Toshiba Semiconductor and Storage Transistoren - Bipolar (BJT) - Single

Serie

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Transistortyp

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Strom - Kollektor (Ic) (max.)

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Spannung - Kollektor-Emitter-Durchschlag (max.)

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Vce-Sättigung (Max) @ Ib, Ic

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Strom - Kollektorabschaltung (max.)

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Gleichstromverstärkung (hFE) (min) @ Ic, Vce

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Leistung - max

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Frequenz - Übergang

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Betriebstemperatur

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Montagetyp

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Paket / Fall

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Lieferantengerätepaket

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KategorieHalbleiter / Transistoren / Transistoren - Bipolar (BJT) - Single

HerstellerToshiba Semiconductor and Storage

Datensätze 377

Seite 7/13

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Transistortyp	Strom - Kollektor (Ic) (max.)	Spannung - Kollektor-Emitter-Durchschlag (max.)	Vce-Sättigung (Max) @ Ib, Ic	Strom - Kollektorabschaltung (max.)	Gleichstromverstärkung (hFE) (min) @ Ic, Vce	Leistung - max	Frequenz - Übergang	Betriebstemperatur	Montagetyp	Paket / Fall	Lieferantengerätepaket
2SA1869-Y,MTSAQ(J	Toshiba Semiconductor and Storage	TRANS PNP 3A 50V TO220-3	8.082	-	PNP	3A	50V	600mV @ 200mA, 2A	1µA (ICBO)	70 @ 500mA, 2V	10W	100MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1869-Y,Q(J	Toshiba Semiconductor and Storage	TRANS PNP 3A 50V TO220-3	2.394	-	PNP	3A	50V	600mV @ 200mA, 2A	1µA (ICBO)	70 @ 500mA, 2V	10W	100MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1930(LBS2MATQ,M	Toshiba Semiconductor and Storage	TRANS PNP 2A 180V TO220-3	8.820	-	PNP	2A	180V	1V @ 100mA, 1A	5µA (ICBO)	100 @ 100mA, 5V	2W	200MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1930(ONK,Q,M)	Toshiba Semiconductor and Storage	TRANS PNP 2A 180V TO220-3	4.050	-	PNP	2A	180V	1V @ 100mA, 1A	5µA (ICBO)	100 @ 100mA, 5V	2W	200MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1930,CKQ(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 180V TO220-3	5.328	-	PNP	2A	180V	1V @ 100mA, 1A	5µA (ICBO)	100 @ 100mA, 5V	2W	200MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1930,LBS2DIAQ(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 180V TO220-3	7.002	-	PNP	2A	180V	1V @ 100mA, 1A	5µA (ICBO)	100 @ 100mA, 5V	2W	200MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1930,ONKQ(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 180V TO220-3	6.750	-	PNP	2A	180V	1V @ 100mA, 1A	5µA (ICBO)	100 @ 100mA, 5V	2W	200MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1930,Q(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 180V TO220-3	4.716	-	PNP	2A	180V	1V @ 100mA, 1A	5µA (ICBO)	100 @ 100mA, 5V	2W	200MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1931(NOMARK,A,Q	Toshiba Semiconductor and Storage	TRANS PNP 5A 50V TO220-3	2.088	-	PNP	5A	50V	400mV @ 200mA, 2A	1µA (ICBO)	100 @ 1A, 1V	2W	60MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1931,BOSCHQ(J	Toshiba Semiconductor and Storage	TRANS PNP 5A 50V TO220-3	7.758	-	PNP	5A	50V	400mV @ 200mA, 2A	1µA (ICBO)	100 @ 1A, 1V	2W	60MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1931,KEHINQ(M	Toshiba Semiconductor and Storage	TRANS PNP 5A 50V TO220-3	6.048	-	PNP	5A	50V	400mV @ 200mA, 2A	1µA (ICBO)	100 @ 1A, 1V	2W	60MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1931,NETQ(J	Toshiba Semiconductor and Storage	TRANS PNP 5A 50V TO220-3	7.326	-	PNP	5A	50V	400mV @ 200mA, 2A	1µA (ICBO)	100 @ 1A, 1V	2W	60MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1931,NETQ(M	Toshiba Semiconductor and Storage	TRANS PNP 5A 50V TO220-3	3.546	-	PNP	5A	50V	400mV @ 200mA, 2A	1µA (ICBO)	100 @ 1A, 1V	2W	60MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1931,NIKKIQ(J	Toshiba Semiconductor and Storage	TRANS PNP 5A 50V TO220-3	8.442	-	PNP	5A	50V	400mV @ 200mA, 2A	1µA (ICBO)	100 @ 1A, 1V	2W	60MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1931,NSEIKIQ(J	Toshiba Semiconductor and Storage	TRANS PNP 5A 50V TO220-3	8.514	-	PNP	5A	50V	400mV @ 200mA, 2A	1µA (ICBO)	100 @ 1A, 1V	2W	60MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1931,Q(J	Toshiba Semiconductor and Storage	TRANS PNP 5A 50V TO220-3	4.284	-	PNP	5A	50V	400mV @ 200mA, 2A	1µA (ICBO)	100 @ 1A, 1V	2W	60MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1931,SINFQ(J	Toshiba Semiconductor and Storage	TRANS PNP 5A 50V TO220-3	4.086	-	PNP	5A	50V	400mV @ 200mA, 2A	1µA (ICBO)	100 @ 1A, 1V	2W	60MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1972,F(J	Toshiba Semiconductor and Storage	TRANS PNP 500MA 400V TO226-3	6.192	-	PNP	500mA	400V	1V @ 10mA, 100mA	10µA (ICBO)	140 @ 20mA, 5V	900mW	35MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1972,T6WNLF(J	Toshiba Semiconductor and Storage	TRANS PNP 500MA 400V TO226-3	2.268	-	PNP	500mA	400V	1V @ 10mA, 100mA	10µA (ICBO)	140 @ 20mA, 5V	900mW	35MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA949-O(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3	5.886	-	PNP	50mA	150V	800mV @ 1mA, 10A	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA949-Y(JVC1,F,M)	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3	5.940	-	PNP	50mA	150V	800mV @ 1mA, 10A	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA949-Y(T6JVC1,FM	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3	5.094	-	PNP	50mA	150V	800mV @ 1mA, 10A	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA949-Y(T6ONK1,FM	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3	4.608	-	PNP	50mA	150V	800mV @ 1mA, 10A	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA949-Y(T6SHRP,FM	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3	4.842	-	PNP	50mA	150V	800mV @ 1mA, 10A	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA949-Y(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3	4.626	-	PNP	50mA	150V	800mV @ 1mA, 10A	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA949-Y,F(J	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3	3.240	-	PNP	50mA	150V	800mV @ 1mA, 10A	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA949-Y,ONK-1F(J	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3	2.268	-	PNP	50mA	150V	800mV @ 1mA, 10A	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA949-Y,ONK-1F(M	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3	3.078	-	PNP	50mA	150V	800mV @ 1mA, 10A	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA965-O(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	8.640	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SA965-O,F(J	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	7.236	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM

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Toshiba Semiconductor and Storage Transistoren - Bipolar (BJT) - Single

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