Infineon Technologies Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerInfineon Technologies
Datensätze 720
Seite 3/24
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Hersteller |
Beschreibung |
Auf Lager |
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
IGBT 650V 40A TO247-3 |
8.256 |
|
- | Standard | 650V | 42A (DC) | 2.1V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 76ns | 40µA @ 650V | - | Through Hole | TO-247-3 | PG-TO247-3-AI | -40°C ~ 175°C |
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Infineon Technologies |
SIC SCHOTTKY 1200V 10A TO247-2 |
6.792 |
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CoolSiC™+ | Silicon Carbide Schottky | 1200V | 34A (DC) | 1.65V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 1200V | 730pF @ 1V, 1MHz | Through Hole | TO-247-2 | PG-TO247-2 | -55°C ~ 175°C |
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Infineon Technologies |
SIC SCHOTTKY 1200V 15A TO247-2 |
8.472 |
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CoolSiC™+ | Silicon Carbide Schottky | 1200V | 49A (DC) | 1.65V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 124µA @ 1200V | 1050pF @ 1V, 1MHz | Through Hole | TO-247-2 | PG-TO247-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO247 |
7.992 |
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Automotive, AEC-Q100/101, CoolSiC™ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 303pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -40°C ~ 175°C |
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Infineon Technologies |
SIC SCHOTTKY 1200V 20A TO247-2 |
8.568 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 62A (DC) | 1.65V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 166µA @ 1200V | 1368pF @ 1V, 1MHz | Through Hole | TO-247-2 | PG-TO247-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO247 |
8.406 |
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Automotive, AEC-Q100/101, CoolSiC™ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 650V | 363pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -40°C ~ 175°C |
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Infineon Technologies |
SIC SCHOTTKY 1200V 30A TO247-2 |
6.240 |
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CoolSiC™+ | Silicon Carbide Schottky | 1200V | 87A (DC) | 1.65V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 248µA @ 1200V | 1980pF @ 1V, 1MHz | Through Hole | TO-247-2 | PG-TO247-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 16A TO247 |
8.082 |
|
Automotive, AEC-Q100/101, CoolSiC™ | Silicon Carbide Schottky | 650V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 650V | 471pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 20A TO247 |
7.680 |
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Automotive, AEC-Q100/101, CoolSiC™ | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 650V | 584pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -40°C ~ 175°C |
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Infineon Technologies |
SIC SCHOTTKY 1200V 40A TO247-2 |
7.692 |
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CoolSiC™+ | Silicon Carbide Schottky | 1200V | 110A (DC) | 1.65V @ 40A | No Recovery Time > 500mA (Io) | 0ns | 332µA @ 1200V | 2592pF @ 1V, 1MHz | Through Hole | TO-247-2 | PG-TO247-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 30A TO247 |
6.204 |
|
Automotive, AEC-Q100/101, CoolSiC™ | Silicon Carbide Schottky | 650V | 30A (DC) | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 650V | 860pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 40A TO247 |
8.172 |
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Automotive, AEC-Q100/101, CoolSiC™ | Silicon Carbide Schottky | 650V | 40A (DC) | 1.7V @ 40A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 650V | 1138pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GP 400V 1A SOT89 |
44.904 |
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Automotive, AEC-Q101 | Standard | 400V | 1A (DC) | 1.6V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1µs | 1µA @ 400V | 10pF @ 0V, 1MHz | Surface Mount | TO-243AA | PG-SOT89 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 30V 1A TSLP-2 |
8.262 |
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- | Schottky | 30V | 1A | 650mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 30V | 15pF @ 5V, 1MHz | Surface Mount | SOD-882 | PG-TSLP-2 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 4V 110MA TSLP-2 |
6.876 |
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- | Schottky | 4V | 110mA (DC) | 410mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 1V | 350pF @ 0V, 1MHz | Surface Mount | 2-XDFN | PG-TSLP-2-19 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 8A TO252-2 |
5.976 |
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CoolSiC™+ | Silicon Carbide Schottky | 1200V | 8A (DC) | 1.95V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1200V | 365pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHTKY 1200V 38A PGTO252-2 |
7.254 |
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CoolSiC™+ | Silicon Carbide Schottky | 1200V | 38A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 62µA @ 12V | 29pF @ 800V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-2 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 650V 60A TO220-2 |
8.604 |
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- | Standard | 650V | 60A (DC) | 1.7V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 64ns | 40µA @ 650V | - | Through Hole | TO-220-2 | PG-TO220-2-1 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 50A TO220-2 |
7.932 |
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- | Standard | 1200V | 50A (DC) | 2.15V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 243ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 650V 8A TO220-2 |
15.888 |
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- | Standard | 650V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 40µA @ 650V | - | Through Hole | TO-220-2 | TO-220-2 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 15A TO220 |
21.528 |
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- | Standard | 650V | 15A | 2.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 47ns | 40µA @ 650V | - | Through Hole | TO-220-2 | TO-220 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 3A TO220-2-1 |
11.388 |
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CoolSiC™+ | Silicon Carbide Schottky | 650V | 3A (DC) | 1.7V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 100pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 71A TO220-2 |
9.396 |
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- | Standard | 600V | 71A (DC) | 2V @ 45A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 50µA @ 600V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 80A TO247-3 |
8.262 |
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- | Standard | 650V | 80A | 2.3V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 40µA @ 650V | - | Through Hole | TO-247-3 | TO-247-3 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE MODULE 1800V 600A |
4.122 |
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* | - | - | - | - | - | - | - | - | Chassis Mount | Module | Module | - |
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Infineon Technologies |
DIODE GEN PURP 650V 15A TO220-2 |
7.704 |
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- | Standard | 650V | 15A | 1.7V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 114ns | 40µA @ 650V | - | Through Hole | TO-220-2 | TO-220-2 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 8A TO220-2 |
10.032 |
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- | Standard | 650V | 8A | 2.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 40µA @ 650V | - | Through Hole | TO-220-2 | TO-220-2 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 16A TO220-2 |
5.688 |
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- | Silicon Carbide Schottky | 650V | 16A (DC) | 1.35V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 420V | 302pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 30A TO247-3 |
9.312 |
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- | Standard | 650V | 30A | 2.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 47ns | 40µA @ 650V | - | Through Hole | TO-247-3 | PG-TO247-3 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 80A TO247-3 |
7.272 |
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- | Standard | 650V | 80A | 1.7V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 129ns | 40µA @ 650V | - | Through Hole | TO-247-3 | TO-247-3 | -40°C ~ 175°C |