Toshiba Semiconductor and Storage Transistoren - Bipolar (BJT) - Single

Serie

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Transistortyp

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Strom - Kollektor (Ic) (max.)

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Spannung - Kollektor-Emitter-Durchschlag (max.)

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Vce-Sättigung (Max) @ Ib, Ic

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Strom - Kollektorabschaltung (max.)

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Gleichstromverstärkung (hFE) (min) @ Ic, Vce

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Leistung - max

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Frequenz - Übergang

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Betriebstemperatur

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Montagetyp

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Paket / Fall

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Lieferantengerätepaket

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KategorieHalbleiter / Transistoren / Transistoren - Bipolar (BJT) - Single

HerstellerToshiba Semiconductor and Storage

Datensätze 377

Seite 9/13

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Transistortyp	Strom - Kollektor (Ic) (max.)	Spannung - Kollektor-Emitter-Durchschlag (max.)	Vce-Sättigung (Max) @ Ib, Ic	Strom - Kollektorabschaltung (max.)	Gleichstromverstärkung (hFE) (min) @ Ic, Vce	Leistung - max	Frequenz - Übergang	Betriebstemperatur	Montagetyp	Paket / Fall	Lieferantengerätepaket
2SC2229-Y(SHP,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	8.640	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-Y(SHP1,F,M	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	3.490	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-Y(T6MIT1FM	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	5.274	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-Y(T6MITIFM	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	7.344	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-Y(T6ONK1FM	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	6.210	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-Y(T6SAN2FM	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	8.388	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-Y(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	2.880	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-Y,F(J	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	8.928	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235(T6KMAT,F,M	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	7.920	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-O(FA1,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	6.012	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-O(T6ASN,FM	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	8.982	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-O(T6FJT,AF	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	2.844	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-O(T6FJT,FM	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	7.200	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-O,F(J	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	4.392	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y(6MBH1,AF	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	8.172	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y(DNSO,AF)	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	2.304	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y(MBSH1,FM	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	3.834	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y(T6CANOFM	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	3.006	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y(T6CN,A,F	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	2.538	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y(T6FJT,AF	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	7.812	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y(T6FJT,FM	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	3.456	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y(T6KMATFM	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	6.300	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y(T6ND,AF	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	5.958	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y(T6OMI,FM	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	2.358	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y,F(J	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	8.604	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y,T6ASHF(J	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	2.268	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y,T6F(J	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	3.402	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y,T6KEHF(M	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	4.032	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y,T6USNF(M	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	5.004	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y,USNHF(M	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	4.320	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD

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Toshiba Semiconductor and Storage Transistoren - Bipolar (BJT) - Single

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