Vishay Semiconductor Diodes Division Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerVishay Semiconductor Diodes Division
Datensätze 11.281
Seite 12/377
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.3KV 1A DO214BA |
188.880 |
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SUPERECTIFIER® | Standard | 1300V | 1A | 3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1300V | - | Surface Mount | DO-214BA | DO-214BA (GF1) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1.5A DO214AA |
41.053 |
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- | Standard | 600V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 17pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1A SOD57 |
195.186 |
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- | Avalanche | 600V | 1A | 2.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1500V 2A SOD57 |
220.986 |
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- | Avalanche | 1500V | 2A | 1.6V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 20µs | 3µA @ 1500V | - | Through Hole | SOD-57, Axial | SOD-57 | 140°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1.5KV 2A SOD57 |
181.884 |
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- | Avalanche | 1500V | 2A | 1.6V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 3µA @ 1200V | - | Through Hole | SOD-57, Axial | SOD-57 | 140°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1A SOD57 |
94.878 |
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- | Avalanche | 600V | 1A | 2.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 800MA SOD57 |
51.306 |
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- | Standard | 1400V | 800mA | 1.25V @ 400mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 2µA @ 1400V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A DO201AD |
53.556 |
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- | Standard | 200V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 5A DO201AD |
34.002 |
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- | Schottky | 50V | 5A | 650mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 2A DO214AA |
138.858 |
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- | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD |
244.740 |
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- | Standard | 1000V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 36pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A DO201AD |
36.372 |
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- | Standard | 800V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 36pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1000V 1A SOD57 |
815.988 |
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- | Avalanche | 1000V | 1A | 2.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1000V 1A SOD57 |
372.936 |
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- | Avalanche | 1000V | 1A | 2.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.3KV 1A DO214BA |
93.138 |
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SUPERECTIFIER® | Standard | 1300V | 1A | 3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1300V | - | Surface Mount | DO-214BA | DO-214BA (GF1) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2A SOD57 |
76.446 |
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- | Avalanche | 600V | 2A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 3A DO214AB |
302.280 |
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- | Schottky | 100V | 3A | 800mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 2A SOD57 |
195.576 |
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- | Avalanche | 100V | 2A | 1.07V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 500MA DO204 |
23.904 |
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SUPERECTIFIER® | Standard | 1200V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 5A DO214AB |
234.276 |
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- | Standard | 600V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 600V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 1.9A DO214AA |
211.266 |
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TMBS® | Schottky | 100V | 1.9A (DC) | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | 230pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 200V 1A DO214AA |
10.101 |
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- | Standard | 200V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1.6KV 800MA SOD57 |
51.012 |
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- | Avalanche | 1600V | 800mA | 1.25V @ 400mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 2µA @ 1600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 4A DO214AA |
659.394 |
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FRED Pt® | Standard | 600V | 4A | 1.3V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 39ns | 3µA @ 600V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 5A DO201AD |
88.026 |
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- | Schottky | 30V | 5A | 480mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 5A DO201AD |
92.304 |
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- | Schottky | 40V | 5A | 480mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 5A DO201AD |
50.040 |
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- | Schottky | 40V | 5A | 480mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 5A DO201AD |
23.820 |
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- | Schottky | 20V | 5A | 480mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A SOD57 |
185.292 |
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- | Avalanche | 200V | 2A | 1.07V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A SOD57 |
94.578 |
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- | Avalanche | 200V | 2A | 1.07V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |