Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 599/999
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NXP |
MOSFET N-CH 55V 75A D2PAK |
7.488 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 7mOhm @ 25A, 10V | 2V @ 1mA | 45nC @ 5V | ±15V | 3960pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 40V 75A D2PAK |
3.582 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 8mOhm @ 25A, 10V | 4V @ 1mA | 36.6nC @ 10V | ±20V | 2020pF @ 25V | - | 157W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 30V 80A LFPAK |
5.364 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 2.5V @ 1mA | 21nC @ 5V | ±20V | 2010pF @ 10V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 55V 0.335A SOT23 |
7.668 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 335mA (Ta) | 1.8V, 4.5V | 4Ohm @ 500mA, 4.5V | 1.3V @ 1mA | 1nC @ 8V | ±10V | 40pF @ 10V | - | 830mW (Tc) | -65°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 55V 335MA SOT-23 |
8.514 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 335mA (Ta) | 1.8V, 4.5V | 4Ohm @ 500mA, 4.5V | 1.3V @ 1mA | 1nC @ 8V | ±10V | 40pF @ 10V | - | 830mW (Tc) | -65°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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NXP |
MOSFET N-CH 30V 830MA SOT323 |
6.030 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 830mA (Ta) | 1.8V, 4.5V | 480mOhm @ 200mA, 4.5V | 1V @ 250µA | 0.89nC @ 4.5V | ±8V | 43pF @ 25V | - | 560mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323-3 | SC-70, SOT-323 |
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Nexperia |
MOSFET N-CH 30V 13.8A 8-SOIC |
7.596 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 13.8A (Tc) | 4.5V, 10V | 20mOhm @ 8A, 10V | 2V @ 250µA | 10.7nC @ 5V | ±20V | 752pF @ 15V | - | 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET N-CH 20V 100A LFPAK |
5.544 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 100A (Tc) | 4.5V, 10V | 2.65mOhm @ 25A, 10V | 2V @ 1mA | 48.5nC @ 4.5V | ±20V | 4457pF @ 10V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH 30V 4.7A SOT-23 |
3.096 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 4.7A (Tc) | 4.5V, 10V | 55mOhm @ 2A, 10V | 2V @ 1mA | 9.4nC @ 10V | ±20V | 350pF @ 30V | - | 280mW (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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NXP |
MOSFET N-CH 20V 5.9A SOT-23 |
2.754 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 5.9A (Tc) | 2.5V, 4.5V | 37mOhm @ 1.5A, 4.5V | 1.5V @ 1mA | 5.8nC @ 4.5V | ±12V | 410pF @ 20V | - | 280mW (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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NXP |
MOSFET N-CH 20V 6.3A 6TSOP |
6.354 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 6.3A (Tc) | 1.8V, 4.5V | 28mOhm @ 2A, 4.5V | 700mV @ 1mA | 10.6nC @ 4.5V | ±8V | 740pF @ 10V | - | 1.75W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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NXP |
MOSFET N-CH 20V 6.3A 6TSOP |
5.022 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 6.3A (Tc) | 1.8V, 4.5V | 28mOhm @ 2A, 4.5V | 700mV @ 1mA | 10.6nC @ 4.5V | ±8V | 740pF @ 10V | - | 1.75W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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Vishay Siliconix |
MOSFET N-CH 100V 5.6A TO-220AB |
7.794 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 10V | 540mOhm @ 3.4A, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 4A TO-220AB |
5.328 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 4A (Tc) | 10V | 1.2Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | 200pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 200V 0.56A 4-DIP |
5.004 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 560mA (Ta) | 10V | 1.5Ohm @ 340mA, 10V | 4V @ 250µA | 15nC @ 10V | ±20V | 340pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-220AB |
8.856 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 1A 4-DIP |
5.940 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1A (Ta) | 10V | 540mOhm @ 600mA, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET P-CH 60V 600MA 4-DIP |
5.436 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 600mA (Ta) | - | 1.6Ohm @ 300mA, 10V | - | 15nC @ 15V | - | 250pF @ 25V | - | - | - | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 200V 600MA 4-DIP |
2.430 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 600mA (Ta) | 10V | 1.5Ohm @ 360mA, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET P-CH 100V 0.7A 4-DIP |
6.552 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 700mA (Ta) | 10V | 1.2Ohm @ 420mA, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | 200pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET P-CH 100V 1A 4-DIP |
3.582 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 1A (Ta) | 10V | 600mOhm @ 600mA, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET P-CH 200V 6.5A TO-220AB |
8.010 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 6.5A (Tc) | 10V | 800mOhm @ 3.9A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 700pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 3.3A TO-220AB |
7.758 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 3.3A (Tc) | 10V | 1.5Ohm @ 2A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 14A TO-220AB |
4.608 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | ±20V | 670pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 5.2A TO-220AB |
3.060 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 5.2A (Tc) | 10V | 800mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 50W (Tc) | -65°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A TO-220AB |
2.412 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 700pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 10A TO-220AB |
8.640 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1400pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 2.5A TO-220AB |
5.886 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | 360pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 4.5A TO-220AB |
4.914 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.7A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 610pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 3.3A TO-220AB |
2.088 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 3.3A (Tc) | 10V | 1.8Ohm @ 2A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 410pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |