Gleichrichter - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Filter anzeigen
Filter zurücksetzen
Filter anwenden
KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 240/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 10A TO263AB |
3.422 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 10A (DC) | 1.55V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 365pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
|
|
|
ON Semiconductor |
650V 10A SIC SBD GEN1.5 |
7.902 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 13.5A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 424pF @ 1V, 100kHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | -55°C ~ 175°C |
|
|
|
Semtech |
DIODE GEN PURP 800V 3A AXIAL |
2.502 |
|
- | Standard | 800V | 5A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | 92pF @ 5V, 1MHz | Through Hole | Axial | Axial | - |
|
|
|
Semtech |
DIODE GEN PURP 600V 5A AXIAL |
5.634 |
|
- | Standard | 600V | 5A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | 92pF @ 5V, 1MHz | Through Hole | Axial | Axial | - |
|
|
|
Semtech |
DIODE GEN PURP 1KV 5A AXIAL |
3.562 |
|
- | Standard | 1000V | 5A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | 92pF @ 5V, 1MHz | Through Hole | Axial | Axial | - |
|
|
|
Semtech |
DIODE GEN PURP 400V 3A AXIAL |
6.462 |
|
- | Standard | 400V | 5A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | 92pF @ 5V, 1MHz | Through Hole | Axial | Axial | - |
|
|
|
GeneSiC Semiconductor |
SIC DIODE 1200V 5A TO-252-2 |
6.858 |
|
- | Silicon Carbide Schottky | 1200V | 27A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 4µA @ 1200V | 359pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 1.2KV 10A TO220 |
19.176 |
|
- | Silicon Carbide Schottky | 1200V | 10A | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-220-2 | TO-220 [K] | - |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 1.2KV TO252 |
3.204 |
|
- | Silicon Carbide Schottky | 1200V | - | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 612pF @ 1V, 100kHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | - |
|
|
|
IXYS |
DIODE AVALANCHE 1600V 3.6A AXIAL |
19.044 |
|
- | Avalanche | 1600V | 3.6A | 1.25V @ 7A | Standard Recovery >500ns, > 200mA (Io) | - | 2mA @ 1600V | - | Through Hole | Axial | Axial | -40°C ~ 180°C |
|
|
|
Littelfuse |
DIODE GEN PURP 1.2KV 75A TO247AC |
6.432 |
|
DUR | Standard | 1200V | 75A | 3.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 650µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC | -55°C ~ 150°C |
|
|
|
Littelfuse |
DIODE SCHOTTKY 1.2KV 33A TO252 |
8.460 |
|
Gen2 | Silicon Carbide Schottky | 1200V | 33A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 582pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 175°C |
|
|
|
Littelfuse |
SCHOTTKY DIODE SIC 1200V 10A |
7.866 |
|
Gen2 | Silicon Carbide Schottky | 1200V | 28A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 582pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2L | -55°C ~ 175°C |
|
|
|
SMC Diode Solutions |
SIC SCHOTTKY RECTIFIER |
6.318 |
|
- | Silicon Carbide Schottky | 650V | 12A | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 650V | 750pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 125V 150MA DO35 |
8.328 |
|
Military, MIL-PRF-19500/241 | Standard | 125V | 150mA | 920mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 1nA @ 125V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 30A SIC SBD GEN1.5 |
5.598 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 73A (DC) | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 1280pF @ 1V, 100kHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK-3 (TO-263) | -55°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 12A TO263AB |
4.970 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 12A (DC) | 1.55V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 600V | 438pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODES AND RECTIFIERS |
4.218 |
|
Automotive, AEC-Q101, ECOPACK®2 | Silicon Carbide Schottky | 650V | 20A | 1.45V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 600V | 1250pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
13.272 |
|
Military, MIL-PRF-19500/429 | Standard | 400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
6.642 |
|
Military, MIL-PRF-19500/427 | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 50V 6A DO4 |
14.388 |
|
- | Standard | 50V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODES SILICON CARBIDE |
4.914 |
|
- | Silicon Carbide Schottky | 650V | 20A (DC) | 1.5V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 1000pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTL | 175°C (Max) |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 20A TO263AB |
1.150 |
|
- | Silicon Carbide Schottky | 650V | 20A | 1.55V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 730pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
5.304 |
|
Military, MIL-PRF-19500/359 | Standard | 200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 15A TO263AB |
7.485 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 15A (DC) | 1.55V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 600V | 550pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
8.616 |
|
Military, MIL-PRF-19500/429 | Standard | 400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 35pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
SIC DIODE 1200V 8A TO-252-2 |
7.218 |
|
- | Silicon Carbide Schottky | 1200V | 40A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 7µA @ 1200V | 545pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
13.542 |
|
Military, MIL-PRF-19500/429 | Standard | 200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | Through Hole | A, Axial | A-PAK | -65°C ~ 175°C |
|
|
|
Sanken |
DIODE SCHOTTKY 600V 20A TO220-2 |
8.532 |
|
- | Silicon Carbide Schottky | 600V | 20A | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 15mA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F | -40°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
SIC DIODE 1200V 10A TO-252-2 |
8.676 |
|
- | Silicon Carbide Schottky | 1200V | 50A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1200V | 660pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |