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Infineon Technologies Transistoren - FETs, MOSFETs - Single

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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 64/225
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
FET-Typ
Technologie
Drain to Source Voltage (Vdss)
Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.
Antriebsspannung (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs (th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Eingangskapazität (Ciss) (Max) @ Vds
FET-Funktion
Verlustleistung (max.)
Betriebstemperatur
Montagetyp
Lieferantengerätepaket
Paket / Fall
BSC061N08NS5ATMA1
Infineon Technologies
MOSFET N-CH 80V 82A 8TDSON
4.482
OptiMOS™
N-Channel
MOSFET (Metal Oxide)
80V
82A (Tc)
6V, 10V
6.1mOhm @ 41A, 10V
3.8V @ 41µA
33nC @ 10V
±20V
2500pF @ 40V
-
2.5W (Ta), 74W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
IPD12CN10NGATMA1
Infineon Technologies
MOSFET N-CH 100V 67A TO252-3
6.426
OptiMOS™
N-Channel
MOSFET (Metal Oxide)
100V
67A (Tc)
10V
12.4mOhm @ 67A, 10V
4V @ 83µA
65nC @ 10V
±20V
4320pF @ 50V
-
125W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
BSC010N04LS6ATMA1
Infineon Technologies
TRENCH <= 40V
3.510
OptiMOS™
N-Channel
MOSFET (Metal Oxide)
40V
40A (Ta), 100A (Tc)
4.5V, 10V
1mOhm @ 50A, 10V
2.3V @ 250µA
67nC @ 4.5V
±20V
4600pF @ 20V
-
3W (Ta), 150W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
IPL60R285P7AUMA1
Infineon Technologies
MOSFET N-CH 600V 4VSON
6.588
CoolMOS™ P7
N-Channel
MOSFET (Metal Oxide)
650V
13A (Tc)
10V
285mOhm @ 3.8A, 10V
4V @ 190µA
18nC @ 10V
±20V
761pF @ 400V
-
59W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-VSON-4
4-PowerTSFN
IAUA200N04S5N010AUMA1
Infineon Technologies
MOSFET_(20V 40V)
3.330
Automotive, AEC-Q101, OptiMOS™-5
N-Channel
MOSFET (Metal Oxide)
40V
200A (Tc)
7V, 10V
1mOhm @ 100A, 10V
3.4V @ 100µA
132nC @ 10V
±20V
7650pF @ 25V
-
167W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-5-1
5-PowerSFN
IPA086N10N3GXKSA1
Infineon Technologies
MOSFET N-CH 100V 45A TO220-FP
7.650
OptiMOS™
N-Channel
MOSFET (Metal Oxide)
100V
45A (Tc)
6V, 10V
8.6mOhm @ 45A, 10V
3.5V @ 75µA
55nC @ 10V
±20V
3980pF @ 50V
-
37.5W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
IPL60R125P7AUMA1
Infineon Technologies
MOSFET N-CH 4VSON
5.076
CoolMOS™ P7
N-Channel
MOSFET (Metal Oxide)
650V
27A (Tc)
10V
125mOhm @ 8.2A, 10V
4V @ 410µA
36nC @ 10V
±20V
1544pF @ 400V
-
111W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-VSON-4
4-PowerTSFN
IPAN80R360P7XKSA1
Infineon Technologies
MOSFET N-CHANNEL 800V 13A TO220
5.868
CoolMOS™ P7
N-Channel
MOSFET (Metal Oxide)
800V
13A (Tc)
10V
360mOhm @ 5.6A, 10V
3.5V @ 280µA
30nC @ 10V
±20V
930pF @ 500V
-
30W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220 Full Pack
TO-220-3 Full Pack
IPB032N10N5ATMA1
Infineon Technologies
MOSFET N-CH 100V 166A TO263-7
5.454
OptiMOS™
N-Channel
MOSFET (Metal Oxide)
100V
166A (Tc)
6V, 10V
3.2mOhm @ 83A, 10V
3.8V @ 125µA
95nC @ 10V
±20V
6970pF @ 50V
-
187W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
IPP65R150CFDXKSA2
Infineon Technologies
HIGH POWER_LEGACY
2.700
CoolMOS™ CFD2
N-Channel
MOSFET (Metal Oxide)
650V
22.4A (Tc)
10V
150mOhm @ 9.3A, 10V
4.5V @ 900µA
86nC @ 10V
±20V
2340pF @ 100V
-
195.3W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IPA60R125CFD7XKSA1
Infineon Technologies
HIGH POWER_NEW
5.346
OptiMOS™
N-Channel
MOSFET (Metal Oxide)
600V
11A (Tc)
10V
125mOhm @ 7.8A, 10V
4.5V @ 390µA
36nC @ 10V
±20V
1503pF @ 400V
-
32W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220 Full Pack
TO-220-3 Full Pack
IPW65R150CFDFKSA1
Infineon Technologies
MOSFET N-CH 650V TO247
7.632
CoolMOS™
N-Channel
MOSFET (Metal Oxide)
650V
22.4A (Tc)
10V
150mOhm @ 9.3A, 10V
4.5V @ 900µA
86nC @ 10V
±20V
2340pF @ 100V
-
195.3W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
IPI076N15N5AKSA1
Infineon Technologies
MV POWER MOS
7.578
*
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPP076N15N5AKSA1
Infineon Technologies
MV POWER MOS
6.066
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
-
-
IMW120R350M1HXKSA1
Infineon Technologies
COOLSIC MOSFETS 1200V
7.776
CoolSiC™
N-Channel
SiC (Silicon Carbide Junction Transistor)
1.2kV
4.7A (Tc)
15V, 18V
455mOhm @ 2A, 18V
5.7V @ 1mA
5.3nC @ 18V
+23V, -7V
182pF @ 800V
-
60W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
IMZ120R350M1HXKSA1
Infineon Technologies
COOLSIC MOSFETS 1200V
4.986
CoolSiC™
N-Channel
SiC (Silicon Carbide Junction Transistor)
1.2kV
4.7A (Tc)
15V, 18V
350mOhm @ 2A, 18V
5.7V @ 1mA
5.3nC @ 18V
+23V, -7V
182pF @ 800V
-
60W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-1
TO-247-4
IMW120R220M1HXKSA1
Infineon Technologies
COOLSIC MOSFETS 1200V
3.042
CoolSiC™
N-Channel
SiC (Silicon Carbide Junction Transistor)
1.2kV
13A (Tc)
15V, 18V
286mOhm @ 4A, 18V
5.7V @ 1.6mA
8.5nC @ 18V
+23V, -7V
289pF @ 800V
-
75W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
IMZ120R220M1HXKSA1
Infineon Technologies
COOLSIC MOSFETS 1200V
6.822
CoolSiC™
N-Channel
SiC (Silicon Carbide Junction Transistor)
1.2kV
13A (Tc)
15V, 18V
220mOhm @ 4A, 18V
5.7V @ 1.6mA
8.5nC @ 18V
+23V, -7V
289pF @ 800V
-
75W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-1
TO-247-4
IMW120R140M1HXKSA1
Infineon Technologies
COOLSIC MOSFETS 1200V
7.452
CoolSiC™
N-Channel
SiC (Silicon Carbide Junction Transistor)
1.2kV
19A (Tc)
15V, 18V
182mOhm @ 6A, 18V
5.7V @ 2.5mA
13nC @ 18V
+23V, -7V
454pF @ 800V
-
94W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
IMZ120R140M1HXKSA1
Infineon Technologies
COOLSIC MOSFETS 1200V
8.946
CoolSiC™
N-Channel
SiC (Silicon Carbide Junction Transistor)
1.2kV
19A (Tc)
15V, 18V
182mOhm @ 6A, 18V
5.7V @ 2.5mA
13nC @ 18V
+23V, -7V
454pF @ 800V
-
94W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-1
TO-247-4
IMW120R090M1HXKSA1
Infineon Technologies
COOLSIC MOSFETS 1200V
2.394
CoolSiC™
N-Channel
SiC (Silicon Carbide Junction Transistor)
1.2kV
26A (Tc)
15V, 18V
117mOhm @ 8.5A, 18V
5.7V @ 3.7mA
21nC @ 18V
+23V, -7V
707pF @ 800V
-
115W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
IGLD60R070D1AUMA1
Infineon Technologies
IC GAN FET 600V 60A 8SON
3.690
CoolGaN™
N-Channel
GaNFET (Gallium Nitride)
600V
15A (Tc)
-
-
1.6V @ 2.6mA
-
-10V
380pF @ 400V
-
114W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-LSON-8-1
8-LDFN Exposed Pad
IMZ120R090M1HXKSA1
Infineon Technologies
COOLSIC MOSFETS 1200V
2.322
CoolSiC™
N-Channel
SiC (Silicon Carbide Junction Transistor)
1.2kV
26A (Tc)
15V, 18V
117mOhm @ 8.5A, 18V
5.7V @ 3.7mA
21nC @ 18V
+23V, -7V
707pF @ 800V
-
115W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-1
TO-247-4
IMW120R060M1HXKSA1
Infineon Technologies
COOLSIC MOSFETS 1200V
4.806
CoolSiC™
N-Channel
SiC (Silicon Carbide Junction Transistor)
1.2kV
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31nC @ 18V
+23V, -7V
1.06nF @ 800V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
IMZ120R060M1HXKSA1
Infineon Technologies
COOLSIC MOSFETS 1200V
5.760
CoolSiC™
N-Channel
SiC (Silicon Carbide Junction Transistor)
1.2kV
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31nC @ 18V
+23V, -7V
1.06nF @ 800V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-1
TO-247-4
IMW120R030M1HXKSA1
Infineon Technologies
COOLSIC MOSFETS 1200V
2.790
CoolSiC™
N-Channel
SiC (Silicon Carbide Junction Transistor)
1.2kV
56A (Tc)
15V, 18V
40mOhm @ 25A, 18V
5.7V @ 10mA
63nC @ 18V
+23V, -7V
2.12nF @ 800V
-
227W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
IMZ120R030M1HXKSA1
Infineon Technologies
COOLSIC MOSFETS 1200V
2.844
CoolSiC™
N-Channel
SiC (Silicon Carbide Junction Transistor)
1.2kV
56A (Tc)
15V, 18V
40mOhm @ 25A, 18V
5.7V @ 10mA
63nC @ 18V
+23V, -7V
2.12nF @ 800V
-
227W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-1
TO-247-4
SN7002NH6433XTMA1
Infineon Technologies
MOSFET N-CH 60V 200MA SOT23
4.536
SIPMOS™
N-Channel
MOSFET (Metal Oxide)
60V
200mA (Ta)
4.5V, 10V
5Ohm @ 500mA, 10V
1.8V @ 26µA
1.5nC @ 10V
±20V
45pF @ 25V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SN7002WH6433XTMA1
Infineon Technologies
MOSFET N-CH 60V 230MA SOT-323
7.200
*
-
-
-
-
4.5V, 10V
-
-
-
±20V
-
-
-
-
-
-
-
BSS670S2LH6433XTMA1
Infineon Technologies
MOSFET N-CH 55V 540MA SOT23
8.190
*
-
-
-
-
4.5V, 10V
-
-
-
±20V
-
-
-
-
-
-
-