Toshiba Semiconductor and Storage Gleichrichter - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Filter anzeigen
Filter zurücksetzen
Filter anwenden
KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerToshiba Semiconductor and Storage
Datensätze 225
Seite 4/8
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 500MA CST2 |
6.084 |
|
- | Schottky | 40V | 500mA | 810mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 15µA @ 40V | 28pF @ 0V, 1MHz | Surface Mount | SOD-882 | CST2 | 150°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 100MA SC2 |
5.130 |
|
- | Schottky | 30V | 100mA | 620mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 700µA @ 30V | 8.2pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | SC2 | 125°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 500MA USC |
8.928 |
|
- | Schottky | 40V | 500mA | 810mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 15µA @ 40V | 28pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 150°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 100MA SMINI |
2.430 |
|
- | Schottky | 40V | 100mA | 600mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 40V | 25pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 125°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1A USC |
2.988 |
|
- | Schottky | 40V | 1A | 670mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 40V | 74pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 150°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1A CST2B |
6.282 |
|
- | Schottky | 40V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 40V | 74pF @ 0V, 1MHz | Surface Mount | SOD-882 | CST2B | 150°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 1A CST2B |
5.580 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 135pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | CST2B | 125°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1A CST2B |
4.806 |
|
- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 40V | 120pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | CST2B | 125°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 1A SFLAT |
5.400 |
|
- | Standard | 400V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 100V 700MA SFLAT |
7.992 |
|
- | Standard | 100V | 700mA | 1.1V @ 700mA | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 700MA S-FLAT |
3.672 |
|
- | Standard | 400V | 700mA | 1.1V @ 700mA | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | 175°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 1A S-FLAT |
7.848 |
|
- | Standard | 400V | 1A | 1.1V @ 700mA | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 700MA SFLAT |
7.488 |
|
- | Standard | 400V | 700mA | 1.1V @ 700mA | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 600V 1A SFLAT |
6.930 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 600V 700MA SFLAT |
4.374 |
|
- | Standard | 600V | 700mA | 2V @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 600V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 800V 1A S-FLAT |
6.300 |
|
- | Standard | 800V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 1A M-FLAT |
2.772 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 500MA S-FLAT |
6.012 |
|
- | Standard | 200V | 500mA | 950mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A US-FLAT |
7.020 |
|
- | Schottky | 30V | 1A | 390mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 30V | 50pF @ 10V, 1MHz | Surface Mount | SC-76, SOD-323 | US-FLAT (1.25x2.5) | 150°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 1A US-FLAT |
2.502 |
|
- | Schottky | 20V | 1A | 450mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 20V | 40pF @ 10V, 1MHz | Surface Mount | SC-76, SOD-323 | US-FLAT (1.25x2.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 600V 1A M-FLAT |
4.608 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 1A US-FLAT |
3.186 |
|
- | Schottky | 20V | 1A | 370mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 40pF @ 10V, 1MHz | Surface Mount | SC-76, SOD-323 | US-FLAT (1.25x2.5) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 700MA US-FLAT |
2.448 |
|
- | Schottky | 40V | 700mA | 520mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 45pF @ 10V, 1MHz | Surface Mount | SC-76, SOD-323 | US-FLAT (1.25x2.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 700MA US-FLAT |
4.248 |
|
- | Schottky | 60V | 700mA | 580mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | 38pF @ 10V, 1MHz | Surface Mount | SC-76, SOD-323 | US-FLAT (1.25x2.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 1A M-FLAT |
8.424 |
|
- | Standard | 400V | 1A | - | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | - | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | - |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 1A MFLAT |
5.184 |
|
- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A S-FLAT |
4.032 |
|
- | Schottky | 30V | 1A | 360mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | 82pF @ 10V, 1MHz | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A S-FLAT |
8.640 |
|
- | Schottky | 30V | 1.5A | 460mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 30V | 50pF @ 10V, 1MHz | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A S-FLAT |
6.354 |
|
- | Schottky | 30V | 1.5A | 400mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | 82pF @ 10V, 1MHz | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1.5A S-FLAT |
4.356 |
|
- | Schottky | 40V | 1.5A | 550mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 40V | 35pF @ 10V, 1MHz | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |