Renesas Electronics America Inc. PMIC - Gate-Treiber
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KategorieHalbleiter / Energieverwaltungs-ICs / PMIC - Gate-Treiber
HerstellerRenesas Electronics America Inc.
Datensätze 817
Seite 28/28
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Serie | Angetriebene Konfiguration | Kanaltyp | Anzahl der Treiber | Gate-Typ | Spannung - Versorgung | Logikspannung - VIL, VIH | Strom - Spitzenleistung (Quelle, Senke) | Eingabetyp | High Side Voltage - Max (Bootstrap) | Anstiegs- / Abfallzeit (Typ) | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 9TDFN |
5.508 |
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- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 9-WDFN Exposed Pad | 9-TDFN (4x4) |
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Renesas Electronics America Inc. |
IC MOSFET DRVR SYNCH RECT 8SOIC |
6.786 |
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- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 5.5V | 1V, 2V | 2A, 2A | Non-Inverting | 33V | 8ns, 8ns | 0°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics America Inc. |
IC MOSFET DRVR SYNCH RECT 8QFN |
4.410 |
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- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 5.5V | 1V, 2V | 2A, 2A | Non-Inverting | 33V | 8ns, 8ns | 0°C ~ 125°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | 8-QFN (3x3) |
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Renesas Electronics America Inc. |
IC DRVR HALF BRIDGE 10DFN |
3.780 |
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Automotive, AEC-Q100 | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8V ~ 14V | 1.8V, 4V | 2A, 2A | Non-Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-TDFN (4x4) |
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Renesas Electronics America Inc. |
IC DRVR HALF BRIDGE 9DFN |
4.518 |
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Automotive, AEC-Q100 | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8V ~ 14V | 1.8V, 4V | 2A, 2A | Non-Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 9-WDFN Exposed Pad | 9-TDFN (4x4) |
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Renesas Electronics America Inc. |
IC DRVR HALF BRIDGE 9DFN |
6.714 |
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Automotive, AEC-Q100 | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8V ~ 14V | 1.8V, 4V | 2A, 2A | Non-Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 9-WDFN Exposed Pad | 9-TDFN (4x4) |
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Renesas Electronics America Inc. |
IC FET DVR H BRIDGE 16SOIC |
4.860 |
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- | Half-Bridge | Independent | 4 | N-Channel MOSFET | 8.5V ~ 15V | 1V, 2.5V | 1.4A, 1.3A | Non-Inverting | 95V | 9ns, 9ns | -55°C ~ 125°C (TJ) | - | - | - |