Infineon Technologies Gleichrichter - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Filter anzeigen
Filter zurücksetzen
Filter anwenden
KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerInfineon Technologies
Datensätze 720
Seite 11/24
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE GEN PURP 400V 8320A |
8.334 |
|
- | Standard | 400V | 8320A | 795mV @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 400V | - | Chassis Mount | DO-200AD | - | -25°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 6.8KV 1070A |
8.460 |
|
- | Standard | 6800V | 1070A | 1.9V @ 1200A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 6800V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 3.6KV 950A MODULE |
6.102 |
|
- | Standard | 3600V | 950A | 1.78V @ 3000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 3600V | - | Chassis Mount | Module | Module | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 8320A |
3.510 |
|
- | Standard | 600V | 8320A | 795mV @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 600V | - | Chassis Mount | DO-200AD | - | -25°C ~ 150°C |
|
|
|
Infineon Technologies |
HIGH POWER THYR / DIO |
3.618 |
|
- | Standard | 4500V | 700A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis Mount | DO-200AC, K-PUK | BG-D7526K0-1-1 | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 4.5KV 3250A |
8.514 |
|
- | Standard | 4500V | 3250A | 1.2V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4500V | - | Chassis Mount | DO-200AD | - | -40°C ~ 140°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 6.8KV 2200A |
6.444 |
|
- | Standard | 6800V | 2200A | 1.8V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 6800V | - | Chassis Mount | DO-200AC, K-PUK | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 9KV 760A |
2.754 |
|
- | Standard | 9000V | 760A | 3.2V @ 1200A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 9000V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
RECT DIODE 6500V BG-D7626K-1-1 |
5.112 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2.2KV 4810A |
2.538 |
|
- | Standard | 2200V | 4810A | 1.078V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 200mA @ 2200V | - | Chassis Mount | DO-200AE | - | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 4.4KV 950A MODULE |
4.284 |
|
- | Standard | 4400V | 950A | 1.78V @ 3000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4400V | - | Chassis Mount | Module | Module | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2.8KV 4810A |
3.834 |
|
- | Standard | 2800V | 4810A | 1.078V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 200mA @ 2800V | - | Chassis Mount | DO-200AE | - | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 4.5KV 1225A |
3.564 |
|
- | Standard | 4500V | 1225A | 3.5V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 250mA @ 4500V | - | Chassis Mount | DO-200AD | - | -40°C ~ 125°C |
|
|
|
Infineon Technologies |
THYR / DIODE MODULE DK |
5.310 |
|
- | Standard | 4400V | 950A | - | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4400V | - | Chassis Mount | Module | BG-PB70-1 | 160°C (Max) |
|
|
|
Infineon Technologies |
THYR / DIODE MODULE DK |
8.244 |
|
- | Standard | 4400V | 950A | - | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4400V | - | Chassis Mount | Module | BG-PB70-1 | 160°C (Max) |
|
|
|
Infineon Technologies |
DIODE GEN PURP 4.5KV 445A |
3.582 |
|
- | Standard | 4500V | 445A | 4.15V @ 1200A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 4500V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 125°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 4.5KV 1140A |
7.866 |
|
- | Standard | 4500V | 1140A | 6V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4500V | - | Chassis Mount | DO-200AD | - | 0°C ~ 140°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 6.5KV 1220A |
7.704 |
|
- | Standard | 6500V | 1220A | 5.6V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 6500V | - | Chassis Mount | DO-200AD | - | 0°C ~ 140°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 4.5KV 1450A |
2.538 |
|
- | Standard | 4500V | 1450A | 4.2V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4500V | - | Chassis Mount | DO-200AD | - | 0°C ~ 140°C |
|
|
|
Infineon Technologies |
RECTIFIER DIODE 6800V 2930A |
4.752 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 6KV 3910A |
8.226 |
|
- | Standard | 6000V | 3910A | 1.7V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 6000V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE RECTIFIER 2200V 4240A |
6.750 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 6.5KV 3910A |
3.330 |
|
- | Standard | 6500V | 3910A | 1.7V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 6500V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2KV 6010A |
6.318 |
|
- | Standard | 2000V | 6010A | 1V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 200mA @ 2000V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2.2KV 6010A |
4.698 |
|
- | Standard | 2200V | 6010A | 1V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 200mA @ 2200V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 6.5KV 1100A |
6.444 |
|
- | Standard | 6500V | 1100A | 5.6V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 6500V | - | Chassis Mount | DO-200AE | - | 0°C ~ 140°C |
|
|
|
Infineon Technologies |
RECTIFIER DIODE DISC |
3.456 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 6.5KV 4090A |
2.322 |
|
- | Standard | 6500V | 4090A | 1.7V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 6500V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 4KV 4870A |
6.264 |
|
- | Standard | 4000V | 4870A | 1.27V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4000V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 6KV 4090A |
3.834 |
|
- | Standard | 6000V | 4090A | 1.7V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 6000V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |