Infineon Technologies Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerInfineon Technologies
Datensätze 720
Seite 8/24
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
STD THYR/DIODEN DISC |
4.446 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
SIC CHIP |
4.050 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
Infineon Technologies |
DIODE GEN PURP 200V 650A |
4.086 |
|
- | Standard | 200V | 650A | 950mV @ 450A | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 200V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
SIC CHIP |
7.146 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 650A |
5.562 |
|
- | Standard | 600V | 650A | 950mV @ 450A | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 600V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 970A |
5.040 |
|
- | Standard | 600V | 970A | 970mV @ 750A | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 600V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.6KV 770A |
4.050 |
|
- | Standard | 1600V | 770A | 1.08V @ 400A | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 1600V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.8KV 770A |
5.004 |
|
- | Standard | 1800V | 770A | 1.08V @ 400A | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 1800V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.8KV 950A |
2.034 |
|
- | Standard | 1800V | 950A | 1.12V @ 650A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 1800V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GP 1.2KV 89A BG-PB20-1 |
4.914 |
|
- | Standard | 1200V | 89A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1200V | - | Chassis Mount | Module | BG-PB20-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 1230A |
5.292 |
|
- | Standard | 1200V | 1230A | 1.063V @ 800A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 1200V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.4KV 1230A |
8.982 |
|
- | Standard | 1400V | 1230A | 1.063V @ 800A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 1400V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
SIC CHIP |
7.110 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GP 1.6KV 89A BG-PB20-1 |
6.732 |
|
- | Standard | 1600V | 89A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1600V | - | Chassis Mount | Module | BG-PB20-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GP 1.2KV 104A BG-PB20-1 |
6.516 |
|
- | Standard | 1200V | 104A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1200V | - | Chassis Mount | Module | BG-PB20-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2.2KV 820A |
5.886 |
|
- | Standard | 2200V | 820A | 1.25V @ 750A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 2200V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
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Infineon Technologies |
DIODE GEN PURP 2.2KV 950A |
5.688 |
|
- | Standard | 2200V | 950A | 1.12V @ 650A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 2200V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GP 1.6KV 104A BG-PB20-1 |
7.308 |
|
- | Standard | 1600V | 104A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1600V | - | Chassis Mount | Module | BG-PB20-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2.4KV 820A |
7.794 |
|
- | Standard | 2400V | 820A | 1.25V @ 750A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 2400V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GP 1.8KV 104A BG-PB20-1 |
7.506 |
|
- | Standard | 1800V | 104A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1800V | - | Chassis Mount | Module | BG-PB20-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.6KV 1230A |
5.706 |
|
- | Standard | 1600V | 1230A | 1.063V @ 800A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 1600V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.8KV 1230A |
7.650 |
|
- | Standard | 1800V | 1230A | 1.063V @ 800A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 1800V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GP 1.4KV 104A BG-PB34-1 |
2.070 |
|
- | Standard | 1400V | 104A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1400V | - | Chassis Mount | Module | BG-PB34-1 | -40°C ~ 135°C |
|
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|
Infineon Technologies |
DIODE GEN PURP 1.8KV 1050A |
8.964 |
|
- | Standard | 1800V | 1050A | 1V @ 1000A | Standard Recovery >500ns, > 200mA (Io) | - | 60mA @ 1800V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GP 1.6KV 171A BG-PB34-1 |
5.976 |
|
- | Standard | 1600V | 171A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1600V | - | Chassis Mount | Module | BG-PB34-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GP 1.2KV 171A BG-PB34-1 |
3.510 |
|
- | Standard | 1200V | 171A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1200V | - | Chassis Mount | Module | BG-PB34-1 | -40°C ~ 135°C |
|
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Infineon Technologies |
DIODE GP 1.2KV 104A BG-PB50ND-1 |
6.102 |
|
- | Standard | 1200V | 104A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1200V | - | Chassis Mount | Module | BG-PB50ND-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2.2KV 1030A |
4.950 |
|
- | Standard | 2200V | 1030A | 1.11V @ 10000A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 2200V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GP 1.8KV 171A BG-PB34-1 |
7.452 |
|
- | Standard | 1800V | 171A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1800V | - | Chassis Mount | Module | BG-PB34-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GP 1.4KV 260A BG-PB50ND-1 |
7.992 |
|
- | Standard | 1400V | 260A | - | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 1400V | - | Chassis Mount | Module | BG-PB50ND-1 | -40°C ~ 135°C |