Renesas Electronics America Inc. PMIC - Gate-Treiber
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KategorieHalbleiter / Energieverwaltungs-ICs / PMIC - Gate-Treiber
HerstellerRenesas Electronics America Inc.
Datensätze 817
Seite 25/28
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Angetriebene Konfiguration | Kanaltyp | Anzahl der Treiber | Gate-Typ | Spannung - Versorgung | Logikspannung - VIL, VIH | Strom - Spitzenleistung (Quelle, Senke) | Eingabetyp | High Side Voltage - Max (Bootstrap) | Anstiegs- / Abfallzeit (Typ) | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
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Renesas Electronics America Inc. |
IC MOSFET DRVR SYNC HF 6A 10-DFN |
3.510 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 6.8V ~ 13.2V | - | 2.5A, 4A | Non-Inverting | 36V | 13ns, 10ns | 0°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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Renesas Electronics America Inc. |
IC DRVR DUAL SYNC BUCK 16-QFN |
3.168 |
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- | Half-Bridge | Synchronous | 4 | N-Channel MOSFET | 10.8V ~ 13.2V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 16-VQFN Exposed Pad | 16-QFN (4x4) |
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Renesas Electronics America Inc. |
IC DRVR DUAL SYNC BUCK 16-QFN |
3.024 |
|
- | Half-Bridge | Synchronous | 4 | N-Channel MOSFET | 10.8V ~ 13.2V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 16-VQFN Exposed Pad | 16-QFN (4x4) |
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Renesas Electronics America Inc. |
IC DRVR DUAL SYNC BUCK 16-QFN |
3.636 |
|
- | Half-Bridge | Synchronous | 4 | N-Channel MOSFET | 10.8V ~ 13.2V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 16-VQFN Exposed Pad | 16-QFN (4x4) |
|
|
Renesas Electronics America Inc. |
IC DRVR DUAL SYNC BUCK 16-QFN |
6.876 |
|
- | Half-Bridge | Synchronous | 4 | N-Channel MOSFET | 10.8V ~ 13.2V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 16-VQFN Exposed Pad | 16-QFN (4x4) |
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Renesas Electronics America Inc. |
IC MOSFET DRVR SYNC HF 6A 10-DFN |
8.820 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 6.8V ~ 13.2V | - | 2.5A, 4A | Non-Inverting | 36V | 13ns, 10ns | 0°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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Renesas Electronics America Inc. |
IC DRVR MOSFET DUAL-CH 8DIP |
7.488 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 2A, 2A | Inverting | - | 7.5ns, 10ns | -40°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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|
Renesas Electronics America Inc. |
IC DRVR MOSFET DUAL-CH 8DIP |
3.562 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 10ns | -40°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Renesas Electronics America Inc. |
IC DRVR MOSFET DUAL-CH 8DIP |
6.336 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 2A, 2A | Non-Inverting | - | 7.5ns, 10ns | -40°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Renesas Electronics America Inc. |
IC DRVR H-BRDG 100V 1.25A 8SOIC |
5.058 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9V ~ 14V | 3.7V, 7.4V | 1.25A, 1.25A | Non-Inverting | 100V | 16ns, 16ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics America Inc. |
IC DRVR H-BRDG 100V 1.25A 8SOIC |
4.878 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9V ~ 14V | 3.7V, 7.4V | 1.25A, 1.25A | Non-Inverting | 100V | 16ns, 16ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics America Inc. |
IC DRVR H-BRDG 100V 1.25A 8SOIC |
3.580 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9V ~ 14V | 1.4V, 2.2V | 1.25A, 1.25A | Non-Inverting | 100V | 16ns, 16ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics America Inc. |
IC MOSFET DVR SYNC BUCK 10-DFN |
3.438 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10.8V ~ 13.2V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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Renesas Electronics America Inc. |
IC DVR MOSFET DUAL-CH 8DIP |
6.012 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 2A, 2A | Non-Inverting | - | 7.5ns, 10ns | -40°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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|
Renesas Electronics America Inc. |
IC DVR MOSFET DUAL-CH 8DIP |
6.030 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 10ns | -40°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Renesas Electronics America Inc. |
IC MOSFET DRIVER SGL 10DFN |
2.790 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5V ~ 7.5V | 1.7V, 3.4V | 3.2A, 3.2A | Non-Inverting | 30V | 5.3ns, 4.8ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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Renesas Electronics America Inc. |
IC MOSFET DRIVER SGL 10DFN |
6.012 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5V ~ 7.5V | 1.7V, 3.4V | 3.2A, 3.2A | Non-Inverting | 30V | 5.3ns, 4.8ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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Renesas Electronics America Inc. |
MOSFET DRIVER 2CH 6A 8SOIC |
6.948 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 7.5V ~ 16V | 2.4V, 9.6V | 6A, 6A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Renesas Electronics America Inc. |
MOSFET DRIVER 2CH 6A 8SOIC |
4.266 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 7.5V ~ 16V | 2.4V, 9.6V | 6A, 6A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Renesas Electronics America Inc. |
MOSFET DRIVER 2CH 6A 8TDFN |
6.444 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 7.5V ~ 16V | 2.4V, 9.6V | 6A, 6A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-WFDFN Exposed Pad | 8-TDFN (3x3) |
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Renesas Electronics America Inc. |
MOSFET DRIVER 2CH 6A 8TDFN |
7.938 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 7.5V ~ 16V | 2.4V, 9.6V | 6A, 6A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-WFDFN Exposed Pad | 8-TDFN (3x3) |
|
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Renesas Electronics America Inc. |
MOSFET DRIVER 2CH 6A 8SOIC |
5.940 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 7.5V ~ 16V | 2.4V, 9.6V | 6A, 6A | Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
|
Renesas Electronics America Inc. |
MOSFET DRIVER 2CH 6A 8SOIC |
2.988 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 7.5V ~ 16V | 2.4V, 9.6V | 6A, 6A | Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
|
Renesas Electronics America Inc. |
MOSFET DRIVER 2CH 6A 8TDFN |
4.392 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 7.5V ~ 16V | 2.4V, 9.6V | 6A, 6A | Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-VFDFN Exposed Pad | 8-TDFN (3x3) |
|
|
Renesas Electronics America Inc. |
MOSFET DRIVER 2CH 6A 8TDFN |
7.128 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 7.5V ~ 16V | 2.4V, 9.6V | 6A, 6A | Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-VFDFN Exposed Pad | 8-TDFN (3x3) |
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Renesas Electronics America Inc. |
MOSFET DRIVER 2CH 6A 8SOIC |
7.434 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 7.5V ~ 16V | 2.4V, 9.6V | 6A, 6A | Inverting, Non-Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
|
Renesas Electronics America Inc. |
MOSFET DRIVER 2CH 6A 8SOIC |
2.394 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 7.5V ~ 16V | 2.4V, 9.6V | 6A, 6A | Inverting, Non-Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
|
Renesas Electronics America Inc. |
MOSFET DRIVER 2CH 6A 8TDFN |
2.718 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 7.5V ~ 16V | 2.4V, 9.6V | 6A, 6A | Inverting, Non-Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-VFDFN Exposed Pad | 8-SOIC-EP |
|
|
Renesas Electronics America Inc. |
MOSFET DRIVER 2CH 6A 8TDFN |
7.020 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 7.5V ~ 16V | 2.4V, 9.6V | 6A, 6A | Inverting, Non-Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-VFDFN Exposed Pad | 8-SOIC-EP |
|
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Renesas Electronics America Inc. |
IC DVR HALF-BRDGE HI FREQ 8SOIC |
5.454 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9V ~ 14V | 3.7V, 7.4V | 2A, 2A | Non-Inverting | 114V | 10ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |