Taiwan Semiconductor Corporation Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerTaiwan Semiconductor Corporation
Datensätze 5.388
Seite 81/180
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 5A DO201AD |
3.924 |
|
- | Schottky | 50V | 5A | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 5A DO201AD |
6.336 |
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- | Schottky | 60V | 5A | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 4A DO214AB |
5.364 |
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- | Standard | 200V | 4A | - | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 65pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 4A DO214AB |
8.604 |
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- | Standard | 400V | 4A | - | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 65pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 4A DO214AB |
6.336 |
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- | Standard | 600V | 4A | - | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 65pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 12A DO214AB |
8.226 |
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- | Standard | 400V | 12A | - | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 400V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 12A DO214AB |
6.030 |
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- | Standard | 600V | 12A | - | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 600V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 12A DO214AB |
6.768 |
|
- | Standard | 800V | 12A | - | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 800V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 12A DO214AB |
7.560 |
|
- | Standard | - | 12A | - | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 3A DO214AC |
6.498 |
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- | Schottky | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 3A DO214AC |
7.740 |
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Automotive, AEC-Q101 | Schottky | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 4A DO214AB |
3.708 |
|
- | Standard | 50V | 4A | 1.15V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 50V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 4A DO214AB |
8.388 |
|
- | Standard | 100V | 4A | 1.15V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 100V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 3A 100V DO-214AB |
8.748 |
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- | Schottky | 100V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 3A 90V DO-214AB |
3.042 |
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- | Schottky | 90V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO214AB |
3.384 |
|
Automotive, AEC-Q101 | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 10µA @ 400V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 5A DO201AD |
4.428 |
|
- | Schottky | 90V | 5A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 5A DO201AD |
4.680 |
|
- | Schottky | 100V | 5A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 3A DO214AA |
7.668 |
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- | Schottky | 20V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 3A DO214AA |
3.348 |
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- | Schottky | 30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 3A DO214AA |
7.920 |
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- | Schottky | 50V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 3A DO214AA |
2.160 |
|
- | Schottky | 90V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 3A DO214AB |
6.714 |
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- | Standard | 300V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO214AB |
4.194 |
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- | Standard | 400V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 5A DO201AD |
7.074 |
|
Automotive, AEC-Q101 | Schottky | 50V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 5A DO201AD |
2.934 |
|
Automotive, AEC-Q101 | Schottky | 30V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 5A DO201AD |
8.442 |
|
Automotive, AEC-Q101 | Schottky | 40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 5A DO201AD |
8.532 |
|
Automotive, AEC-Q101 | Schottky | 50V | 5A | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 5A DO201AD |
7.794 |
|
Automotive, AEC-Q101 | Schottky | 60V | 5A | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 3A DO214AB |
3.636 |
|
- | Standard | 800V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 10µA @ 800V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |