Vishay Siliconix Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerVishay Siliconix
Datensätze 3.936
Seite 46/132
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 650V 87A SUPER247 |
7.668 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 87A (Tc) | 10V | 29mOhm @ 45A, 10V | 4V @ 250µA | 591nC @ 10V | ±30V | 11826pF @ 100V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 70A TO-247AC |
46.434 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 38mOhm @ 35A, 10V | 4V @ 250µA | 380nC @ 10V | ±30V | 7500pF @ 100V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 5.2A TO-220AB |
7.656 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 5.2A (Tc) | 10V | 800mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 150V 42A TO252AA |
6.504 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 42A (Tc) | 10V | 44.7mOhm @ 8.3A, 10V | 4V @ 250µA | 16nC @ 10V | ±20V | 560pF @ 50V | - | 65.2W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 60V 6.7A TO-220AB |
20.148 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 1.7A 4-DIP |
7.308 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 1.7A (Ta) | 4V, 5V | 200mOhm @ 1A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 500V 2.5A TO-220AB |
8.832 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | 360pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 5.3A TO-220AB |
7.650 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5.3A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 5V @ 250µA | 20nC @ 10V | ±30V | 325pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 15A TO-220AB |
8.052 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Tc) | 4V, 5V | 160mOhm @ 9A, 5V | 2V @ 250µA | 28nC @ 5V | ±10V | 930pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 10A TO-220AB |
7.308 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 600mOhm @ 5A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 526pF @ 100V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A TO-220AB |
17.244 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4V @ 250µA | 31nC @ 10V | ±20V | 660pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 200V 1.8A TO-220AB |
10.704 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 1.8A (Tc) | 10V | 3Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 170pF @ 25V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 18A TO-220AB |
9.396 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 10V | 140mOhm @ 11A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 1100pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 8A D2PAK |
16.092 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 95A TO263 |
21.504 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 95A (Tc) | 10V | 15.3mOhm @ 20A, 10V | 3.5V @ 250µA | 85nC @ 10V | ±20V | 4200pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A TO-220AB |
20.472 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 7.7A TO220FP |
15.756 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 7.7A (Tc) | 10V | 300mOhm @ 4.6A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 860pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET P-CH 200V 11A D2PAK |
15.276 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1200pF @ 25V | - | 3W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 1000V 3.1A TO-220AB |
16.032 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 3.1A (Tc) | 10V | 5Ohm @ 1.9A, 10V | 4V @ 250µA | 80nC @ 10V | ±20V | 980pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
8.478 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 5.2A (Tc) | 10V | 800mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 3W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 9.8A TO220FP |
16.680 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 9.8A (Tc) | 10V | 180mOhm @ 5.9A, 10V | 4V @ 250µA | 70nC @ 10V | ±20V | 1300pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 100V 131A TO-220 |
17.028 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 131A (Tc) | 7.5V, 10V | 5.8mOhm @ 30A, 10V | 4V @ 250µA | 81nC @ 10V | ±20V | 3330pF @ 50V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 10A D2PAK |
8.184 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 36nC @ 10V | ±30V | 1030pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO220AB |
18.444 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 28mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1900pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 20A TO220FP |
18.156 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 10V | 50mOhm @ 12A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 1200pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 500V 4.6A TO220FP |
17.124 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 4.6A (Tc) | 10V | 850mOhm @ 2.8A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1300pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 400V 10A TO-220AB |
12.744 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 36nC @ 10V | ±30V | 1030pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 21A TO-247AC |
6.606 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 21A (Tc) | 10V | 200mOhm @ 13A, 10V | 4V @ 250µA | 61nC @ 10V | ±20V | 1400pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET P-CH 200V 6.5A D2PAK |
18.204 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 6.5A (Tc) | 10V | 800mOhm @ 3.9A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 700pF @ 25V | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 4.8A DPAK |
9.408 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 4.8A (Tc) | 10V | 800mOhm @ 2.9A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |