Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 246/999
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 40V 20.7A |
7.308 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 20.7A (Tc) | 4.5V, 10V | 9mOhm @ 14A, 10V | 2.5V @ 250µA | 62nC @ 10V | ±20V | 2440pF @ 20V | - | 7.1W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 25V 40A POWER33 |
3.834 |
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PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 27A (Ta), 40A (Tc) | 4.5V, 10V | 2mOhm @ 27A, 10V | 3V @ 1mA | 68nC @ 10V | ±20V | 4410pF @ 13V | - | 2.3W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 80V 19A POWER56 |
8.730 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 19A (Ta), 80A (Tc) | 8V, 10V | 3.9mOhm @ 19A, 10V | 4.5V @ 250µA | 86nC @ 10V | ±20V | 7082pF @ 40V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 46A 8-SOP ADV |
19.842 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 40V | 46A (Ta) | 4.5V, 10V | 3.6mOhm @ 23A, 10V | 2.3V @ 1mA | 90nC @ 10V | ±20V | 7540pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET N-CH 600V 8A TO-220FM |
14.280 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Tc) | 10V | 800mOhm @ 4A, 10V | 4.5V @ 1mA | 21nC @ 10V | ±30V | 680pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 60V 100A LPTS |
20.268 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4V, 10V | 4.2mOhm @ 50A, 10V | 2.5V @ 1mA | 202nC @ 10V | ±20V | 11000pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A D2PAK |
5.940 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4V @ 250µA | 31nC @ 10V | ±20V | 660pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 90A D2PAK |
2.520 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 90A (Tc) | 7.5V, 10V | 17mOhm @ 30A, 10V | 4V @ 250µA | 96nC @ 10V | ±20V | 4132pF @ 100V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CH 500V 19A LPTS |
13.686 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 19A (Ta) | - | - | - | - | - | - | - | 100W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 525V 10A D2PAK |
4.932 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 525V | 10A (Tc) | 10V | 510mOhm @ 5A, 10V | 4.5V @ 50µA | 51nC @ 10V | ±30V | 1400pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 40V 80A D2PAK |
8.208 |
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Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 5V, 10V | 4mOhm @ 40A, 10V | 3V @ 250µA | 80nC @ 10V | ±20V | 4300pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 100V 120A I2PAK |
29.046 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 5mOhm @ 25A, 10V | 4V @ 1mA | 170nC @ 10V | ±20V | 9900pF @ 50V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET P-CH 40V 50A |
7.830 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 9.4mOhm @ 17A, 10V | 2.5V @ 250µA | 155nC @ 10V | ±20V | 6675pF @ 20V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N CH 60V 29A 8-PQFN |
8.910 |
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Dual Cool™, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 29A (Ta), 108A (Tc) | 8V, 10V | 2.3mOhm @ 29A, 10V | 4.5V @ 250µA | 107nC @ 10V | ±20V | 7680pF @ 30V | - | 3.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool™56 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N CH 650V 15A PWRFLT8X8HV |
3.096 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 210mOhm @ 8.5A, 10V | 5V @ 250µA | 36nC @ 10V | ±25V | 1345pF @ 100V | - | 2.8W (Ta), 110W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CHANNEL 30V 55A 8PQFN |
8.298 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 0.65mOhm @ 55A, 10V | 3V @ 750µA | 285nC @ 10V | ±20V | 22610pF @ 15V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 500V 8A D2PAK |
6.282 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 38nC @ 10V | ±30V | 1018pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N CH 100V 110A H2PAK |
7.542 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 110A (Tc) | 10V | 6.5mOhm @ 55A, 10V | 4.5V @ 250µA | 72nC @ 10V | ±20V | 5117pF @ 50V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 30V 90A D2PAK |
8.298 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 2.2mOhm @ 32A, 10V | 2.5V @ 250µA | 257nC @ 10V | ±20V | 12065pF @ 15V | - | 3.75W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 30V 15A 8-SOIC |
5.076 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta) | 2.5V, 10V | 4.5mOhm @ 22A, 10V | 1.5V @ 250µA | 50nC @ 4.5V | ±12V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET NCH 100V 74A D2PAK |
14.880 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 74A (Tc) | 10V | 12mOhm @ 74A, 10V | 4.5V @ 250µA | 86nC @ 10V | ±20V | 5605pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 120A TO263 |
8.982 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 6.7mOhm @ 30A, 10V | 2.5V @ 250µA | 270nC @ 10V | ±20V | 14280pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 650V 8.5A 8POWERFLAT |
4.644 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 8.5A (Tc) | 10V | 530mOhm @ 4.25A, 10V | 5V @ 250µA | 17nC @ 10V | ±25V | 644pF @ 100V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
8.208 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 1.9mOhm @ 20A, 10V | 2.5V @ 250µA | 135nC @ 10V | ±20V | 5800pF @ 15V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 75V 60A PPAK SO-8 |
5.922 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 60A (Tc) | 10V | 7mOhm @ 10A, 10V | 4.5V @ 250µA | 72nC @ 10V | ±20V | 2770pF @ 40V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 300V 35A TO263 |
2.610 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 300V | 35A (Tc) | 10V | 97mOhm @ 10A, 10V | 3.5V @ 250µA | 130nC @ 10V | ±20V | 5650pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 40V 50A 10-POLARPAK |
5.742 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 5.5mOhm @ 14A, 10V | 3V @ 250µA | 77nC @ 10V | ±20V | 3800pF @ 20V | - | 5.2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (S) | 10-PolarPAK® (S) |
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Vishay Siliconix |
MOSFET P-CH 100V 120A TO263 |
4.086 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 4.5V, 10V | 10.1mOhm @ 30A, 10V | 2.5V @ 250µA | 190nC @ 10V | ±20V | 9000pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
T8 40V LOW COSS |
2.952 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 35A (Ta), 210A (Tc) | 4.5V, 10V | 1.4mOhm @ 20A, 10V | 2V @ 250µA | 75nC @ 10V | ±20V | 4550pF @ 20V | - | 3.1W (Ta), 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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STMicroelectronics |
MOSFET N-CH 75V 120A D2PAK |
3.600 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 7.5mOhm @ 70A, 10V | 4V @ 250µA | 218nC @ 10V | ±20V | 5000pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |