Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 835/999
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET N-CH 30V 9A IPAK |
4.014 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 58A (Tc) | 4.5V, 11.5V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 25nC @ 11.5V | ±20V | 1456pF @ 12V | - | 1.3W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 30V 9A IPAK |
4.194 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 58A (Tc) | 4.5V, 11.5V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 25nC @ 11.5V | ±20V | 1456pF @ 12V | - | 1.3W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 9A IPAK |
3.492 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 58A (Tc) | 4.5V, 11.5V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 44nC @ 11.5V | ±20V | 2155pF @ 12V | - | 1.3W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 30V 9A IPAK |
8.388 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 58A (Tc) | 4.5V, 11.5V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 44nC @ 11.5V | ±20V | 2155pF @ 12V | - | 1.3W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 9A TP-FA |
2.340 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 58A (Tc) | 4.5V, 11.5V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 44nC @ 11.5V | ±20V | 2155pF @ 12V | - | 1.3W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 9A TP-FA |
5.382 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 58A (Tc) | 4.5V, 11.5V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 25nC @ 11.5V | ±20V | 1456pF @ 12V | - | 1.3W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 8.1A IPAK |
5.400 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.1A (Ta), 44A (Tc) | 4.5V, 10V | 9.6mOhm @ 30A, 10V | 2.5V @ 250µA | 16.2nC @ 10V | ±20V | 1035pF @ 12V | - | 1.1W (Ta), 35.7W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V SO-8FL |
7.272 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta), 171A (Tc) | 4.5V, 10V | 2mOhm @ 22A, 10V | 2.5V @ 1mA | 83.6nC @ 10V | ±20V | 5660pF @ 15V | - | 950mW (Ta), 96.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V SO-8FL |
4.608 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 13.2A (Ta), 117A (Tc) | 4.5V, 10V | 3mOhm @ 30A, 10V | 2.5V @ 1mA | 49.5nC @ 10V | ±20V | 3233pF @ 12V | - | 930mW (Ta), 73.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V SO-8FL |
6.318 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 12.7A (Ta), 100A (Tc) | 4.5V, 11.5V | 3.4mOhm @ 30A, 10V | 2.5V @ 250µA | 53nC @ 11.5V | ±20V | 3250pF @ 12V | - | 890mW (Ta), 55.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 100V 80A TO-220 |
6.750 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 13mOhm @ 76A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 4500pF @ 25V | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 30V 5A 8WDFN |
5.940 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta), 32A (Tc) | 4.5V, 11.5V | 20mOhm @ 20A, 10V | 3V @ 250µA | 16.6nC @ 10V | ±20V | 964pF @ 15V | - | 860mW (Ta), 33.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 30V 4.6A 8WDFN |
2.160 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 4.6A (Ta), 26A (Tc) | 4.5V, 11.5V | 24mOhm @ 20A, 10V | 3V @ 250µA | 10.8nC @ 10V | ±20V | 580pF @ 15V | - | 840mW (Ta), 27.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET P-CH 20V 10A 8SOIC |
2.088 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13A TO-220SIS |
5.130 |
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DTMOSII | N-Channel | MOSFET (Metal Oxide) | 650V | 13A (Ta) | 10V | 380mOhm @ 6.5A, 10V | 5V @ 1mA | 17nC @ 10V | ±30V | 950pF @ 10V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 4A TO-220SIS |
6.390 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Ta) | 10V | 1.7Ohm @ 2A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 1.2A UFM |
3.060 |
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π-MOSVI | N-Channel | MOSFET (Metal Oxide) | 20V | 1.2A (Ta) | 4V, 10V | 310mOhm @ 600mA, 10V | 2.3V @ 100µA | - | ±20V | 36pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH SGL 30V 0.1A SSM |
4.122 |
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π-MOSVI | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 7.8pF @ 3V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 2.9A TSM |
2.502 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 30V | 2.9A (Ta) | 4V, 10V | 83mOhm @ 1.5A, 10V | 2.6V @ 1mA | 3.3nC @ 4V | ±20V | 180pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.18A VESM |
7.632 |
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π-MOSVI | N-Channel | MOSFET (Metal Oxide) | 20V | 180mA (Ta) | 1.2V, 4V | 3Ohm @ 50mA, 4V | 1V @ 1mA | - | ±10V | 9.5pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 22A 8TSON |
3.330 |
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U-MOSV-H | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta) | 4.5V, 10V | 8.3mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | ±20V | 2500pF @ 10V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 22A 8TSON |
2.100 |
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U-MOSV-H | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta) | 4.5V, 10V | 8.3mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | ±20V | 2500pF @ 10V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 13A 8TSON |
3.852 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 16.9mOhm @ 6.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | ±20V | 1300pF @ 10V | - | 700mW (Ta), 22W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 26A 8TSON |
8.676 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 26A (Ta) | 4.5V, 10V | 6.4mOhm @ 13A, 10V | 2.3V @ 500µA | 35nC @ 10V | ±20V | 2900pF @ 10V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 22A 8TSON |
4.806 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta) | 4.5V, 10V | 8mOhm @ 11A, 10V | 2.3V @ 200µA | 27nC @ 10V | ±20V | 2200pF @ 10V | - | 700mW (Ta), 27W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 21A SBD 8TSON |
8.154 |
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U-MOSV-H | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 9.9mOhm @ 10.5A, 10V | 2.3V @ 1mA | 20nC @ 10V | ±20V | 1900pF @ 10V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 8.3A PS-8 |
4.698 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V, 10V | 8.5mOhm @ 4.2A, 10V | 2.5V @ 1mA | 26nC @ 10V | ±20V | 1270pF @ 10V | - | 840mW (Ta) | 150°C (TJ) | Surface Mount | PS-8 (2.9x2.4) | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 4.8A PS-8 |
5.472 |
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U-MOSIII-H | P-Channel | MOSFET (Metal Oxide) | 40V | 4.8A (Ta) | 4.5V, 10V | 40mOhm @ 2.4A, 10V | 2V @ 1mA | 19nC @ 10V | ±20V | 800pF @ 10V | - | 840mW (Ta) | 150°C (TJ) | Surface Mount | PS-8 (2.9x2.4) | 8-SMD, Flat Lead |
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IXYS |
MOSFET N-CH 500V 74A PLUS247 |
2.160 |
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HiPerFET™, PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 74A (Tc) | 10V | 77mOhm @ 500mA, 10V | 5V @ 4mA | 165nC @ 10V | ±30V | 9900pF @ 25V | - | 1400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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Renesas Electronics America |
MOSFET P-CH 30V 40A LFPAK |
5.724 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | - | 155nC @ 10V | +10V, -20V | 9500pF @ 10V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |