Vishay Semiconductor Diodes Division Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerVishay Semiconductor Diodes Division
Datensätze 11.281
Seite 157/377
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 2A DO214AA |
4.590 |
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Automotive, AEC-Q101 | Standard | 150V | 2A | 1.05V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 150V | 42pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
6.552 |
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Automotive, AEC-Q101 | Standard | 200V | 2A | 1.05V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 200V | 42pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 2A 60V DO-41 |
6.030 |
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- | Schottky | 60V | 2A | 680mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 8A TO277A |
5.310 |
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eSMP® | Schottky | 20V | 8A | 570mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | 330pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A DO214AB |
6.030 |
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- | Standard | 100V | 2A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 2A DO214AB |
3.472 |
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- | Standard | 150V | 2A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A DO214AB |
4.014 |
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- | Standard | 100V | 2A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 2A DO214AB |
3.418 |
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- | Standard | 150V | 2A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2.4A TO277A |
5.292 |
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Automotive, AEC-Q101, eSMP® | Standard | 100V | 2.4A | 1.05V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.2µs | 10µA @ 100V | 28pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2.4A TO277A |
2.790 |
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Automotive, AEC-Q101, eSMP® | Standard | 200V | 2.4A | 1.05V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.2µs | 10µA @ 200V | 28pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2.4A TO277A |
2.538 |
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Automotive, AEC-Q101, eSMP® | Standard | 200V | 2.4A | 1.05V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.2µs | 10µA @ 200V | 28pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2.4A TO277A |
7.794 |
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Automotive, AEC-Q101, eSMP® | Standard | 600V | 2.4A | 1.05V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.2µs | 10µA @ 600V | 28pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2.4A TO277A |
8.010 |
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Automotive, AEC-Q101, eSMP® | Standard | 100V | 2.4A | 1.05V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.2µs | 10µA @ 100V | 28pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2.4A TO277A |
7.182 |
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Automotive, AEC-Q101, eSMP® | Standard | 200V | 2.4A | 1.05V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.2µs | 10µA @ 200V | 28pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2.4A TO277A |
2.808 |
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Automotive, AEC-Q101, eSMP® | Standard | 200V | 2.4A | 1.05V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.2µs | 10µA @ 200V | 28pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2.4A TO277A |
7.632 |
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Automotive, AEC-Q101, eSMP® | Standard | 600V | 2.4A | 1.05V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.2µs | 10µA @ 600V | 28pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |
8.370 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO214AB |
4.176 |
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- | Standard | 100V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 100V | 70pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3A DO214AB |
4.464 |
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- | Standard | 150V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 150V | 70pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
3.366 |
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- | Standard | 200V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 200V | 70pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO214AB |
2.718 |
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- | Standard | 100V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 100V | 70pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3A DO214AB |
2.502 |
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- | Standard | 150V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 150V | 70pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
7.326 |
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- | Standard | 200V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 200V | 70pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.5A DO220 |
7.614 |
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eSMP® | Avalanche | 800V | 1.5A (DC) | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 800V | 10.4pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 4A DO214AA |
2.952 |
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Automotive, AEC-Q101 | Schottky | 30V | 4A | 490mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 30V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 300V 1.9A SOD57 |
6.750 |
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- | Avalanche | 300V | 1.9A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 300V 1.9A SOD57 |
6.732 |
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- | Avalanche | 300V | 1.9A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.25A SOD57 |
8.190 |
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- | Avalanche | 1000V | 1.25A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 1000V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 100V SOD-57 |
6.408 |
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- | Avalanche | 100V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 100V SOD-57 |
6.588 |
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- | Avalanche | 100V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |