Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 260/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 150V 13A TDSON-8 |
7.794 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 8V, 10V | 90mOhm @ 10A, 10V | 4V @ 20µA | 7nC @ 10V | ±20V | 510pF @ 75V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3 |
5.544 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6.4mOhm @ 50A, 10V | 2V @ 85µA | 68nC @ 10V | ±20V | 2530pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 55A DPAK |
8.424 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 19mOhm @ 33A, 10V | 1V @ 250µA | 50nC @ 4.5V | ±16V | 1600pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8 |
4.392 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 100A (Tc) | 4.5V, 10V | 2.5mOhm @ 30A, 10V | 2.2V @ 250µA | 74nC @ 10V | ±20V | 6100pF @ 15V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V 12.2A DPAK |
6.948 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 12.2A (Ta), 70A (Tc) | 5V, 10V | 10mOhm @ 30A, 10V | 3.5V @ 250µA | 45nC @ 10V | ±20V | 2500pF @ 32V | - | 3W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC |
2.790 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V | 11mOhm @ 7A, 4.5V | 3V @ 250µA | 31nC @ 5V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3 |
8.748 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 4.8mOhm @ 90A, 10V | 2.2V @ 58µA | 50nC @ 4.5V | ±20V | 8400pF @ 30V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 85A 6-PQFN |
4.806 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 85A (Tc) | 6V, 10V | 5.2mOhm @ 51A, 10V | 3.7V @ 100µA | 110nC @ 10V | ±20V | 3890pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 24A 8TDSON |
2.754 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 24A (Ta), 82A (Tc) | 4.5V, 10V | 2.6mOhm @ 30A, 10V | 2V @ 250µA | 16nC @ 10V | ±16V | 1100pF @ 12V | - | 2.5W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 200V 11.3A 8TSDSON |
6.588 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 11.3A (Tc) | 10V | 125mOhm @ 5.7A, 10V | 4V @ 25µA | 8.7nC @ 10V | ±20V | 680pF @ 100V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 116A D-PAK |
5.112 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta), 116A (Tc) | 4.5V, 10V | 5.1mOhm @ 35A, 10V | 2.5V @ 250µA | 72nC @ 10V | ±20V | 2990pF @ 15V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 90A TO252-3-11 |
7.758 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 90A (Tc) | 4.5V, 10V | 4.2mOhm @ 60A, 10V | 2V @ 40µA | 26nC @ 5V | ±20V | 3200pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON |
3.366 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 40A (Tc) | 4.5V, 10V | 2.1mOhm @ 20A, 10V | 2.2V @ 250µA | 41nC @ 10V | ±20V | 2600pF @ 15V | Schottky Diode (Body) | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 24A 8-SO |
3.690 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta) | 4.5V, 10V | 2.8mOhm @ 24A, 10V | 2.35V @ 100µA | 66nC @ 4.5V | ±20V | 5720pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 150V 13A DPAK |
5.994 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8 |
6.534 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta). 100A (Tc) | 4.5V, 10V | 2.5mOhm @ 30A, 10V | 2V @ 250µA | 98nC @ 10V | ±20V | 7600pF @ 15V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 20V 20A 8-SOIC |
7.668 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 20A (Ta) | 4.5V, 10V | 4.4mOhm @ 20A, 10V | 2.45V @ 250µA | 33nC @ 4.5V | ±20V | 2890pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 100V 14A D2PAK |
14.556 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 200mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 760pF @ 25V | - | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 28A 8TDSON |
3.508 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta), 100A (Tc) | 4.5V, 10V | 2mOhm @ 30A, 10V | 2.2V @ 250µA | 20nC @ 15V | ±20V | 2600pF @ 15V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 650V 6A TO252-3 |
4.122 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9nC @ 10V | ±20V | 363pF @ 400V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V 6A TO252-3 |
5.400 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 900mOhm @ 2.2A, 10V | 3.5V @ 110µA | 15nC @ 10V | ±20V | 350pF @ 500V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 29A D2PAK |
8.208 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 29A (Tc) | 10V | 40mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 30V 50A TO252-3 |
2.592 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 10.5mOhm @ 50A, 10V | 2V @ 85µA | 55nC @ 10V | +5V, -16V | 3770pF @ 25V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 100A 8TDSON-34 |
2.556 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 2.6mOhm @ 50A, 10V | 2V @ 30µA | 55nC @ 10V | ±16V | 2925pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO252 |
3.562 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12nC @ 10V | ±20V | 557pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO-252 |
4.140 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 4.1mOhm @ 50A, 10V | 2V @ 70µA | 40nC @ 5V | ±20V | 5200pF @ 15V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 14.5A TO263 |
19.212 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 14.5A (Tc) | 10V | 200mOhm @ 9A, 10V | 4V @ 1mA | - | ±20V | 1120pF @ 25V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 90A TO252-3-313 |
6.660 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 3.2mOhm @ 90A, 10V | 4V @ 53µA | 66.8nC @ 10V | ±20V | 5260pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 80A TDSON-8 |
8.478 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 19A (Ta), 80A (Tc) | 2.5V, 4.5V | 4.6mOhm @ 50A, 4.5V | 1.2V @ 110µA | 27.6nC @ 4.5V | ±12V | 4100pF @ 10V | - | 2.8W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 20A 8-SOIC |
7.596 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 20A (Tc) | 4.5V, 10V | 4.6mOhm @ 20A, 10V | 2.4V @ 100µA | 165nC @ 10V | ±20V | 5250pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |