Vishay Siliconix Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerVishay Siliconix
Datensätze 3.936
Seite 66/132
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CHAN 600V |
7.992 |
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EL | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 82nC @ 10V | ±30V | 1757pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 19A TO-247AC |
3.276 |
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EF | N-Channel | MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 182mOhm @ 11A, 10V | 4V @ 250µA | 96nC @ 10V | ±30V | 1423pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET E SERIES 800V TO-220AB |
5.706 |
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E | N-Channel | MOSFET (Metal Oxide) | 800V | 17.4A (Tc) | 10V | 235mOhm @ 11A, 10V | 4V @ 250µA | 72nC @ 10V | ±30V | 1388pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH EF PWR TO-220AB |
7.506 |
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EF | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 125mOhm @ 12A, 10V | 5V @ 250µA | 47nC @ 10V | ±30V | 1533pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 800V TO-247AC |
7.758 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 800V TO-247AC |
5.094 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 600V TO-220 FULLPAK |
3.474 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 100mOhm @ 13A, 10V | 5V @ 250µA | 50nC @ 10V | ±30V | 1851pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 650V 21A D2PAK |
2.322 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 106nC @ 10V | ±30V | 2322pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET E SERIES 600V TO-220AB |
4.698 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 1562pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CHAN 650V D2PAK (TO-263 |
3.078 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 1562pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CHAN E SERIES 600V THIN |
4.554 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 1562pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
EF SERIES POWER MOSFET WITH FAST |
6.354 |
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EF | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 102mOhm @ 13A, 10V | 5V @ 250µA | 53nC @ 10V | ±30V | 1804pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CHAN 600V TO-247AC |
5.022 |
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EL | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 120mOhm @ 15A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 2565pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 28A TO-220AB |
3.816 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 28A (Tc) | 10V | 117mOhm @ 14A, 10V | 4V @ 250µA | 146nC @ 10V | ±30V | 3249pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET E SERIES 600V TO247AC |
8.604 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 100mOhm @ 13A, 10V | 5V @ 250µA | 50nC @ 10V | ±30V | 1851pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 28A TO-247AC |
4.266 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 123mOhm @ 14A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 2714pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 33A TO-247AD |
3.186 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150nC @ 10V | ±30V | 3508pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-3P-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 650V 31.6A TO-247AC |
8.082 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 31.6A (Tc) | 10V | 109mOhm @ 16.5A, 10V | 4V @ 250µA | 171nC @ 10V | ±30V | 4026pF @ 100V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V |
7.956 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 51A (Tc) | 10V | 50mOhm @ 23A, 10V | 5V @ 250µA | 130nC @ 10V | ±30V | 3459pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V |
5.616 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 51A (Tc) | 10V | 50mOhm @ 23A, 10V | 5V @ 250µA | 130nC @ 10V | ±30V | 3459pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 61A TO-247AC |
5.436 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CHAN 650V TO247AC |
4.698 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 99A (Tc) | 10V | 23mOhm @ 25A, 10V | 5V @ 250µA | 228nC @ 10V | ±30V | 7612pF @ 100V | - | 524W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 20V 1A POWERPAK0806 |
6.858 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 1.5V, 4.5V | 730mOhm @ 200mA, 4.5V | 900mV @ 250µA | 1.2nC @ 8V | ±8V | 16pF @ 10V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 0806 | PowerPAK® 0806 |
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Vishay Siliconix |
MOSFET N-CH 30V 1.02A SOT563F |
3.078 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 1.02A (Tc) | 2.5V, 10V | 142mOhm @ 1A, 10V | 1.5V @ 250µA | 3nC @ 4.5V | ±12V | 110pF @ 15V | - | 240mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | - | SOT-563, SOT-666 |
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Vishay Siliconix |
MOSFET N-CH 30V 12A POWERPAK1212 |
2.970 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 24mOhm @ 7.8A, 10V | 2.5V @ 250µA | 12nC @ 10V | ±20V | 435pF @ 15V | - | 15.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 30V 1.44A SC89-6 |
4.554 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 1.44A (Ta) | 2.5V, 4.5V | 100mOhm @ 1.4A, 4.5V | 1.5V @ 250µA | 26nC @ 10V | ±12V | 750pF @ 15V | - | 330mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-6 | SOT-563, SOT-666 |
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Vishay Siliconix |
MOSFET P-CH 30V 20A POWERPAK1212 |
8.802 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 20A (Tc) | 4.5V, 10V | 21mOhm @ 10.5A, 10V | 3V @ 250µA | 50nC @ 10V | ±20V | 1350pF @ 15V | - | 27.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 20V 9.7A 4-MICROFOOT |
2.100 |
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TrenchFET® Gen III | P-Channel | MOSFET (Metal Oxide) | 20V | 9.7A (Tc) | 1.8V, 4.5V | 21mOhm @ 3A, 4.5V | 900mV @ 250µA | 47nC @ 4.5V | ±8V | 2500pF @ 10V | - | 2.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-MICRO FOOT® (1.6x1.6) | 4-UFBGA |
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Vishay Siliconix |
MOSFET N-CH 30V 12A SC70-6 |
6.228 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 18mOhm @ 9A, 10V | 2.4V @ 250µA | 17nC @ 10V | ±20V | 570pF @ 15V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Vishay Siliconix |
MOSFET P-CH 20V 12A SC70-6 |
5.814 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 12A (Tc) | 2.5V, 4.5V | 16.5mOhm @ 7A, 4.5V | 1.2V @ 250µA | 72nC @ 10V | ±12V | 2130pF @ 10V | - | 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |