Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 244/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 9.7A DPAK |
8.082 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 430mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | ±30V | 700pF @ 300V | Super Junction | 80W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET P-CH 100V 25A LPTS |
23.784 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 25A (Ta) | 4V, 10V | 63mOhm @ 25A, 10V | 2.5V @ 1mA | 60nC @ 5V | ±20V | 8000pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
TRENCH 8 80V NFET |
8.352 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 80V | 20A (Ta), 123A (Tc) | 10V | 3.7mOhm @ 20A, 10V | 4V @ 190µA | 46nC @ 10V | ±20V | 3100pF @ 40V | - | 3.8W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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STMicroelectronics |
MOSFET N-CH 80V 120A |
8.154 |
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STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 3.7mOhm @ 60A, 10V | 4.5V @ 250µA | 120nC @ 10V | ±20V | 8710pF @ 40V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 8A POWERFLAT |
7.272 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Tc) | 10V | 355mOhm @ 4A, 10V | 4V @ 250µA | 19nC @ 10V | ±25V | 704pF @ 100V | - | 52W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) HV | 8-PowerVDFN |
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Renesas Electronics America |
MOSFET N-CH 100V 25A LFPAK |
4.068 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 25A (Ta) | 8V, 10V | 15mOhm @ 12.5A, 10V | 6V @ 20mA | 61nC @ 10V | ±20V | 4350pF @ 10V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Rohm Semiconductor |
MOSFET N-CH 200V 30A LPTS |
23.784 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 30A (Tc) | 10V | 80mOhm @ 15A, 10V | 5V @ 1mA | 60nC @ 10V | ±30V | 3200pF @ 25V | - | 1.56W (Ta), 40W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 65A D2PAK |
20.916 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 65A (Ta) | 10V | 4.5mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | ±20V | 5400pF @ 50V | - | 156W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CHAN 80V POWERPAK 8X8L |
8.046 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 150A (Tc) | 10V | 3mOhm @ 20A, 10V | 3.5V @ 250µA | 144nC @ 10V | ±20V | 8625pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 60V 200A D2PAK |
12.996 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 200A (Ta), 170A (Tc) | 4.5V, 10V | 4mOhm @ 100A, 10V | 2.2V @ 250µA | 57nC @ 10V | ±20V | 5070pF @ 30V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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ON Semiconductor |
MOSFET N-CH 100V 17A 8PQFN |
8.532 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 6V, 10V | 4.2mOhm @ 44A, 10V | 4V @ 250µA | 65nC @ 10V | ±20V | 4500pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A 5DFN |
8.694 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 190mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | ±30V | 1800pF @ 300V | - | 156W (Tc) | 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Vishay Siliconix |
MOSFET P-CH 60V 18A D2PAK |
3.546 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 10V | 140mOhm @ 11A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 1100pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 20V 120A POWERFLAT56 |
4.338 |
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STripFET™ V | N-Channel | MOSFET (Metal Oxide) | 20V | 120A (Tc) | 2.5V, 4.5V | 3mOhm @ 14A, 4.5V | 700mV @ 250µA | 29nC @ 2.5V | ±8V | 4660pF @ 15V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 100V POWERFLAT5X6 |
6.192 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 10V | 24mOhm @ 10A, 10V | 4.5V @ 250µA | 19nC @ 10V | ±20V | 1270pF @ 50V | - | 5W (Ta), 70W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 60A SOP ADV |
8.460 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 6.5V, 10V | 2.3mOhm @ 30A, 10V | 4V @ 1mA | 72nC @ 10V | ±20V | 6100pF @ 30V | - | 1.6W (Ta), 78W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 80V 60A SOP ADV |
8.496 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 60A (Tc) | 10V | 4mOhm @ 30A, 10V | 4V @ 1mA | 59nC @ 10V | ±20V | 5300pF @ 40V | - | 1.6W (Ta), 78W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 60A SOP ADV |
7.578 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 10V | 4.5mOhm @ 30A, 10V | 4V @ 1mA | 58nC @ 10V | ±20V | 5200pF @ 50V | - | 1.6W (Ta), 78W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 55A LFPAK |
7.110 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 55A (Ta) | 4.5V, 10V | 3.3mOhm @ 27.5A, 10V | 2.5V @ 1mA | 33nC @ 4.5V | ±20V | 5180pF @ 10V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 75V 142A TO-220AB |
42.360 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 142A (Tc) | 10V | 7.5mOhm @ 85A, 10V | 4V @ 250µA | 320nC @ 10V | ±20V | 7750pF @ 25V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Sanken |
MOSFET N-CH 50V 75A TO-220F |
33.036 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 75A (Ta) | 10V | 10mOhm @ 37A, 10V | 4.5V @ 250µA | 70nC @ 10V | ±20V | 3200pF @ 10V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 60V 80A D2PAK |
16.812 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Ta), 80A (Tc) | 4.5V, 10V | 6mOhm @ 80A, 10V | 2.5V @ 250µA | 135nC @ 10V | ±20V | 6625pF @ 15V | - | 242W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 100V 93A TO263 |
8.730 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 93A (Tc) | 4.5V, 10V | 19mOhm @ 30A, 10V | 2.5V @ 250µA | 350nC @ 10V | ±20V | 14100pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 100A TO-263 |
8.280 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 2.5V @ 250µA | 185nC @ 10V | ±20V | 8050pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 40V 120A TO263 |
6.966 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 1.7mOhm @ 30A, 10V | 2.5V @ 250µA | 285nC @ 10V | ±20V | 14606pF @ 20V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 44A POWER56 |
4.806 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 44A (Ta), 124A (Tc) | 6V, 10V | 4.2mOhm @ 44A, 10V | 4V @ 250µA | 59nC @ 10V | ±20V | 4125pF @ 50V | - | 2.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
6.624 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 4.5V, 10V | 7.2mOhm @ 20A, 10V | 3V @ 250µA | 76nC @ 10V | ±20V | 2450pF @ 50V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO-262 |
8.184 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6860pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CHAN 600V PPAK SO-8L |
2.448 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 240mOhm @ 5.5A, 10V | 5V @ 250µA | 23nC @ 10V | ±30V | 783pF @ 100V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET N-CH 60V 145A 8PWRFLAT |
3.204 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 60V | 145A (Tc) | 10V | 2.5mOhm @ 16A, 10V | 4V @ 1mA | 40nC @ 10V | ±20V | 2700pF @ 25V | - | 4.8W (Ta), 125W (Tc) | 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |