Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 290/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 5A DO214AB |
4.122 |
|
- | Standard | 100V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 100V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SBR 80V 20A POWERDI5 |
5.940 |
|
Automotive, AEC-Q101 | Super Barrier | 80V | 20A | 660mV @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 200µA @ 80V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 20A SLIMDPAK |
3.150 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 100V | 20A | 860mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | 1510pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SlimDPAK | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 4A DO214AB |
6.228 |
|
FRED Pt® | Standard | 600V | 4A | 1.85V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 3µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 40V 3A SMB |
7.848 |
|
Automotive, AEC-Q101 | Schottky | 40V | 3A | 630mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 40V | - | Surface Mount | DO-214AA, SMB | SMB | -40°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 50V 2.5A DO216 |
5.760 |
|
- | Standard | 50V | 2.5A | 975mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 50V | - | Surface Mount | DO-216AA | DO-216 | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 50V 6A DO214AB |
8.892 |
|
- | Standard | 50V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 150pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.5KV 2.5A DO201 |
7.938 |
|
Automotive, AEC-Q101 | Standard | 1500V | 2.5A | 1.6V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 20µs | 5µA @ 1500V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 50V 1A AXIAL |
3.780 |
|
- | Schottky | 50V | 1A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 40V 3A AXIAL |
8.298 |
|
- | Schottky | 40V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 40V | - | Through Hole | DO-201AA, DO-27, Axial | Axial | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 35A SLIMDPAK |
2.358 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 100V | 35A | 900mV @ 35A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 100V | 2500pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SlimDPAK | -40°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 45V 16A D2PAK |
4.662 |
|
SWITCHMODE™ | Schottky | 45V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 15V TO220AC |
7.452 |
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- | Schottky | 15V | - | 360mV @ 19A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10.5mA @ 15V | 2500pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 100°C |
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Microsemi |
DIODE GEN PURP 75V 200MA DO35 |
4.104 |
|
- | Standard | 75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 175°C |
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IXYS |
DIODE GEN PURP 600V 14A TO220AC |
8.388 |
|
- | Standard | 600V | 14A | 1.7V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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STMicroelectronics |
DIODE SILICON 650V 10A D2PAK |
469 |
|
- | Silicon Carbide Schottky | 650V | 10A | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 480pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | -40°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.6KV 30A TO220AC |
5.040 |
|
- | Standard | 1600V | 30A | 1.29V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 1600V | 10pF @ 400V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 30A TO220-2 |
2.646 |
|
- | Standard | 650V | 30A (DC) | 2.2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 42ns | 40µA @ 650V | - | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -40°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 1.2KV 30A TO220AC |
7.560 |
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- | Standard | 1200V | 30A | 3.2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 250µA @ 1200V | - | Through Hole | TO-220-2 | TO-220-2L | -65°C ~ 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 6A TO263AB |
4.377 |
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Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 6A (DC) | 1.55V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 600V | 219pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
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IXYS |
DIODE GEN PURP 600V 37A TO247AD |
7.884 |
|
- | Standard | 600V | 37A | 1.6V @ 37A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
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STMicroelectronics |
DIODE SCHOTTKY 1.2KV 10A D2PAK |
4.804 |
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Automotive, AEC-Q101, ECOPACK®2 | Silicon Carbide Schottky | 1200V | 10A | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 1200V | 725pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | -40°C ~ 175°C |
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Microsemi |
DIODE SCHOTTKY 200V 45A TO247 |
3.436 |
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- | Schottky | 200V | 45A | 850mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 500µA @ 200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 1.2KV 5A TO220-2 |
3.029 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 33µA @ 1200V | 301pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
6.948 |
|
- | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
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Microsemi |
DIODE GEN PURP 1KV 60A TO247 |
5.670 |
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- | Standard | 1000V | 60A | 2.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 280ns | 250µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 100V 3A B-MELF |
8.136 |
|
- | Standard | 100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 70A D-55 |
7.091 |
|
- | Standard | 400V | 70A | - | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 400V | - | Chassis Mount | D-55 T-Module | D-55 | - |
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IXYS |
DIODE AVALANCHE 1.8KV 110A DO203 |
5.418 |
|
- | Avalanche | 1800V | 110A | 1.17V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 6mA @ 1800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 85A D-55 |
3.006 |
|
- | Standard | 1000V | 85A | - | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 20mA @ 1000V | - | Chassis Mount | D-55 T-Module | D-55 | - |