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Vishay Siliconix Transistoren - FETs, MOSFETs - Single

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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerVishay Siliconix
Datensätze 3.936
Seite 66/132
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
FET-Typ
Technologie
Drain to Source Voltage (Vdss)
Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.
Antriebsspannung (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs (th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Eingangskapazität (Ciss) (Max) @ Vds
FET-Funktion
Verlustleistung (max.)
Betriebstemperatur
Montagetyp
Lieferantengerätepaket
Paket / Fall
SIHP22N60AEL-GE3
Vishay Siliconix
MOSFET N-CHAN 600V
7.992
EL
N-Channel
MOSFET (Metal Oxide)
600V
21A (Tc)
10V
180mOhm @ 11A, 10V
4V @ 250µA
82nC @ 10V
±30V
1757pF @ 100V
-
208W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SIHG22N60EF-GE3
Vishay Siliconix
MOSFET N-CH 600V 19A TO-247AC
3.276
EF
N-Channel
MOSFET (Metal Oxide)
600V
19A (Tc)
10V
182mOhm @ 11A, 10V
4V @ 250µA
96nC @ 10V
±30V
1423pF @ 100V
-
179W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
SIHP21N80AE-GE3
Vishay Siliconix
MOSFET E SERIES 800V TO-220AB
5.706
E
N-Channel
MOSFET (Metal Oxide)
800V
17.4A (Tc)
10V
235mOhm @ 11A, 10V
4V @ 250µA
72nC @ 10V
±30V
1388pF @ 100V
-
32W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SIHP125N60EF-GE3
Vishay Siliconix
MOSFET N-CH EF PWR TO-220AB
7.506
EF
N-Channel
MOSFET (Metal Oxide)
600V
25A (Tc)
10V
125mOhm @ 12A, 10V
5V @ 250µA
47nC @ 10V
±30V
1533pF @ 100V
-
179W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SIHG21N80AE-GE3
Vishay Siliconix
MOSFET N-CH 800V TO-247AC
7.758
*
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SIHW21N80AE-GE3
Vishay Siliconix
MOSFET N-CH 800V TO-247AC
5.094
*
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SIHA100N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V TO-220 FULLPAK
3.474
E
N-Channel
MOSFET (Metal Oxide)
600V
30A (Tc)
10V
100mOhm @ 13A, 10V
5V @ 250µA
50nC @ 10V
±30V
1851pF @ 100V
-
35W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
SIHB21N65EF-GE3
Vishay Siliconix
MOSFET N-CH 650V 21A D2PAK
2.322
-
N-Channel
MOSFET (Metal Oxide)
650V
21A (Tc)
10V
180mOhm @ 11A, 10V
4V @ 250µA
106nC @ 10V
±30V
2322pF @ 100V
-
208W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D²PAK (TO-263)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIHP120N60E-GE3
Vishay Siliconix
MOSFET E SERIES 600V TO-220AB
4.698
E
N-Channel
MOSFET (Metal Oxide)
600V
25A (Tc)
10V
120mOhm @ 12A, 10V
5V @ 250µA
45nC @ 10V
±30V
1562pF @ 100V
-
179W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SIHB120N60E-GE3
Vishay Siliconix
MOSFET N-CHAN 650V D2PAK (TO-263
3.078
E
N-Channel
MOSFET (Metal Oxide)
600V
25A (Tc)
10V
120mOhm @ 12A, 10V
5V @ 250µA
45nC @ 10V
±30V
1562pF @ 100V
-
179W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D²PAK (TO-263)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIHA120N60E-GE3
Vishay Siliconix
MOSFET N-CHAN E SERIES 600V THIN
4.554
E
N-Channel
MOSFET (Metal Oxide)
600V
25A (Tc)
10V
120mOhm @ 12A, 10V
5V @ 250µA
45nC @ 10V
±30V
1562pF @ 100V
-
34W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
SIHP105N60EF-GE3
Vishay Siliconix
EF SERIES POWER MOSFET WITH FAST
6.354
EF
N-Channel
MOSFET (Metal Oxide)
600V
29A (Tc)
10V
102mOhm @ 13A, 10V
5V @ 250µA
53nC @ 10V
±30V
1804pF @ 100V
-
208W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SIHG30N60AEL-GE3
Vishay Siliconix
MOSFET N-CHAN 600V TO-247AC
5.022
EL
N-Channel
MOSFET (Metal Oxide)
600V
28A (Tc)
10V
120mOhm @ 15A, 10V
4V @ 250µA
120nC @ 10V
±30V
2565pF @ 100V
-
250W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
SIHP28N65EF-GE3
Vishay Siliconix
MOSFET N-CH 650V 28A TO-220AB
3.816
-
N-Channel
MOSFET (Metal Oxide)
650V
28A (Tc)
10V
117mOhm @ 14A, 10V
4V @ 250µA
146nC @ 10V
±30V
3249pF @ 100V
-
250W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SIHG100N60E-GE3
Vishay Siliconix
MOSFET E SERIES 600V TO247AC
8.604
E
