Toshiba Semiconductor and Storage Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerToshiba Semiconductor and Storage
Datensätze 225
Seite 1/8
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Auf Lager |
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 100MA SC76-2 |
4.303.746 |
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- | Standard | 80V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 500nA @ 80V | 3pF @ 0V, 1MHz | Surface Mount | SC-76A | SC-76-2 | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 200MA |
2.283.354 |
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- | Schottky | 30V | 200mA | 280mV @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 30V | 17pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A USC |
987.474 |
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- | Schottky | 30V | 1A | 230mV @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 135pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A SFLAT |
696.738 |
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- | Schottky | 30V | 1A | 360mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 30V | 40pF @ 10V, 1MHz | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1A SFLAT |
277.764 |
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- | Schottky | 40V | 1A | 510mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 47pF @ 10V, 1MHz | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A SFLAT |
588.168 |
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- | Schottky | 30V | 1.5A | 460mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | 90pF @ 10V, 1MHz | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A SFLAT |
1.313.340 |
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- | Schottky | 30V | 1.5A | 360mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | 90pF @ 10V, 1MHz | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 1A SFLAT |
1.056.204 |
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- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 2A MFLAT |
606.744 |
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- | Schottky | 30V | 2A | 370mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 30V | 130pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 3A MFLAT |
1.738 |
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- | Schottky | 30V | 3A | 370mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 30V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 5A MFLAT |
3.440 |
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- | Schottky | 30V | 5A | 450mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 30V | 330pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 5A MFLAT |
981.450 |
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- | Schottky | 30V | 5A | 370mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 30V | 330pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 200MA ESC |
74.880 |
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- | Schottky | 30V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 30µA @ 30V | 26pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | ESC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 100MA SC79 |
77.298 |
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- | Standard | 80V | 100mA | 1.3V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 10nA @ 80V | 6pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | SC-79 | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 100MA CST2 |
358.638 |
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- | Standard | 80V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 1.6ns | 500nA @ 80V | 0.5pF @ 0V, 1MHz | Surface Mount | SOD-882 | CST2 | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 100MA SOD923 |
270.894 |
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- | Standard | 80V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 1.6ns | 500nA @ 80V | 0.3pF @ 0V, 1MHz | Surface Mount | SOD-923 | SOD-923 | -55°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 100MA FSC |
86.100 |
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- | Schottky | 30V | 100mA | 500mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 50µA @ 30V | 15pF @ 0V, 1MHz | Surface Mount | 2-SMD, Flat Lead | fSC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 100MA ESC |
69.486 |
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- | Standard | 80V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 500nA @ 80V | 3pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | ESC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 10V 100MA SC76 |
67.602 |
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- | Schottky | 10V | 100mA | 500mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 20µA @ 10V | 40pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | - | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 100MA SMINI |
98.802 |
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- | Standard | 80V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 500nA @ 80V | 3pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 50MA SOD882 |
74.238 |
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- | Schottky | 20V | 50mA | 550mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | - | 500nA @ 20V | 3.9pF @ 0V, 1MHz | Surface Mount | SOD-882 | SOD-882 | -55°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 500MA CST2 |
216.834 |
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- | Schottky | 30V | 500mA | 340mV @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 10V | 55pF @ 0V, 1MHz | Surface Mount | SOD-882 | CST2 | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 100MA SL2 |
237.690 |
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- | Schottky | 30V | 100mA | 500mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 50µA @ 30V | 9.02pF @ 2V, 1MHz | Surface Mount | 0201 (0603 Metric) | SL2 | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 50MA ESC |
29.460 |
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- | Schottky | 20V | 50mA | 550mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | - | 500nA @ 20V | 3.9pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | ESC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 500MA USC |
21.816 |
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- | Schottky | 30V | 500mA | 470mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 20V | - | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 500MA USC |
122.724 |
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- | Schottky | 40V | 500mA | 350mV @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 10V | 42pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 100MA USC |
21.702 |
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- | Standard | 200V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 60ns | 1µA @ 200V | 3pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1A USC |
112.284 |
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- | Schottky | 40V | 1A | 400mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 40V | 120pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A |
27.228 |
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- | Schottky | 30V | 1.5A | 400mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 200pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
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Toshiba Semiconductor and Storage |
X34 HIGH FREQUENCY SCHOTTKY BARR |
83.082 |
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- | Schottky | 10V | 10mA (DC) | - | Small Signal =< 200mA (Io), Any Speed | - | 25µA @ 500mV | 0.25pF @ 200mV, 1MHz | Surface Mount | 0201 (0603 Metric) | SL2 | 125°C (Max) |