Vishay Semiconductor Diodes Division Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerVishay Semiconductor Diodes Division
Datensätze 11.281
Seite 160/377
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A TO277A |
3.528 |
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FRED Pt® | Standard | 600V | 6A | 1.8V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 600V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A TO277A |
3.528 |
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FRED Pt® | Standard | 600V | 6A | 1.3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 58ns | 5µA @ 600V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 3.6A TO277A |
7.722 |
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Automotive, AEC-Q101 | Schottky | 120V | 3.6A (DC) | 620mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 8A 120V TO-277A |
6.048 |
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Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 120V | 8A | 840mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 2.5A DO201 |
8.748 |
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- | Standard | 1000V | 2.5A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A DO201AD |
4.752 |
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SUPERECTIFIER® | Standard | 50V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO201AD |
3.582 |
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SUPERECTIFIER® | Standard | 100V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO201AD |
7.434 |
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SUPERECTIFIER® | Standard | 200V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |
3.474 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 400V SOD-57 |
3.330 |
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- | Avalanche | 400V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 600V SOD-57 |
6.012 |
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- | Avalanche | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 800V SOD-57 |
5.976 |
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- | Avalanche | 800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 1000V SOD-57 |
2.682 |
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- | Avalanche | 1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 400V SOD-57 |
3.546 |
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- | Avalanche | 400V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 76pF @ 4V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 600V SOD-57 |
7.218 |
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- | Avalanche | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 800V SOD-57 |
6.030 |
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- | Avalanche | 800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 10A DO214AB |
8.658 |
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- | Standard | 400V | 10A | 1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 10µA @ 400V | 79pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 10A DO214AB |
2.358 |
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- | Standard | 600V | 10A | 1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 10µA @ 400V | 79pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 8A DO214AB |
5.940 |
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- | Standard | 400V | 8A | 985mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 10µA @ 400V | 79pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 10A TO277A |
7.524 |
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eSMP®, TMBS® | Schottky | 100V | 10A | 750mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 10A TO277A |
2.268 |
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eSMP®, TMBS® | Schottky | 100V | 10A | 750mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 8A TO277A |
6.804 |
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Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 100V | 8A | 750mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 8A TO277A |
5.256 |
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Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 100V | 8A | 750mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO214AB |
5.922 |
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- | Standard | 100V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3A DO214AB |
5.022 |
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- | Standard | 150V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
3.562 |
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- | Standard | 200V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO214AB |
6.750 |
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- | Standard | 100V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3A DO214AB |
8.802 |
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- | Standard | 150V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
3.762 |
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- | Standard | 200V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 1A DO213AB |
5.652 |
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- | Schottky | 20V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 110pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | GL41 (DO-213AB) | -55°C ~ 125°C |