Texas Instruments Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Hersteller
Datensätze 276
Seite 10/10
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Texas Instruments |
MOSFET P-CH 20V 2.2A 6DSBGA |
7.002 |
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NexFET™ | P-Channel | MOSFET (Metal Oxide) | 20V | 2.2A (Tc) | 1.5V, 4.5V | 75mOhm @ 1A, 4.5V | 1V @ 250µA | 2.5nC @ 4.5V | ±8V | 270pF @ 10V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-DSBGA (1x1.5) | 6-UFBGA, DSBGA |
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Texas Instruments |
MOSFET P-CH 20V 60A 8-SON |
4.014 |
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NexFET™ | P-Channel | MOSFET (Metal Oxide) | 20V | 14A (Ta), 60A (Tc) | 2.5V, 4.5V | 11.7mOhm @ 10A, 4.5V | 1.2V @ 250µA | 12.3nC @ 4.5V | ±12V | 1400pF @ 10V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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Texas Instruments |
MOSFET P-CH 20V 5A 6SON |
6.228 |
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NexFET™ | P-Channel | MOSFET (Metal Oxide) | 20V | 5A (Tc) | 1.8V, 4.5V | 49mOhm @ 3A, 4.5V | 900mV @ 250µA | 3.4nC @ 4.5V | ±8V | 350pF @ 10V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-SON | 6-SMD, Flat Leads |
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Texas Instruments |
MOSFET N-CH 25V 100A 8SON |
7.038 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 33A (Ta), 100A (Tc) | 3V, 8V | 2mOhm @ 30A, 8V | 1.4V @ 250µA | 25nC @ 4.5V | +10V, -8V | 4000pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET P-CH 20V 4A 9DSBGA |
4.662 |
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NexFET™ | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.8V, 4.5V | 40mOhm @ 2A, 4.5V | 1.1V @ 250µA | 5.6nC @ 4.5V | -6V | 510pF @ 10V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 9-DSBGA | 9-UFBGA, DSBGA |
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Texas Instruments |
MOSFET P-CH 20V 3A 6DSBGA |
8.442 |
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NexFET™ | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Tc) | 1.8V, 4.5V | 58mOhm @ 1.5A, 4.5V | 1V @ 250µA | 4.3nC @ 4.5V | ±8V | 435pF @ 10V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-DSBGA (1x1.5) | 6-UFBGA, DSBGA |