IXYS Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerIXYS
Datensätze 2.184
Seite 2/73
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Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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IXYS |
MOSFET N-CH 75V 500A |
22.440 |
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GigaMOS™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 500A (Tc) | 10V | 1.6mOhm @ 100A, 10V | 5V @ 8mA | 545nC @ 10V | ±20V | 41000pF @ 25V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 24-SMPD | 24-PowerSMD, 21 Leads |
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IXYS |
MOSFET N-CH 500V 48A PLUS247 |
6.564 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 48A (Tc) | 10V | 100mOhm @ 24A, 10V | 4V @ 4mA | 190nC @ 10V | ±20V | 7000pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 650V 120A PLUS247 |
18.300 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 120A (Tc) | 10V | 24mOhm @ 60A, 10V | 5.5V @ 8mA | 225nC @ 10V | ±30V | 15500pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 230A PLUS247 |
18.504 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 230A (Tc) | 10V | 7.5mOhm @ 60A, 10V | 5V @ 8mA | 378nC @ 10V | ±20V | 28000pF @ 25V | - | 1670W (Tc) | - | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 230A TO-264 |
8.892 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 230A (Tc) | 10V | 7.5mOhm @ 60A, 10V | 5V @ 8mA | 378nC @ 10V | ±20V | 28000pF @ 25V | - | 1670W (Tc) | - | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 100V 360A SOT-227B |
1.567 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 360A (Tc) | 10V | 2.6mOhm @ 180A, 10V | 4.5V @ 250µA | 505nC @ 10V | ±20V | 36000pF @ 25V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 150V 360A TO264 |
10.464 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 360A (Tc) | 10V | 4mOhm @ 60A, 10V | 5V @ 8mA | 715nC @ 10V | ±20V | 47500pF @ 25V | - | 1670W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 800V 60A PLUS264 |
7.956 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 60A (Tc) | 10V | 140mOhm @ 30A, 10V | 5V @ 8mA | 250nC @ 10V | ±30V | 18000pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS264™ | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 300V 130A SOT227 |
6.576 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 300V | 130A (Tc) | 10V | 19mOhm @ 60A, 10V | 5V @ 8mA | 335nC @ 10V | ±20V | 28000pF @ 25V | - | 900W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 4500V 0.2A TO268 |
19.608 |
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- | N-Channel | MOSFET (Metal Oxide) | 4500V | 200mA (Tc) | 10V | 750Ohm @ 10mA, 10V | 6.5V @ 250µA | 10.4nC @ 10V | ±20V | 256pF @ 25V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 250V 240A PLUS247-3 |
13.074 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 240A (Tc) | 10V | 5mOhm @ 120A, 10V | 4.5V @ 8mA | 345nC @ 10V | ±20V | 23800pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
200V/300A ULTRA JUNCTION X3-CLAS |
11.124 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 300A (Tc) | 10V | 4mOhm @ 150A, 10V | 4.5V @ 8mA | 375nC @ 10V | ±20V | 23800pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 75V 480A SOT227 |
6.396 |
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GigaMOS™, HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 480A (Tc) | 10V | 1.9mOhm @ 100A, 10V | 5V @ 8mA | 545nC @ 10V | ±20V | 41000pF @ 25V | - | 940W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 500V 48A SOT-227B |
12.852 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 48A (Tc) | 10V | 100mOhm @ 500mA, 10V | 4V @ 8mA | 270nC @ 10V | ±20V | 8400pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 200V 106A SOT-227B |
6.792 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 106A (Tc) | 10V | 20mOhm @ 500mA, 10V | 4V @ 8mA | 380nC @ 10V | ±20V | 9000pF @ 25V | - | 521W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET P-CH 100V 170A SOT227 |
7.896 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 170A (Tc) | 10V | 12mOhm @ 500mA, 10V | 4V @ 1mA | 240nC @ 10V | ±20V | 12600pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 70V 200A SOT-227B |
7.200 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 70V | 200A (Tc) | 10V | 6mOhm @ 500mA, 10V | 4V @ 8mA | 480nC @ 10V | ±20V | 9000pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 200V 220A SOT-227 |
7.032 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 220A (Tc) | 10V | 7.5mOhm @ 60A, 10V | 5V @ 8mA | 378nC @ 10V | ±20V | 28000pF @ 25V | - | 1090W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 800V 53A SOT-227B |
87 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 800V | 53A (Tc) | 10V | 140mOhm @ 30A, 10V | 5V @ 8mA | 250nC @ 10V | ±30V | 18000pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 500V 53A SOT-227 |
18.744 |
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Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 53A (Tc) | 10V | 100mOhm @ 30A, 10V | 4.5V @ 250µA | 610nC @ 10V | ±30V | 24000pF @ 25V | - | 735W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 100V 178A SOT-227 |
7.620 |
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Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 100V | 178A (Tc) | 10V | 11mOhm @ 100A, 10V | 4.5V @ 3mA | 540nC @ 10V | ±20V | 23000pF @ 25V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 4500V 0.9A I4PAK |
7.246 |
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- | N-Channel | MOSFET (Metal Oxide) | 4500V | 900mA (Tc) | 10V | 85Ohm @ 50mA, 10V | 6.5V @ 250µA | 40nC @ 10V | ±20V | 1730pF @ 25V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS i4-PAC™ | i4-Pac™-5 (3 Leads) |
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IXYS |
2000V TO 3000V POLAR3 POWER MOSF |
7.224 |
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- | N-Channel | MOSFET (Metal Oxide) | 3000V | 4A (Tc) | 10V | 12.5Ohm @ 2A, 10V | 5V @ 250µA | 139nC @ 10V | ±20V | 3680pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247PLUS-HV | TO-247-3 Variant |
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IXYS |
MOSFET N-CH 4500V 2A I5PAK |
1.710 |
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- | N-Channel | MOSFET (Metal Oxide) | 4500V | 2A (Tc) | 10V | 23Ohm @ 1A, 10V | 6V @ 250µA | 156nC @ 10V | ±20V | 6900pF @ 25V | - | 220W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUSi5-Pak™ | ISOPLUSi5-Pak™ |
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IXYS |
MOSFET N-CH 200V 580A MODULE |
5.886 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 580A (Tc) | 10V | 3.8mOhm @ 430A, 10V | 4V @ 50mA | 2750nC @ 10V | ±20V | - | - | - | -40°C ~ 150°C (TJ) | Chassis Mount | Y3-Li | Y3-Li |
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IXYS |
MOSFET P-CH 100V 18A TO-220 |
14.598 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 18A (Tc) | 10V | 120mOhm @ 9A, 10V | 4.5V @ 250µA | 39nC @ 10V | ±15V | 2100pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 1000V 800MA DPAK |
22.500 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 800mA (Tc) | - | 21Ohm @ 400mA, 0V | - | 14.6nC @ 5V | ±20V | 325pF @ 25V | Depletion Mode | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 500V 3A D2PAK |
7.992 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 3A (Tc) | - | 1.5Ohm @ 1.5A, 0V | - | 40nC @ 5V | ±20V | 1070pF @ 25V | Depletion Mode | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
300V/26A ULTRA JUNCTION X3-CLASS |
15.096 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 26A (Tc) | 10V | 66mOhm @ 13A, 10V | 4.5V @ 500µA | 22nC @ 10V | ±20V | 1.465nF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
200V/36A ULTRA JUNCTION X3-CLASS |
9.444 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 36A (Tc) | 10V | 45mOhm @ 18A, 10V | 4.5V @ 500µA | 21nC @ 10V | ±20V | 1425pF @ 25V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |