Toshiba Semiconductor and Storage Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerToshiba Semiconductor and Storage
Datensätze 786
Seite 14/27
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Toshiba Semiconductor and Storage |
X35 PB-FREE POWER MOSFET TRANSIS |
4.374 |
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- | P-Channel | MOSFET (Metal Oxide) | 32V | 5.5A (Ta) | 4V, 10V | 35mOhm @ 3A, 10V | 2V @ 1mA | 34nC @ 10V | ±20V | 1760pF @ 10V | - | 2.14W (Ta) | 150°C (TJ) | Surface Mount | PS-8 | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 15A 8SOP |
5.508 |
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U-MOSVII | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 9mOhm @ 7.5A, 10V | 2.3V @ 200µA | 25nC @ 10V | ±20V | 1800pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
3.816 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 45V | 139A (Ta), 80A (Tc) | 4.5V, 10V | 2.8mOhm @ 40A, 10V | 2.4V @ 300µA | 39nC @ 10V | ±20V | 3.2nF @ 22.5V | - | 2.67W (Ta), 104W (Tc) | 175°C | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 13A 8TSON-ADV |
8.046 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 13A (Ta) | 6.5V, 10V | 14mOhm @ 6.5A, 10V | 4V @ 200µA | 15nC @ 10V | ±20V | 1300pF @ 30V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 20A 8TSON-ADV |
7.794 |
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U-MOSVIII | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 6.3mOhm @ 10A, 10V | 2.3V @ 200µA | 24nC @ 10V | ±20V | 1370pF @ 15V | - | 700mW (Ta), 19W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 7A 8SOP |
2.448 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 40V | 7A (Ta) | 4.5V, 10V | 25mOhm @ 3.5A, 10V | 2V @ 200µA | 34nC @ 10V | +20V, -25V | 1580pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 15A DPAK-3 |
4.644 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 40V | 15A (Ta) | 4.5V, 10V | 36mOhm @ 7.5A, 10V | 2V @ 100µA | 26nC @ 10V | ±20V | 1100pF @ 10V | - | 29W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 27A 8TSON-ADV |
4.176 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Tc) | 4.5V, 10V | 6mOhm @ 13.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | ±20V | 1400pF @ 15V | - | 700mW (Ta), 32W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A 8SOP |
3.276 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 16mOhm @ 5.5A, 10V | 2.3V @ 100µA | 15nC @ 10V | ±20V | 1100pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 20A DPAK-3 |
4.698 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta) | 4.5V, 10V | 29mOhm @ 10A, 10V | 2.3V @ 100µA | 15nC @ 10V | ±20V | 985pF @ 10V | - | 27W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 38A 8SOP |
7.470 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 38A (Tc) | 4.5V, 10V | 6mOhm @ 19A, 10V | 2.3V @ 200µA | 17nC @ 10V | ±20V | 1400pF @ 15V | - | 1.6W (Ta), 34W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 13A 8SOP |
8.892 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 11.6mOhm @ 6.5A, 10V | 2.3V @ 200µA | 20nC @ 10V | ±20V | 1350pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 23A 8TSON-ADV |
3.204 |
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U-MOSVIII | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta) | 4.5V, 10V | 4.2mOhm @ 11.5A, 10V | 2.3V @ 200µA | 24nC @ 10V | ±20V | 1370pF @ 15V | - | 700mW (Ta), 22W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 2A PW-MOLD |
5.472 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Ta) | 10V | 4.3Ohm @ 1A, 10V | 4.4V @ 1mA | 7nC @ 10V | ±30V | 280pF @ 25V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | PW-MOLD | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
4.986 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 66A (Ta), 45A (Tc) | 4.5V, 10V | 6.3mOhm @ 22.5A, 10V | 2.5V @ 500µA | 55nC @ 10V | ±20V | 4300pF @ 50V | - | 2.5W (Ta), 54W (Tc) | 150°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 60A DPAK-3 |
5.202 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 6.4mOhm @ 30A, 10V | 2.3V @ 500µA | 40nC @ 10V | ±20V | 2700pF @ 10V | - | 63W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 8A DPAK-3 |
8.694 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | 6V, 10V | 104mOhm @ 4A, 10V | 3V @ 1mA | 19nC @ 10V | +10V, -20V | 890pF @ 10V | - | 27W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 10A DPAK-3 |
5.436 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 40V | 10A (Ta) | 6V, 10V | 28mOhm @ 5A, 10V | 3V @ 1mA | 10nC @ 10V | ±20V | 410pF @ 10V | - | 25W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 8A DPAK-3 |
4.122 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | 6V, 10V | 54mOhm @ 4A, 10V | 3V @ 1mA | 10nC @ 10V | ±20V | 400pF @ 10V | - | 25W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 9A 8SOP |
8.856 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 40V | 9A (Ta) | 4.5V, 10V | 15mOhm @ 4.5A, 10V | 2V @ 500µA | 64nC @ 10V | +20V, -25V | 2900pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 3A DPAK-3 |
4.608 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 3A (Ta) | 10V | 3Ohm @ 1.5A, 10V | 4.4V @ 1mA | 7nC @ 10V | ±30V | 280pF @ 25V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 10A DPAK-3 |
8.244 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 40V | 10A (Ta) | 6V, 10V | 44mOhm @ 5A, 10V | 3V @ 1mA | 19nC @ 10V | +10V, -20V | 930pF @ 10V | - | 27W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 15A DPAK-3 |
3.744 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta) | 6V, 10V | 50mOhm @ 7.5A, 10V | 3V @ 1mA | 36nC @ 10V | +10V, -20V | 1770pF @ 10V | - | 41W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 20A DPAK-3 |
3.600 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta) | 6V, 10V | 22.2mOhm @ 10A, 10V | 3V @ 1mA | 37nC @ 10V | +10V, -20V | 1850pF @ 10V | - | 41W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 20A DPAK-3 |
4.014 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta) | 6V, 10V | 14mOhm @ 10A, 10V | 3V @ 1mA | 18nC @ 10V | ±20V | 820pF @ 10V | - | 38W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 20A DPAK-3 |
6.156 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Ta) | 6V, 10V | 29mOhm @ 10A, 10V | 3V @ 1mA | 18nC @ 10V | ±20V | 780pF @ 10V | - | 38W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 80V 24A SOP |
5.148 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 24A (Tc) | 10V | 12.3mOhm @ 12A, 10V | 4V @ 300µA | 22nC @ 10V | ±20V | 1900pF @ 40V | - | 1.6W (Ta), 48W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.8A DPAK |
3.436 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 5.8A (Ta) | 10V | 1.05Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | ±30V | 390pF @ 300V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 30A DPAK-3 |
4.626 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Ta) | 6V, 10V | 18Ohm @ 15A, 10V | 3V @ 1mA | 28nC @ 10V | ±20V | 1350pF @ 10V | - | 58W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 35A DPAK-3 |
7.398 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 40V | 35A (Ta) | 6V, 10V | 10.3mOhm @ 17.5A, 10V | 3V @ 1mA | 28nC @ 10V | ±20V | 1370pF @ 10V | - | 58W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |