard | 100V | 150mA | 1.25V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 1.5pF @ 0V, 1MHz | Surface Mount | 0402 (1006 Metric) | DFN1006-2 | -65°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 75V 250MA SOD523 |
7.758 |
|
- | Standard | 75V | 250mA | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 2.5µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 300MA SOD80 |
8.766 |
|
Automotive, AEC-Q101 | Standard | 75V | 150mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 8ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Surface Mount | SOD-80 Variant | SOD-80 QuadroMELF | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 250MA DO35 |
6.480 |
|
- | Standard | 200V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 200V | 1.5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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Rohm Semiconductor |
RB511SM-30FH IS THE HIGH RELIABI |
4.158 |
|
Automotive, AEC-Q101 | Schottky | 30V | 100mA | 370mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 7µA @ 10V | - | Surface Mount | SC-79, SOD-523 | EMD2 | 125°C (Max) |
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SMC Diode Solutions |
DIODE GEN PURP 1KV 1A SMA |
5.922 |
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- | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 1000V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 150MA SOD323 |
6.300 |
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- | Standard | 75V | 150mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100µA @ 100V | - | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 200MA SOT23 |
2.736 |
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- | Standard | 100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA SOT23 |
2.628 |
|
- | Schottky | 30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 125°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 20V 500MA EMD2 |
7.632 |
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- | Schottky | 20V | 500mA | 530mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 20V | - | Surface Mount | SC-79, SOD-523 | EMD2 | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V DO35 |
2.754 |
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- | Schottky | 20V | - | 600mV @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 10ns | 5µA @ 10V | 50pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
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ON Semiconductor |
DIODE SCHOTTKY 40V 2A SOD123F |
5.220 |
|
Automotive, AEC-Q101 | Schottky | 40V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 9.495ns | 100µA @ 40V | - | Surface Mount | SOD-123F | SOD-123F | -55°C ~ 125°C |
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Micro Commercial Co |
DIODE SCHOTTKY 40V 1A DO41 |
7.938 |
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- | Schottky | 40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 10ns | 1mA @ 40V | 110pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 125°C |
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Nexperia |
DIODE SCHOTTKY 30V 500MA SOD123F |
3.598 |
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- | Schottky | 30V | 500mA (DC) | 430mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 30V | 70pF @ 1V, 1MHz | Surface Mount | SOD-123F | SOD-123F | 150°C (Max) |
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SMC Diode Solutions |
DIODE SCHOTTKY 200V 2A SMA |
5.472 |
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- | Schottky | 200V | 2A | 900mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 200V | 170pF @ 5V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 200MA SOD80 |
3.436 |
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- | Schottky | 40V | 200mA | 600mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | 10ns | 5µA @ 30V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD523 |
6.750 |
|
- | Schottky | 30V | 200mA | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | 125°C (Max) |
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ON Semiconductor |
DIODE SCHOTTKY 2A 40V SMA |
6.246 |
|
Automotive, AEC-Q101 | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 9.84ns | 200µA @ 40V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |