Infineon Technologies Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerInfineon Technologies
Datensätze 720
Seite 5/24
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
DIODE SCHOTTKY 4V 110MA SC79-2 |
4.770 |
|
- | Schottky | 4V | 110mA (DC) | 410mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 1V | 230pF @ 0V, 1MHz | Surface Mount | 0201 (0603 Metric) | PG-TSSLP-2-1 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 2A VSON-4 |
3.564 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 2A (DC) | 1.7V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 35µA @ 650V | 70pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 2A TO263-2 |
7.434 |
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CoolSiC™+ | Silicon Carbide Schottky | 650V | 2A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 330µA @ 650V | 70pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 3A TO263-2 |
2.412 |
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CoolSiC™+ | Silicon Carbide Schottky | 650V | 3A (DC) | 1.8V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 500µA @ 650V | 100pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 2A TO220-2 |
7.578 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 2A (DC) | 1.7V @ 2A | No Recovery Time > 500mA (Io) | 0ns | - | 70pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 3A TO252-3 |
2.718 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 3A (DC) | 2.3V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 15µA @ 600V | 60pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 29.2A TO220 |
4.356 |
|
- | Standard | 600V | 29.2A (DC) | 2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 87ns | 50µA @ 600V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 29.2A TO263 |
8.028 |
|
- | Standard | 600V | 29.2A (DC) | 2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 87ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | -40°C ~ 175°C |
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Infineon Technologies |
SIC DIODES |
5.202 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 13A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 14µA @ 420V | 205pF @ 1V, 1MHz | Surface Mount | 10-PowerSOP Module | PG-HDSOP-10-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 4A TO263-2 |
3.096 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 4A (DC) | 1.8V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 670µA @ 650V | 130pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 4A VSON-4 |
3.546 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 4A (DC) | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 650V | 130pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 15A TO220-2 |
8.028 |
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- | Standard | 650V | 15A | 2.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 47ns | 40µA @ 650V | - | Through Hole | TO-220-2 | TO-220-2 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 40A TO220-2 |
6.318 |
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- | Standard | 650V | 40A (DC) | 2.2V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 32ns | 40µA @ 650V | - | Through Hole | TO-220-2 | PG-TO220-2-1 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 28A TO220-2 |
4.698 |
|
- | Standard | 1200V | 28A (DC) | 2.15V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 3A TO220-2 |
7.974 |
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CoolSiC™+ | Silicon Carbide Schottky | 600V | 3A (DC) | 2.3V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 15µA @ 600V | 60pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 4A TO252-3 |
6.714 |
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CoolSiC™+ | Silicon Carbide Schottky | 600V | 4A (DC) | 2.3V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 25µA @ 600V | 80pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 7.5A WAFER |
8.226 |
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- | Standard | 1200V | 7.5A (DC) | 1.97V @ 7.5A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 5A TO263-2 |
3.508 |
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CoolSiC™+ | Silicon Carbide Schottky | 650V | 5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 830µA @ 650V | 160pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 60A TO220-2 |
6.444 |
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- | Standard | 650V | 60A (DC) | 2.2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 42ns | 40µA @ 650V | - | Through Hole | TO-220-2 | PG-TO220-2-1 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 52.3A TO263 |
8.046 |
|
- | Standard | 600V | 52.3A (DC) | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 126ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 31A TO220-2 |
7.974 |
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- | Standard | 1200V | 31A (DC) | 2.15V @ 18A | Fast Recovery =< 500ns, > 200mA (Io) | 195ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP DSO-19 |
3.562 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE SCHOTTKY 650V 6A VSON-4 |
6.912 |
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CoolSiC™+ | Silicon Carbide Schottky | 650V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 110µA @ 650V | 190pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
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Infineon Technologies |
SIC DIODES |
5.166 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 18A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 420V | 302pF @ 1V, 1MHz | Surface Mount | 10-PowerSOP Module | PG-HDSOP-10-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 52.3A TO220 |
6.822 |
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- | Standard | 600V | 52.3A (DC) | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 126ns | 50µA @ 600V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 6A TO263-2 |
7.560 |
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CoolSiC™+ | Silicon Carbide Schottky | 650V | 6A (DC) | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 1.1mA @ 650V | 190pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 10A WAFER |
4.968 |
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- | Standard | 1200V | 10A | 2.05V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 2.7µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 5A TO252-3 |
7.182 |
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CoolSiC™+ | Silicon Carbide Schottky | 600V | 5A (DC) | 2.3V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 600V | 110pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 5A TO220-2 |
8.136 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 650V | 160pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DUMMY 57 |
6.534 |
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