Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 897/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET P-CH 150V 27A D2PAK |
12.347 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 2210pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N CH 55V 16A DPAK |
3.834 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 16A (Tc) | 4.5V, 10V | 58mOhm @ 9.6A, 10V | 3V @ 250µA | 9.9nC @ 5V | ±16V | 380pF @ 25V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET NCH 55V 5A SOT223 |
4.716 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 5A (Ta) | 4.5V, 10V | 60mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | ±16V | 380pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N CH 55V 16A SOT 223 |
2.718 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 16A (Tc) | 4.5V, 10V | 58mOhm @ 9.6A, 10V | 3V @ 250µA | 9.9nC @ 5V | ±16V | 380pF @ 25V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 5.2A SOT223 |
2.340 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 5.2A (Ta) | 4V, 10V | 40mOhm @ 3.8A, 10V | 2V @ 250µA | 48nC @ 10V | ±16V | 870pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N CH 40V 195A TO220AB |
6.462 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | ±20V | 7330pF @ 25V | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 55V 42A D2PAK |
3.816 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 3500pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 38A D2PAK |
6.246 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 38A (Tc) | 10V | 60mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 2780pF @ 25V | - | 3.1W (Ta), 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 35A DIRECTFET |
2.070 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 35A (Ta), 184A (Tc) | 10V | 1.6mOhm @ 109A, 10V | 4V @ 250µA | 194nC @ 10V | ±20V | 7471pF @ 25V | - | 3.3W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L6 | DirectFET™ Isometric L6 |
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Infineon Technologies |
MOSFET N-CH 40V 31A DIRECTFET |
8.694 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 31A (Ta), 156A (Tc) | 10V | 1.9mOhm @ 94A, 10V | 4V @ 150µA | 134nC @ 10V | ±20V | 5469pF @ 25V | - | 3.3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L6 | DirectFET™ Isometric L6 |
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Infineon Technologies |
MOSFET N CH 75V 56A IPAK |
7.650 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 56A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | ±20V | 3070pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | I-PAK (LF701) | TO-252-4, DPak (3 Leads + Tab) |
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Infineon Technologies |
MOSFET 30V 25A POWER 8-SO |
8.460 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET 30V 25A POWER 8-SO |
3.294 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 250V 57A TO247AC |
6.570 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 57A (Tc) | 10V | 33mOhm @ 35A, 10V | 5V @ 250µA | 150nC @ 10V | ±30V | 5860pF @ 25V | - | 360W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N CH 75V 56A IPAK |
7.470 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 56A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | ±20V | 3070pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N CH 75V 56A I-PAK |
8.172 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 56A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | ±20V | 3070pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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GeneSiC Semiconductor |
TRANS SJT 1200V 3A TO-247AB |
2.556 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 3A (Tc) (95°C) | - | 460mOhm @ 3A | - | - | - | - | - | 15W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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GeneSiC Semiconductor |
TRANS SJT 1200V 6A TO-247AB |
4.194 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 6A (Tc) (90°C) | - | 220mOhm @ 6A | - | - | - | - | - | - | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3 |
6.660 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 3.5mOhm @ 90A, 10V | 2.2V @ 93µA | 79nC @ 4.5V | ±20V | 13000pF @ 30V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 80V 90A TO252-3 |
5.166 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 90A (Tc) | 6V, 10V | 5.3mOhm @ 90A, 10V | 3.5V @ 90µA | 69nC @ 10V | ±20V | 4750pF @ 40V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 35A TO252-3 |
5.400 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 25mOhm @ 35A, 10V | 4V @ 39µA | 31nC @ 10V | ±20V | 2070pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A TO252-3 |
7.092 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4.5V, 10V | 13mOhm @ 30A, 10V | 2V @ 80µA | 69nC @ 10V | ±20V | 1800pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A TO252-3 |
4.320 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4.5V, 10V | 23mOhm @ 22A, 10V | 2V @ 50µA | 42nC @ 10V | ±20V | 1091pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 7A TO252 |
2.412 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 7A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 4V @ 1mA | 31.5nC @ 10V | ±20V | 530pF @ 25V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 120V 88A TO-220 |
6.624 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 120V | 88A (Tc) | 10V | 9.4mOhm @ 21A, 10V | 4V @ 1mA | 52nC @ 10V | ±20V | 3100pF @ 60V | - | 140W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO-220SIS |
5.994 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 1.5mA | 43nC @ 10V | ±30V | 1350pF @ 300V | Super Junction | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 30V 14A PQFN |
5.274 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 40A (Tc) | 4.5V, 10V | 7.8mOhm @ 12A, 10V | 2.35V @ 25µA | 16nC @ 10V | ±20V | 1050pF @ 25V | - | 2.5W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (3x3) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N CH 600V 20A TO-263AB |
2.016 |
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Automotive, AEC-Q101, SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 195mOhm @ 20A, 10V | 5V @ 250µA | 102nC @ 10V | ±30V | 2035pF @ 25V | - | 405W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO-3P(N) |
2.214 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | ±30V | 1350pF @ 300V | Super Junction | 130W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N CH 100V 39A TO-220AB |
5.238 |
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Automotive, AEC-Q101, UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 39A (Tc) | 4.5V, 10V | 35mOhm @ 39A, 10V | 3V @ 250µA | 67nC @ 10V | ±16V | 1820pF @ 25V | - | 145W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |