Taiwan Semiconductor Corporation Gleichrichter - Single

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Diodentyp

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Spannung - DC-Rückwärtsgang (Vr) (max.)

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Spannung - Vorwärts (Vf) (Max) @ If

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Geschwindigkeit

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Reverse Recovery Time (trr)

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Strom - Umkehrleckage @ Vr

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Kapazität @ Vr, F.

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Montagetyp

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single

HerstellerTaiwan Semiconductor Corporation

Datensätze 5.388

Seite 166/180

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Diodentyp	Spannung - DC-Rückwärtsgang (Vr) (max.)	Current - Average Rectified (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Recovery Time (trr)	Strom - Umkehrleckage @ Vr	Kapazität @ Vr, F.	Montagetyp	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Verbindungsstelle
SRAF890 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 8A ITO220AC	4.068	-	Schottky	90V	8A	850mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 90V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SRAF890HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 8A ITO220AC	3.870	Automotive, AEC-Q101	Schottky	90V	8A	850mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 90V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
UG12JHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 12A TO220AC	8.064	Automotive, AEC-Q101	Standard	600V	12A	2V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
UG5JHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A TO220AC	6.624	Automotive, AEC-Q101	Standard	600V	5A	3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	30µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
UG8JHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A TO220AC	4.608	Automotive, AEC-Q101	Standard	600V	8A	2.9V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	30µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
UGF12J C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 12A ITO220AC	8.208	-	Standard	600V	12A	2V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 600V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
UGF5JHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A ITO220AC	5.148	Automotive, AEC-Q101	Standard	600V	5A	3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	30µA @ 600V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
UGF8JDHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A ITO220AC	4.626	Automotive, AEC-Q101	Standard	600V	8A	2.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 600V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
1N4001G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	7.578	-	Standard	50V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4001GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	7.614	Automotive, AEC-Q101	Standard	50V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4002G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	6.462	-	Standard	100V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4002GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	4.644	Automotive, AEC-Q101	Standard	100V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4003G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	4.140	-	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4003GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	8.298	Automotive, AEC-Q101	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4004G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	3.060	-	Standard	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4004GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	8.658	Automotive, AEC-Q101	Standard	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4005GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	3.114	Automotive, AEC-Q101	Standard	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4006G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	4.698	-	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4006GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	3.240	Automotive, AEC-Q101	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4007G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	8.442	-	Standard	1000V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4007GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	6.354	Automotive, AEC-Q101	Standard	1000V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4933G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	2.466	-	Standard	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4933GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	5.760	Automotive, AEC-Q101	Standard	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4934G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	6.966	-	Standard	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4934GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	7.380	Automotive, AEC-Q101	Standard	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4935G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	5.706	-	Standard	200V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4935GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	2.988	Automotive, AEC-Q101	Standard	200V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4936G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	2.100	-	Standard	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4936GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	2.106	Automotive, AEC-Q101	Standard	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4937G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	8.514	-	Standard	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C

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