Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 416/999
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 30V 10.9A 8-SOIC |
6.570 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 10.9A (Ta) | 4.5V, 10V | 24mOhm @ 7.8A, 10V | 2.5V @ 250µA | 12nC @ 10V | ±20V | 435pF @ 15V | - | 2.4W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 60V 320MA SOT23-3 |
7.326 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 320mA (Tc) | 4.5V, 10V | 1.3Ohm @ 500mA, 10V | 2.5V @ 250µA | 1.4nC @ 4.5V | ±20V | 24pF @ 30V | - | 500mW (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 38.3A 1212-8 |
6.696 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 38.3A (Tc) | 4.5V, 10V | 7.5mOhm @ 10A, 10V | 2.4V @ 250µA | 21.5nC @ 10V | +20V, -16V | 1000pF @ 15V | - | 3.2W (Ta), 19.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Rohm Semiconductor |
MOSFET P-CH 12V 4.5A TUMT6 |
8.730 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 4.5A (Ta) | 1.5V, 4.5V | 30mOhm @ 4.5A, 4.5V | 1V @ 1mA | 40nC @ 4.5V | -8V | 4200pF @ 6V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
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Diodes Incorporated |
MOSFET N-CH 20V 10A POWERDI5060 |
2.394 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta), 36A (Tc) | 2.5V, 4.5V | 12.5mOhm @ 9.4A, 4.5V | 1.3V @ 250µA | 11.6nC @ 4.5V | ±12V | 1091pF @ 10V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET NCH 60V 24A POWERDI |
3.726 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 24A (Tc) | 4.5V, 10V | 50mOhm @ 5.1A, 10V | 3V @ 250µA | 8.8nC @ 10V | ±20V | 584pF @ 25V | - | 1.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 24V 80A POWERDI5060 |
2.466 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 24V | 80A (Tc) | 2.5V, 10V | 5mOhm @ 20A, 10V | 1.45V @ 250µA | 53.7nC @ 10V | ±12V | 1683pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V POWERDI333 |
7.362 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 41A (Tc) | 4.5V, 10V | 16mOhm @ 20A, 10V | 2.5V @ 250µA | 15.1nC @ 10V | ±20V | 939pF @ 30V | - | 1.2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V POWERDI333 |
8.262 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 41A (Tc) | 4.5V, 10V | 16mOhm @ 20A, 10V | 2.5V @ 250µA | 15.1nC @ 10V | ±20V | 939pF @ 30V | - | 1.2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 1A SAWN ON FOIL |
7.614 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 1A (Tj) | 10V | 50mOhm @ 2A, 10V | 2.2V @ 250µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Diodes Incorporated |
MOSFET P-CH 30V 10.4A DFN2523-6 |
6.354 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 10.4A (Ta) | 4.5V, 10V | 14mOhm @ 9.5A, 10V | 3V @ 250µA | 90nC @ 10V | ±25V | 4414pF @ 15V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2523-6 | 6-PowerUDFN |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V TSOT26 |
3.816 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 60V | 7.3A (Ta) | 4.5V, 10V | 105mOhm @ 4.5A, 10V | 3V @ 250µA | 17.2nC @ 10V | ±20V | 969pF @ 30V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET BVDSS: 25V-30V SO-8 T&R 2 |
3.906 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 10.5A (Ta), 25A (Tc) | 4.5V, 10V | 12mOhm @ 11.5A, 10V | 3V @ 250µA | 57nC @ 10V | ±25V | 2714pF @ 15V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET N-CH 55V 32A DPAK |
4.896 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 32A (Tc) | 5V, 10V | 33mOhm @ 15A, 10V | 2V @ 1mA | 17.6nC @ 5V | ±15V | 1236pF @ 25V | - | 77W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 39.6A TSDSON-8 |
4.788 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 39.6A (Tc) | 6V, 10V | 18mOhm @ 20A, 10V | 3.1V @ 48µA | 30nC @ 10V | ±25V | 2220pF @ 15V | - | 2.1W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI333 |
5.274 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI333 |
7.020 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
MOSFET P-CH 20V 1.5A TSMT5 |
7.074 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 2.5V, 4.5V | 200mOhm @ 1.5A, 4.5V | 2V @ 1mA | 4.2nC @ 4.5V | ±12V | 325pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | 150°C (TJ) | Surface Mount | TSMT5 | SOT-23-5 Thin, TSOT-23-5 |
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Rohm Semiconductor |
MOSFET N-CH 600V 1.7A CPT3 |
3.132 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 1.7A (Tc) | 10V | 3.4Ohm @ 500mA, 10V | 4V @ 1mA | 6.5nC @ 10V | ±20V | 65pF @ 25V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 20V 3A 6-WLCSP |
3.546 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 1.5V, 4.5V | 85mOhm @ 1A, 4.5V | 1.5V @ 250µA | 13nC @ 4.5V | ±8V | 1065pF @ 10V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WLCSP (1.0x1.5) | 6-XFBGA, WLCSP |
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ON Semiconductor |
MOSFET N-CH 40V 77A |
7.740 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 18A (Ta), 77A (Tc) | 10V | 4.9mOhm @ 35A, 10V | 3.5V @ 50µA | 18nC @ 10V | ±20V | 1150pF @ 25V | - | 3.2W (Ta), 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 40V 77A |
6.660 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 18A (Ta), 77A (Tc) | 10V | 4.9mOhm @ 35A, 10V | 3.5V @ 50µA | 18nC @ 10V | ±20V | 1150pF @ 25V | - | 3.2W (Ta), 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 6A 1206-8 |
5.166 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 6A (Tc) | 4.5V, 10V | 24mOhm @ 4.8A, 10V | 2.3V @ 250µA | 32nC @ 10V | ±25V | 950pF @ 15V | - | 2.5W (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET™ | 8-SMD, Flat Lead |
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Rohm Semiconductor |
MOSFET P-CH 30V 2A TSMT5 |
5.004 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 135mOhm @ 2A, 10V | 2.5V @ 1mA | 3.4nC @ 5V | ±20V | 310pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | 150°C (TJ) | Surface Mount | TSMT5 | SOT-23-5 Thin, TSOT-23-5 |
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Vishay Siliconix |
MOSFET N-CH 30V 12A 8SO |
5.508 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 21mOhm @ 8.4A, 10V | 2.8V @ 250µA | 12nC @ 10V | ±25V | 405pF @ 15V | - | 2.4W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V TO252 T&R |
3.978 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 46.3A (Tc) | 6V, 10V | 23mOhm @ 20A, 10V | 4V @ 250µA | 21.4nC @ 10V | ±20V | 1544pF @ 50V | - | 2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
T6 40V SG NCH U8FL |
8.622 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 14A (Ta), 48A (Tc) | 10V | 8.5mOhm @ 15A, 10V | 3.5V @ 30µA | 10nC @ 10V | ±20V | 625pF @ 25V | - | 3.1W (Ta), 38W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V POWERDI333 |
2.826 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 41A (Tc) | 4.5V, 10V | 16mOhm @ 20A, 10V | 2.5V @ 250µA | 15.1nC @ 10V | ±20V | 939pF @ 30V | - | 1.17W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V POWERDI333 |
3.690 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 41A (Tc) | 4.5V, 10V | 16mOhm @ 20A, 10V | 2.5V @ 250µA | 15.1nC @ 10V | ±20V | 939pF @ 30V | - | 1.17W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 60V 9.4A T0252 |
7.128 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 9.4A (Tc) | 4.5V, 10V | 150mOhm @ 12A, 10V | 3V @ 250µA | 14nC @ 10V | ±20V | 708pF @ 30V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |