Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 294/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET N-CH 500V 11A TO-220F |
7.404 |
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FRFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 550mOhm @ 5.5A, 10V | 4V @ 250µA | 55nC @ 10V | ±30V | 2055pF @ 25V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 250V 14A TO-220F |
8.556 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 110mOhm @ 7A, 10V | 5V @ 250µA | 65nC @ 10V | ±30V | 2450pF @ 25V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 9A TO220F |
20.964 |
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SuperMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 385mOhm @ 4.5A, 10V | 4V @ 250µA | 29nC @ 10V | ±30V | 1240pF @ 100V | - | 29.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 9A TO220-3 |
17.568 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 385mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22nC @ 10V | ±20V | 790pF @ 100V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 500V 13A I2PAK |
8.640 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 480mOhm @ 6.5A, 10V | 4V @ 250µA | 56nC @ 10V | ±30V | 2055pF @ 25V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 60V 17A D2PAK |
12.570 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 200V 3A TO220FP |
17.220 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 3A (Tc) | 10V | 1.5Ohm @ 1.8A, 10V | 4V @ 250µA | 15nC @ 10V | ±20V | 340pF @ 15V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
MOSFET N-CH 600V 11A TO-220 |
23.628 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 17nC @ 10V | ±25V | 580pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 15A TO220F |
18.684 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 290mOhm @ 7.5A, 10V | 4V @ 250µA | 17.2nC @ 10V | ±30V | 841pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 11A ITO220 |
17.796 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 20.5nC @ 10V | ±30V | 1040pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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ON Semiconductor |
MOSFET N-CH 100V 75A TO-220 |
17.364 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 9mOhm @ 75A, 10V | 4.5V @ 250µA | 116nC @ 10V | ±20V | 8225pF @ 25V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 13A ITO220 |
16.920 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 260mOhm @ 3.9A, 10V | 4V @ 250µA | 30nC @ 10V | ±30V | 1273pF @ 100V | - | 32.1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
N-CHANNEL 600 V, 105 MOHM TYP., |
8.568 |
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MDmesh™ M6 | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 4.75V @ 250µA | 16.8nC @ 10V | ±25V | 650pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 650V 11A TO-220AB |
22.644 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 19.5nC @ 10V | ±25V | 718pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 200V 31A TO-220 |
15.888 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 31A (Tc) | 10V | 75mOhm @ 15.5A, 10V | 5V @ 250µA | 78nC @ 10V | ±30V | 3100pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 5.4A TO220FP |
8.304 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.4A (Tc) | 10V | 550mOhm @ 3.2A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 1370pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
MOSFET N-CH 600V 4.7A TO-220FP |
20.808 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 900mOhm @ 2.5A, 10V | 4V @ 250µA | 14nC @ 10V | ±25V | 363pF @ 50V | - | 20W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-5 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 200V 4.3A TO220FP |
19.800 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 4.3A (Tc) | 10V | 800mOhm @ 2.6A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 700pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
MOSFET N-CH 950V 4A IPAK |
6.048 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 950V | 4A (Tc) | 10V | 3.5Ohm @ 2A, 10V | 5V @ 100µA | 19nC @ 10V | ±30V | 460pF @ 25V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-262 |
23.136 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 38nC @ 10V | ±30V | 1018pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 8A TO220 |
23.628 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 1.05Ohm @ 4A, 10V | 4V @ 250µA | 41nC @ 10V | ±30V | 1921pF @ 25V | - | 40.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220 |
6.390 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 250mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | ±30V | 1300pF @ 300V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 800V 4.1A TO-262 |
20.364 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Rohm Semiconductor |
MOSFET N-CH 500V 21A TO220 |
11.508 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 210mOhm @ 10.5A, 10V | 4.5V @ 1mA | 64nC @ 10V | ±30V | 2300pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V TO220-3 |
14.496 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 199mOhm @ 10A, 10V | 3.5V @ 250µA | 74nC @ 10V | ±20V | 2950pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 500V 13A TO-220AB |
18.804 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 4V @ 250µA | 19.5nC @ 10V | ±25V | 710pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220 |
5.202 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | ±30V | 1300pF @ 300V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 18A TO-220FP |
16.344 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 18A (Tc) | 10V | 280mOhm @ 9A, 10V | 5V @ 250µA | 76nC @ 10V | ±30V | 1500pF @ 100V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 2.2A D2PAK |
9.984 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.2A (Tc) | 10V | 4.4Ohm @ 1.3A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 800V 12A TO220FP |
12.858 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 12A (Tc) | 10V | 445mOhm @ 6A, 10V | 5V @ 100µA | 22nC @ 10V | ±30V | 620pF @ 100V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |