Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 898/999
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET P-CH 12V SC-89 |
4.302 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | - | 1.2V, 4.5V | 640mOhm @ 400mA, 4.5V | 800mV @ 250µA | 4nC @ 4.5V | ±5V | 62pF @ 6V | - | 190mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
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Vishay Siliconix |
MOSFET P-CH 8V 9A PWRPACK |
8.730 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 8V | 9A (Tc) | 1.2V, 4.5V | 32mOhm @ 3A, 4.5V | 1V @ 250µA | 18.5nC @ 5V | ±5V | 878pF @ 4V | - | 2.4W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-75-6L Single | PowerPAK® SC-75-6L |
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Infineon Technologies |
MOSFET N-CH 60V 16A 8-PQFN |
4.464 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Ta), 89A (Tc) | 10V | 6.7mOhm @ 50A, 10V | 4V @ 100µA | 60nC @ 10V | ±20V | 2490pF @ 25V | - | 3.6W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 130A 8HVSON |
8.046 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 130A (Tc) | 4.5V, 10V | 1.82mOhm @ 39A, 4.5V | - | 257nC @ 10V | ±20V | 10850pF @ 10V | - | 1.5W (Ta), 83W (Tc) | 150°C (TJ) | Surface Mount | 8-HVSON (5.4x5.15) | 8-PowerVDFN |
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NXP |
MOSFET N-CH 40V 24A LFPAK |
8.388 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 24A (Tc) | 4.5V, 10V | 23mOhm @ 5A, 10V | 1.95V @ 1mA | 8.4nC @ 10V | ±20V | 520pF @ 20V | - | 25W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Microchip Technology |
MOSFET N-CH 25V 8PDFN |
4.968 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 60A (Tc) | 4.5V, 10V | 6mOhm @ 20A, 10V | 1.7V @ 250µA | 14nC @ 4.5V | +10V, -8V | 890pF @ 12.5V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3x3) | 8-PowerTDFN |
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Microchip Technology |
MOSFET N-CH 25V 8PDFN |
6.858 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 1.6V @ 250µA | 15nC @ 4.5V | +10V, -8V | 1040pF @ 12.5V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Microchip Technology |
MOSFET N-CH 25V 100A 8PDFN |
3.474 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 1.6V @ 250µA | 22nC @ 4.5V | +10V, -8V | 1635pF @ 12.5V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Microchip Technology |
MOSFET N-CH 25V 8PDFN |
5.382 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 2.3mOhm @ 25A, 10V | 1.6V @ 250µA | 29nC @ 4.5V | +10V, -8V | 2310pF @ 12.5V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Microchip Technology |
MOSFET N-CH 25V 100A 8PDFN |
3.474 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 3.3V, 10V | 1.9mOhm @ 25A, 10V | 1.6V @ 250µA | 37nC @ 4.5V | +10V, -8V | 2925pF @ 12.5V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N CH 650V 9A ITO-220AB |
7.416 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 1.3Ohm @ 4.5A, 10V | 5V @ 250µA | 39nC @ 10V | ±30V | 2310pF @ 25V | - | 13W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Diodes Incorporated |
MOSFET N CH 650V 4A TO220-3 |
2.484 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 3Ohm @ 2A, 10V | 5V @ 250µA | 13.5nC @ 10V | ±30V | 900pF @ 25V | - | 2.19W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET P CH 30V 3.3A MICRO 2X2 |
6.894 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 3.3A (Ta) | 4.5V, 10V | 87mOhm @ 3.3A, 10V | 3V @ 250µA | 10nC @ 10V | ±25V | 435pF @ 15V | Schottky Diode (Isolated) | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
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NXP |
MOSFET N-CH 30V 120A D2PAK |
3.418 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 120A (Tc) | 10V | 1.45mOhm @ 25A, 10V | 4V @ 1mA | 130nC @ 10V | ±20V | 9580pF @ 25V | - | 324W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 30V 120A D2PAK |
2.016 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 120A (Tc) | 5V, 10V | 1.3mOhm @ 25A, 10V | 2.1V @ 1mA | 93.4nC @ 5V | ±10V | 14500pF @ 25V | - | 324W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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GeneSiC Semiconductor |
TRANS SJT 1200V 5A |
4.896 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 5A (Tc) | - | 280mOhm @ 5A | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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GeneSiC Semiconductor |
TRANS SJT 1.2KV 10A |
7.020 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 10A (Tc) | - | 140mOhm @ 10A | - | - | - | - | - | 170W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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GeneSiC Semiconductor |
TRANS SJT 1.2KV 20A |
2.862 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 20A (Tc) | - | 70mOhm @ 20A | - | - | - | - | - | 282W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 60V 0.115A SOT23 |
3.420 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Ta) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50pF @ 25V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 50V 0.22A SOT23 |
5.976 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 220mA (Ta) | 4.5V, 10V | 3.5Ohm @ 220mA, 10V | 1.5V @ 1mA | 2.4nC @ 10V | ±20V | 27pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 20V 3A 6-MICROFET |
7.902 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 1.8V, 4.5V | 120mOhm @ 3A, 4.5V | 1.3V @ 250µA | 6nC @ 4.5V | ±8V | 435pF @ 10V | Schottky Diode (Isolated) | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | MicroFET 2x2 Thin | 6-UDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 12V 2A SC70-6 |
5.076 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 12V | 2A (Ta) | 1.8V, 4.5V | 110mOhm @ 2A, 4.5V | 1.5V @ 250µA | 7nC @ 4.5V | ±8V | 477pF @ 6V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-88 (SC-70-6) | 6-TSSOP, SC-88, SOT-363 |
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ON Semiconductor |
MOSFET P-CH 20V 2.7A 4-WLCSP |
5.562 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 2.7A (Ta) | 1.5V, 4.5V | 134mOhm @ 2A, 4.5V | 1.2V @ 250µA | 8.2nC @ 4.5V | ±8V | 525pF @ 10V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-WLCSP (0.8x0.8) | 4-XFBGA, WLCSP |
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ON Semiconductor |
MOSFET N-CH 100V 3.3A POWER33 |
7.884 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 3.3A (Ta), 7.5A (Tc) | 4.5V, 10V | 103mOhm @ 3.3A, 10V | 2.2V @ 250µA | 6nC @ 10V | ±20V | 310pF @ 50V | - | 2.3W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 25V 24A 8-PQFN |
2.016 |
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PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 24A (Ta), 60A (Tc) | 4.5V, 10V | 2.8mOhm @ 24A, 10V | 2.2V @ 1mA | 425nC @ 10V | ±12V | 2825pF @ 13V | - | 2.5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A DPAK |
5.436 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 340mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | ±30V | 890pF @ 300V | Super Junction | 100W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A IPAK |
3.490 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 340mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | ±30V | 890pF @ 300V | Super Junction | 100W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Vishay Siliconix |
MOSFET N-CH 60V 115MA SOT23 |
7.128 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Ta) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50pF @ 25V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 115MA SOT23 |
3.564 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Ta) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50pF @ 25V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236 | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 3A 4WLCSP |
3.562 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 3A (Ta) | 2.5V, 10V | 41mOhm @ 1.5A, 10V | 1.3V @ 250µA | 40nC @ 10V | ±12V | 1327pF @ 15V | - | 550mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-AlphaDFN (1.57x1.57) | 4-SMD, No Lead |