Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 243/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Power Integrations |
DIODE GEN PURP 300V 16A TO220AC |
14.040 |
|
Qspeed™ | Standard | 300V | 16A | 1.9V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 13ns | 25µA @ 300V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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IXYS |
DIODE GEN PURP 600V 8A TO220AC |
19.752 |
|
FRED | Standard | 600V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 20µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 20A TO220AC |
9.804 |
|
TMBS® | Schottky | 45V | 20A (DC) | 660mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | 200°C (Max) |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 3A TO220-2 |
16.104 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 11A (DC) | 1.7V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 155pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 25V 10A TO220AC |
6.174 |
|
- | Schottky | 25V | 10A | 460mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 25V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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Microsemi |
DIODE GEN PURP 225V 400MA DO35 |
9.672 |
|
- | Standard | 225V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 250V 40A TO220-2 |
591 |
|
SWITCHMODE™ | Schottky | 250V | 40A | 970mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 30µA @ 250V | 500pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A TO220FP |
9.468 |
|
FRED Pt® | Standard | 600V | 15A | 3.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 50µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 30A TO220AC |
14.256 |
|
- | Standard | 600V | 30A | 1.5V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 250µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 4A TO252AA |
20.100 |
|
HEXFRED® | Standard | 600V | 4A | 1.8V @ 4A | - | - | 3µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO220FP |
8.982 |
|
FRED Pt® | Standard | 600V | 30A | 2.65V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 26ns | 30µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -65°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.2KV 15A TO220AC |
18.504 |
|
HiPerFRED™ | Standard | 1200V | 15A | 2.75V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 15V 25A D2PAK |
8.460 |
|
SWITCHMODE™ | Schottky | 15V | 25A | 450mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 15mA @ 15V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 100°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 650V 60A TO220-2 |
8.604 |
|
- | Standard | 650V | 60A (DC) | 1.7V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 64ns | 40µA @ 650V | - | Through Hole | TO-220-2 | PG-TO220-2-1 | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO263AB |
8.052 |
|
- | Standard | 1200V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
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Littelfuse |
DIODE GEN PURP 800V 12.7A TO220 |
5.616 |
|
- | Standard | 800V | 12.7A | - | Standard Recovery >500ns, > 200mA (Io) | 4µs | 20µA @ 800V | - | Through Hole | TO-220-3 Isolated Tab | TO-220AB-L | -40°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE FRED 1.2KV 16A TO220AC |
7.248 |
|
HEXFRED® | Standard | 1200V | 16A (DC) | 3.93V @ 32A | Fast Recovery =< 500ns, > 200mA (Io) | 135ns | 20µA @ 1.2kV | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 1.2KV 30A TO247 |
7.608 |
|
- | Standard | 1200V | 30A | 3.2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 250µA @ 1200V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 60A TO247AD |
16.608 |
|
FRED Pt® | Standard | 600V | 60A | 1.7V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 74ns | 50µA @ 600V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 30A DO247 |
8.748 |
|
- | Standard | 1200V | 30A | 1.3V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 2µA @ 1200V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 600V 30A TO247 |
17.700 |
|
Stealth™ | Standard | 600V | 30A | 2.4V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 30A TO247 |
54.498 |
|
- | Standard | 600V | 30A | 1.5V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 1KV 12A TO220AC |
19.416 |
|
- | Standard | 1000V | 12A | 2V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 10µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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IXYS |
DIODE GEN PURP 600V 30A TO220AC |
3.026 |
|
HiPerFRED™ | Standard | 600V | 30A | 1.61V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 250µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 600V 37A TO263AB |
8.676 |
|
FRED | Standard | 600V | 37A | 1.6V @ 37A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -40°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 15A D2PAK |
18.732 |
|
- | Standard | 1200V | 15A | 2.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 105ns | 15µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 600V 50A TO247 |
10.848 |
|
- | Standard | 600V | 50A | 2.1V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 8A TO252AA |
16.032 |
|
- | Standard | 800V | 8A | 1.1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 800V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 30V 40A D2PAK |
7.290 |
|
SWITCHMODE™ | Schottky | 30V | 40A | 550mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350µA @ 30V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 50A TO220-2 |
7.932 |
|
- | Standard | 1200V | 50A (DC) | 2.15V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 243ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 150°C |