N-Channel
MOSFET (Metal Oxide)
600V
30A (Tc)
10V
100mOhm @ 13A, 10V
5V @ 250µA
50nC @ 10V
±30V
1851pF @ 100V
-
208W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
SIHG28N60EF-GE3
Vishay Siliconix
MOSFET N-CH 600V 28A TO-247AC
4.266
-
N-Channel
MOSFET (Metal Oxide)
600V
28A (Tc)
10V
123mOhm @ 14A, 10V
4V @ 250µA
120nC @ 10V
±30V
2714pF @ 100V
-
250W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
SIHW33N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 33A TO-247AD
3.186
-
N-Channel
MOSFET (Metal Oxide)
600V
33A (Tc)
10V
99mOhm @ 16.5A, 10V
4V @ 250µA
150nC @ 10V
±30V
3508pF @ 100V
-
278W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-3P-3 Full Pack
SIHG33N65EF-GE3
Vishay Siliconix
MOSFET N-CH 650V 31.6A TO-247AC
8.082
-
N-Channel
MOSFET (Metal Oxide)
650V
31.6A (Tc)
10V
109mOhm @ 16.5A, 10V
4V @ 250µA
171nC @ 10V
±30V
4026pF @ 100V
-
313W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
SIHP050N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V
7.956
E
N-Channel
MOSFET (Metal Oxide)
600V
51A (Tc)
10V
50mOhm @ 23A, 10V
5V @ 250µA
130nC @ 10V
±30V
3459pF @ 100V
-
278W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SIHG050N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V
5.616
E
N-Channel
MOSFET (Metal Oxide)
600V
51A (Tc)
10V
50mOhm @ 23A, 10V
5V @ 250µA
130nC @ 10V
±30V
3459pF @ 100V
-
278W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
SIHG039N60EF-GE3
Vishay Siliconix
MOSFET N-CH 600V 61A TO-247AC
5.436
*
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SIHG018N60E-GE3
Vishay Siliconix
MOSFET N-CHAN 650V TO247AC
4.698
E
N-Channel
MOSFET (Metal Oxide)
600V
99A (Tc)
10V
23mOhm @ 25A, 10V
5V @ 250µA
228nC @ 10V
±30V
7612pF @ 100V
-
524W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
SIUD402ED-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 1A POWERPAK0806
6.858
-
N-Channel
MOSFET (Metal Oxide)
20V
1A (Ta)
1.5V, 4.5V
730mOhm @ 200mA, 4.5V
900mV @ 250µA
1.2nC @ 8V
±8V
16pF @ 10V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 0806
PowerPAK® 0806
SI1078X-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 1.02A SOT563F
3.078
TrenchFET®
N-Channel
MOSFET (Metal Oxide)
30V
1.02A (Tc)
2.5V, 10V
142mOhm @ 1A, 10V
1.5V @ 250µA
3nC @ 4.5V
±12V
110pF @ 15V
-
240mW (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
-
SOT-563, SOT-666
SIS822DNT-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 12A POWERPAK1212
2.970
-
N-Channel
MOSFET (Metal Oxide)
30V
12A (Tc)
4.5V, 10V
24mOhm @ 7.8A, 10V
2.5V @ 250µA
12nC @ 10V
±20V
435pF @ 15V
-
15.6W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SI1079X-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 1.44A SC89-6
4.554
-
P-Channel
MOSFET (Metal Oxide)
30V
1.44A (Ta)
2.5V, 4.5V
100mOhm @ 1.4A, 4.5V
1.5V @ 250µA
26nC @ 10V
±12V
750pF @ 15V
-
330mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SC-89-6
SOT-563, SOT-666
SIS429DNT-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 20A POWERPAK1212
8.802
-
P-Channel
MOSFET (Metal Oxide)
30V
20A (Tc)
4.5V, 10V
21mOhm @ 10.5A, 10V
3V @ 250µA
50nC @ 10V
±20V
1350pF @ 15V
-
27.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SI8481DB-T1-E1
Vishay Siliconix
MOSFET P-CH 20V 9.7A 4-MICROFOOT
2.100
TrenchFET® Gen III
P-Channel
MOSFET (Metal Oxide)
20V
9.7A (Tc)
1.8V, 4.5V
21mOhm @ 3A, 4.5V
900mV @ 250µA
47nC @ 4.5V
±8V
2500pF @ 10V
-
2.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
4-MICRO FOOT® (1.6x1.6)
4-UFBGA
SIA418DJ-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 12A SC70-6
6.228
TrenchFET®
N-Channel
MOSFET (Metal Oxide)
30V
12A (Tc)
4.5V, 10V
18mOhm @ 9A, 10V
2.4V @ 250µA
17nC @ 10V
±20V
570pF @ 15V
-
3.5W (Ta), 19W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6 Single
PowerPAK® SC-70-6
SIA465EDJ-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 12A SC70-6
5.814
TrenchFET®
P-Channel
MOSFET (Metal Oxide)
20V
12A (Tc)
2.5V, 4.5V
16.5mOhm @ 7A, 4.5V
1.2V @ 250µA
72nC @ 10V
±12V
2130pF @ 10V
-
19W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6 Single
PowerPAK® SC-70-6