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Taiwan Semiconductor Corporation Gleichrichter - Single

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerTaiwan Semiconductor Corporation
Datensätze 5.388
Seite 79/180
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Diodentyp
Spannung - DC-Rückwärtsgang (Vr) (max.)
Current - Average Rectified (Io)
Spannung - Vorwärts (Vf) (Max) @ If
Geschwindigkeit
Reverse Recovery Time (trr)
Strom - Umkehrleckage @ Vr
Kapazität @ Vr, F.
Montagetyp
Paket / Fall
Lieferantengerätepaket
Betriebstemperatur - Verbindungsstelle
S3AHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
3.598
Automotive, AEC-Q101
Standard
50V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 50V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S3B R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
4.752
-
Standard
100V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 100V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S3BHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
7.398
Automotive, AEC-Q101
Standard
100V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 100V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S3DHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
8.172
Automotive, AEC-Q101
Standard
200V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 200V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S3GHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
7.038
Automotive, AEC-Q101
Standard
400V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 400V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S3JHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
4.194
Automotive, AEC-Q101
Standard
600V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 600V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S3KHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO214AB
8.478
Automotive, AEC-Q101
Standard
800V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 800V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S3MHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
8.100
Automotive, AEC-Q101
Standard
-
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 1000V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
LL5819 L0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 1A MELF
2.772
-
Schottky
40V
1A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
110pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 125°C
MUR190HR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 900V 1A DO204AC
2.376
Automotive, AEC-Q101
Standard
900V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 900V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 175°C
LL5817 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A MELF
4.212
-
Schottky
20V
1A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
110pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 125°C
LL5818 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A MELF
3.490
-
Schottky
30V
1A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
110pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 125°C
LSR102 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A MELF
6.192
-
Schottky
20V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
110pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 125°C
LSR103 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A MELF
8.640
-
Schottky
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
110pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 125°C
LSR104 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 1A MELF
7.326
-
Schottky
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
110pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 125°C
LSR105 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 1A MELF
2.430
-
Schottky
50V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 50V
80pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 150°C
LSR106 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 1A MELF
7.056
-
Schottky
60V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 60V
80pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 150°C
S4J M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
3.492
-
Standard
600V
4A
1.15V @ 4A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
100µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
RS3J M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
2.538
-
Standard
600V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
10µA @ 600V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
MUR340S V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
6.768
-
Standard
400V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR360S V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
3.006
-
Standard
600V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 600V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
SR502 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 5A DO201AD
4.788
-
Schottky
20V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
SR502 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 5A DO201AD
5.742
-
Schottky
20V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
SK310AHM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 3A DO214AC
2.610
Automotive, AEC-Q101
Schottky
100V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK315AHM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 3A DO214AC
2.016
Automotive, AEC-Q101
Schottky
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RS3A R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
5.256
-
Standard
50V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 50V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
RS3D R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
2.466
-
Standard
200V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 200V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
RS3G R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
3.870
-
Standard
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 400V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
RS3JHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
2.016
Automotive, AEC-Q101
Standard
600V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
10µA @ 600V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
UG2DHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO204AC
4.752
Automotive, AEC-Q101
Standard
200V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C