Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 292/999
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Teilenummer |
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Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 4A TO220 |
23.580 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 3Ohm @ 1.2A, 10V | 4V @ 250µA | 20nC @ 10V | ±30V | 955pF @ 25V | - | 38.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET NCH 80V 56A TO220F |
7.164 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 13.5A (Ta), 56A (Tc) | 6V, 10V | 6mOhm @ 20A, 10V | 3.3V @ 250µA | 63nC @ 10V | ±20V | 3142pF @ 40V | - | 2.2W (Ta), 37.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 3.7A TO220FP |
6.396 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 3.7A (Tc) | 10V | 1.4Ohm @ 1.85A, 10V | 4V @ 250µA | 4.5nC @ 10V | ±25V | 165pF @ 100V | - | 20W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 800V 2.5A IPAK |
7.740 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 2.5A (Tc) | 10V | 3.5Ohm @ 1A, 10V | 5V @ 100µA | 9.5nC @ 10V | 30V | 130pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 250V 2.7A D2PAK |
20.412 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 2.7A (Tc) | 10V | 2Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 3.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CH 600V 9A TO220FM |
9.264 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 535mOhm @ 2.8A, 10V | 5V @ 1mA | 16.5nC @ 10V | ±20V | 540pF @ 25V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 700V 8A TO251 |
16.044 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 4V @ 250µA | 12.6nC @ 10V | ±30V | 743pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 600V 9A TO-220AB |
8.910 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 450mOhm @ 4.5A, 10V | 4V @ 250µA | 16nC @ 10V | ±25V | 538pF @ 100V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO220FP-3 |
10.824 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19nC @ 10V | ±20V | 877pF @ 100V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 900V 4A TO220 |
18.120 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 4A (Tc) | 10V | 4Ohm @ 2A, 10V | 4V @ 250µA | 25nC @ 10V | ±30V | 955pF @ 25V | - | 38.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 90A TO220 |
6.312 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 90A (Tc) | 10V | 8.2mOhm @ 20A, 10V | 4V @ 500µA | 49nC @ 10V | ±20V | 3000pF @ 50V | - | 126W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 4.5A D2PAK |
21.432 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.7A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 610pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 400V 490MA 4-DIP |
6.720 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 490mA (Ta) | 10V | 1.8Ohm @ 210mA, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 410pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 900V 1.7A TO-220AB |
9.612 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 1.7A (Tc) | 10V | 8Ohm @ 1A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 490pF @ 25V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 58A TO-220AB |
6.840 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 58A (Tc) | 10V | 18.2mOhm @ 58A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 3500pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 400V 15A TO-220 |
8.208 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 400V | 15A (Tc) | 10V | 300mOhm @ 7.5A, 10V | 5V @ 250µA | 36nC @ 10V | ±30V | 1750pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V TO220SIS |
6.732 |
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π-MOSVIII | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Ta) | 10V | 1.7Ohm @ 3A, 10V | 4V @ 600µA | 32nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 5A DPAK |
17.280 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.7Ohm @ 3A, 10V | 4.5V @ 250µA | 24nC @ 10V | ±30V | 490pF @ 25V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 40V 100A I2PAK |
6.732 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.1mOhm @ 25A, 10V | 4V @ 1mA | 79nC @ 10V | ±20V | 6200pF @ 25V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 700V 8A TO262S |
17.808 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4V @ 250µA | 12.6nC @ 10V | ±30V | 743pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262S (I2PAK) | TO-262-3 Short Leads, I²Pak |
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Vishay Siliconix |
MOSFET N-CH 100V 9.7A TO220FP |
15.660 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 9.7A (Tc) | 10V | 160mOhm @ 5.8A, 10V | 4V @ 250µA | 33nC @ 10V | ±20V | 670pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 60V 24A TO262-3 |
10.248 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 24A (Ta), 100A (Tc) | 6V, 10V | 2.9mOhm @ 100A, 10V | 2.8V @ 75µA | 56nC @ 10V | ±20V | 4100pF @ 30V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 75V 80A TO220 |
17.568 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 8mOhm @ 40A, 10V | 4V @ 250µA | 91.5nC @ 10V | ±20V | 3905pF @ 30V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 100V 35A TO220 |
12.996 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 13.5mOhm @ 21A, 10V | 4V @ 100µA | 81nC @ 10V | ±20V | 2998pF @ 50V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 200V 1.8A D2PAK |
15.828 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 1.8A (Tc) | 10V | 3Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 170pF @ 25V | - | 3W (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CH 250V 10A TO-220FM |
11.256 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 10A (Ta) | 10V | - | - | - | ±30V | - | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 3A TO220 |
16.716 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4.2Ohm @ 1.5A, 10V | 4V @ 250µA | 19nC @ 10V | ±30V | 696pF @ 25V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 800V 2.5A TO220 |
17.556 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 2.5A (Tc) | 10V | 3.5Ohm @ 1A, 10V | 5V @ 100µA | 9.5nC @ 10V | 30V | 130pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 18A TO220 |
18.096 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 18A (Ta), 140A (Tc) | 6V, 10V | 3.5mOhm @ 20A, 10V | 3.2V @ 250µA | 90nC @ 10V | ±20V | 5650pF @ 30V | - | 2.1W (Ta), 268W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 60A TO220-3-31 |
9.060 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 10V | 5.7mOhm @ 60A, 10V | 4V @ 58µA | 82nC @ 10V | ±20V | 6600pF @ 30V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-31 Full Pack | TO-220-3 Full Pack |