Toshiba Semiconductor and Storage Transistoren - Bipolar (BJT) - Single

Serie

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Transistortyp

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Strom - Kollektor (Ic) (max.)

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Spannung - Kollektor-Emitter-Durchschlag (max.)

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Vce-Sättigung (Max) @ Ib, Ic

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Strom - Kollektorabschaltung (max.)

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Gleichstromverstärkung (hFE) (min) @ Ic, Vce

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Leistung - max

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Frequenz - Übergang

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Betriebstemperatur

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Montagetyp

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Paket / Fall

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Lieferantengerätepaket

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KategorieHalbleiter / Transistoren / Transistoren - Bipolar (BJT) - Single

HerstellerToshiba Semiconductor and Storage

Datensätze 377

Seite 8/13

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Transistortyp	Strom - Kollektor (Ic) (max.)	Spannung - Kollektor-Emitter-Durchschlag (max.)	Vce-Sättigung (Max) @ Ib, Ic	Strom - Kollektorabschaltung (max.)	Gleichstromverstärkung (hFE) (min) @ Ic, Vce	Leistung - max	Frequenz - Übergang	Betriebstemperatur	Montagetyp	Paket / Fall	Lieferantengerätepaket
2SA965-Y(F,M)	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	2.916	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SA965-Y(T6CANO,FM	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	5.832	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SA965-Y,F(J	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	2.592	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SA965-Y,SWFF(M	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	4.698	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SA965-Y,T6F(J	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	7.128	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SA965-Y,T6KOJPF(J	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	2.502	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SB1375,CLARIONF(M	Toshiba Semiconductor and Storage	TRANS PNP 3A 60V TO220-3	3.510	-	PNP	3A	60V	1.5V @ 200mA, 2A	10µA (ICBO)	100 @ 500mA, 5V	2W	9MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SB1457(T6CANO,F,M	Toshiba Semiconductor and Storage	TRANS PNP 2A 100V TO226-3	5.292	-	PNP	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SB1457(T6CNO,A,F)	Toshiba Semiconductor and Storage	TRANS PNP 2A 100V TO226-3	5.904	-	PNP	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SB1457(T6DW,F,M)	Toshiba Semiconductor and Storage	TRANS PNP 2A 100V TO226-3	8.010	-	PNP	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SB1457(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS PNP 2A 100V TO226-3	6.786	-	PNP	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SB1457,T6TOTOF(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 100V TO226-3	3.726	-	PNP	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SB1457,T6YMEF(M	Toshiba Semiconductor and Storage	TRANS PNP 2A 100V TO226-3	7.560	-	PNP	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SB1481(TOJS,Q,M)	Toshiba Semiconductor and Storage	TRANS PNP 4A 100V TO220-3	6.642	-	PNP	4A	100V	1.5V @ 6mA, 3A	2µA (ICBO)	2000 @ 3A, 2V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SB1495,Q(J	Toshiba Semiconductor and Storage	TRANS PNP 3A 100V TO220-3	8.154	-	PNP	3A	100V	1.5V @ 1.5mA, 1.5A	10µA (ICBO)	2000 @ 2A, 2V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SB1495,Q(M	Toshiba Semiconductor and Storage	TRANS PNP 3A 100V TO220-3	7.470	-	PNP	3A	100V	1.5V @ 1.5mA, 1.5A	10µA (ICBO)	2000 @ 2A, 2V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC1627A-O,PASF(M	Toshiba Semiconductor and Storage	TRANS NPN 400MA 80V TO226-3	2.124	-	NPN	400mA	80V	400mV @ 20mA, 200A	100nA (ICBO)	70 @ 50mA, 2V	800mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC1627A-Y,PASF(M	Toshiba Semiconductor and Storage	TRANS NPN 400MA 80V TO226-3	2.430	-	NPN	400mA	80V	400mV @ 20mA, 200A	100nA (ICBO)	70 @ 50mA, 2V	800mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229(TE6SAN1F,M	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	5.058	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-O(MIT1F,M)	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	7.218	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-O(MITIF,M)	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	4.068	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-O(SHP,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	6.984	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-O(SHP1,F,M	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	7.020	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-O(T6MIT1FM	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	6.948	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-O(T6SAN2FM	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	6.768	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-O(T6SHP1FM	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	5.256	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-O(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	5.616	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-Y(MIT,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	3.526	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-Y(MIT1,F,M	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	8.334	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-Y(SAN2,F,M	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	7.668	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD

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